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2N3418S

Vpt Components

2N3418S by Vpt Components

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 5 W; Maximum Collector Current (IC): 3 A; Maximum Turn Off Time (toff): 1300 ns;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 350 parts In-Stock

1+ parts

$1.043

100+ parts

$0.949

1k+ parts

$0.855

10k+ parts

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350

$1.043

$0.949

$0.855

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Microchip USA

USA . 3,037 parts In-Stock

1+ parts

$49.678

100+ parts

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3,037

$49.678

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Component Stockers USA

USA . 260 parts In-Stock

1+ parts

$318.850

100+ parts

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10k+ parts

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260

$318.850

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QualityLine Systems

Poland . 3,570 parts In-Stock

1+ parts

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3,570

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XL Components Corporation

Australia . 2,483 parts In-Stock

1+ parts

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100+ parts

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2,483

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Marpe Global Electronics

Taiwan . 2,008 parts In-Stock

1+ parts

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2,008

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Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N3418S attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Vpt Components

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

3 A

Maximum Collector-Base Capacitance:

150 pF

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

10

Maximum Fall Time (tf):

200 ns

JEDEC-95 Code:

TO-205AD

JESD-30 Code:

O-MBCY-W3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

1 W

Maximum Power Dissipation (Abs):

5 W

Maximum Rise Time (tr):

220 ns

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

1300 ns

Maximum Turn On Time (ton):

300 ns

Maximum VCEsat:

.5 V

Trade Compliance

2N3418S Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Vpt Components

VPT Components was formed as a collaboration between VPT Inc., a global leader in power conversion solutions, and SST Components, Inc., a MIL-PRF-19500 JANS certified semiconductor manufacturer. VPT Components is now one of the largest providers of JAN certified semiconductors along with a full-service facility for the independent, unbiased testing and custom assembly of electronic components. VPT Components acquired the assets of MACOM’s Hi-Rel Components business (formerly Aeroflex Metelics) located in Lawrence, MA in September 2018 and we are committed to supporting the former MACOM slash sheet qualifications as previously listed on the QML. This acquisition provides us with an additional 40,000 square feet of state of the art manufacturing and test capability of high reliability discrete semiconductors as we grow our product portfolio. We are also maintaining our Billerica, MA operations with 10,000 total square feet and 4,500 square feet of class 10,000 cleanroom for discrete/hybrid assembly. Our Billerica operation includes the addition of $5M in new test, assembly, and screening equipment that enables us to assemble a wide variety of hermetically sealed components to the highest quality levels. VPT Components keeps pace with advancing technology by continually adding new and increasingly sophisticated automatic test and assembly capabilities. Our expanding product portfolio includes MIL-PRF-19500 qualified Rad Hard NPN and PNP small signal and power switching transistors, SCRs, and MOSFETs along with an extensive offering of Zeners, rectifiers, switching diodes and Schottky products including JANHC and JANKC qualified die. Custom products and packaging services are also available.

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