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L6210

STMicroelectronics

L6210 by STMicroelectronics

L6210 by STMicroelectronics is a bridge rectifier diode featuring a max forward voltage of 1.2V and operates b/w 0 °C to 70°C. With 16 terminals in an in-line package, it’s ideal for power conversion applications. Its Schottky technology ensures efficient performance.

Median Price

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Lifecycle Status

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16

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1k+

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Vyrian

USA . 3,596 parts In-Stock

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Digiode

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Anansix

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Pegasus Components GmbH

Germany . 100 parts In-Stock

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Huijzer Components

Netherlands . 58 parts In-Stock

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Manoshevitz Elec. Sales

Israel . 44 parts In-Stock

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Classic Components Corporation

USA . 36 parts In-Stock

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Q Components

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ACDS - Activité Composants Distribution Service

France . 30 parts In-Stock

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Bristol Electronics

USA . 28 parts In-Stock

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ComSIT Distribution GmbH

Germany . 13 parts In-Stock

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LittleDiode

UK . 11 parts In-Stock

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Connector Distribution Corp

USA . 4 parts In-Stock

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Right Parts Inc.

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Fibra_Brandt Electronic GMBH

Germany . 1 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 1 parts In-Stock

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IDEA Electronic Components Group

UK . 2,074 parts In-Stock

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$0.088

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$0.079

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$0.088

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MKK Technologies

India . 949 parts In-Stock

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$0.166

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$0.166

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DigiPath Technology Company

USA . 949 parts In-Stock

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$0.166

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AZTECH Wire

Italy . 807 parts In-Stock

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$16.740

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Authorized Procurement Solutions

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QUARKTWIN TECHNOLOGY LTD

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Kepictronics

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A-Z Elektronik GmbH

Germany . 1,805 parts In-Stock

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Parana Technologies

USA . 1,606 parts In-Stock

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Alle Elektronik GmbH

Germany . 1,203 parts In-Stock

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Assy Fe

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Corphita

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Perfect Parts

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SIE Connect GmbH (Excess)

Germany . 52 parts In-Stock

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A-Plus Industry Inc.

USA . 34 parts In-Stock

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Cyclops Electronics Ltd (Excess)

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Overview

Unlock the potential of your designs with the L6210 by STMicroelectronics. This high-quality bridge rectifier diode ensures efficient performance in a variety of applications, from power supplies to motor drives. Its robust construction and advanced Schottky technology deliver exceptional reliability and low forward voltage drop, maximizing energy savings. Trust in STMicroelectronics’ proven expertise to enhance your projects with unparalleled value and efficiency!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This durable material ensures good insulation and heat resistance, making the diode reliable under various operating conditions.

Config: 2 BANKS, BRIDGE, 4 ELEMENTS

The bridge configuration allows for efficient rectification, suitable for converting AC to DC in various applications.

Package Shape: RECTANGULAR

The rectangular shape optimizes space utilization on PCBs, making it ideal for compact designs.

No. of Terminals: 16

A greater number of terminals provides flexibility and versatility in circuit design, accommodating various configurations.

Package Style (Meter): IN-LINE

The in-line package style facilitates easy mounting and integration into electronic circuits, saving assembly time.

Maximum Operating Temperature: 70 °C

This operational temperature limit ensures the diode can function reliably in moderately high-temperature environments.

Minimum Operating Temperature: 0 °C

Operating down to 0 °C makes this diode suitable for a wide range of applications, including those exposed to lower temperatures.

Terminal Finish: TIN LEAD

Tin-lead finish enhances solderability and improves the long-term reliability of the connections in electronic assemblies.

Terminal Position: DUAL

Dual terminal positioning allows for more flexible layout designs, which can simplify PCB routing.

Diode Type: BRIDGE RECTIFIER DIODE

As a bridge rectifier diode, it efficiently converts AC signals to DC, making it essential for power supply applications.

Maximum Forward Voltage (VF): 1.2 V

A lower forward voltage drop increases the efficiency of power conversion, improving overall system performance.

Technology: SCHOTTKY

Schottky technology allows for fast switching speeds and low forward voltage drops, enhancing performance in high-frequency applications.

Terminal Form: THROUGH-HOLE

Through-hole mounting provides excellent mechanical stability and is essential for high-current applications.

No. of Elements: 8

Having 8 elements ensures higher rectification capabilities, which enhances the performance in demanding applications.

Maximum Repetitive Peak Reverse Voltage: 50 V

With a peak reverse voltage of 50 V, this diode can handle higher voltages without breaking down, ideal for various circuit designs.

Diode Element Material: SILICON

Silicon as the material for diode elements ensures good electrical properties, contributing to the reliability and efficiency of the product.

Technical Specifications

Bridge Rectifier Diodes L6210 attributes and parameters. Explore more Bridge Rectifier Diodes devices from STMicroelectronics

Specs

Config:

2 BANKS, BRIDGE, 4 ELEMENTS

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

1.2 V

JESD-30 Code:

R-PDIP-T16

JESD-609 Code:

e0

No. of Elements:

8

No. of Phases:

1

No. of Terminals:

16

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

IN-LINE

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

50 V

Sub-Category:

Other Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

L6210 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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