Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Body Material: PLASTIC/EPOXY; Avalanche Energy Rating (EAS): 117 mJ;
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Power Field Effect Transistors (FET) SIHP12N60E-E3 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Vishay Siliconix
Additional Features:
Avalanche Energy Rating (EAS):
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JEDEC-95 Code:
JESD-30 Code:
No. of Elements:
No. of Terminals:
Operating Mode:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Maximum Pulsed Drain Current (IDM):
Surface Mount:
Terminal Form:
Terminal Position:
Transistor Application:
Transistor Element Material:
SIHP12N60E-E3 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Vishay, through its Siliconix subsidiary, leads the industry in the development of power semiconductor products that improve the efficiency of power management circuitry in end products while reducing space requirements. As the world's number-one brand of low-voltage power MOSFETs (metal-oxide semiconductor field-effect transistors), Vishay Siliconix products play a key role in making handheld and portable electronic systems operate more efficiently from smaller and lighter battery packs. Higher-voltage Vishay Siliconix power MOSFETs are used for applications from electric motor control in industrial systems to converting power in the switches and routers that enable the world's communications networks. Vishay Siliconix power ICs address markets ranging from mobile communications and computing to the fixed telecom infrastructure and include switchmode regulators, linear regulators, and power management devices. A number of devices, built on specialized process flows, are purpose-made for the medical, automotive, and military markets. Vishay Siliconix milestones include the first analog switch, the first analog multiplexer, the first small-outline power MOSFET (LITTLE FOOT®), and the first power MOSFETs built on Trench technology (TrenchFET®). This tradition of innovation continues with new silicon technologies designed to maximize power MOSFET performance. In dc-to-dc conversion and load switching, Vishay Siliconix leads the market with high-density TrenchFET silicon processes and innovative package options for better thermal performance (PowerPAK®, PolarPAK®), smaller footprints (ChipFET®, MICRO FOOT®, PowerPAK SC-70, PowerPAK SC-75), and integration of multiple devices (PowerPAIR®). Vishay Siliconix power ICs focus on delivering the optimal and appropriate level of integration for power management and conversion. Recent innovations include the industry’s most powerful DrMOS solution for managing the core voltage in PCs, servers, and other CPU-based systems, and the new microBUCK™ dc-to-dc converter family, which combines the controller IC, MOSFETs, and bootstrap switch for a buck regulator in a tiny 4-mm2 package. The Vishay Siliconix product portfolio now also features high-voltage planar MOSFETs acquired from International Rectifier. Siliconix was founded in 1962. In 1998, Vishay acquired the Semiconductor Business Group of TEMIC, which included 80% of Siliconix. Vishay purchased the remaining 20% of Siliconix shares in 2005.
1N4148
Itt Components
RECTIFIER DIODE; Surface Mount: NO; Config: SINGLE; Maximum Operating Temperature: 200 Cel; Maximum Repetitive Peak Reverse Voltage: 100 V; Maximum Output Current: .15 A;
SMBJ18CA
STMicroelectronics
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SN6505BDBVR
Texas Instruments
SN6505BDBVR by Texas Instruments is a small outline, low profile interface IC with 6 terminals. It operates b/w -55 to 125°C and supports a max output current of 1.5A at supply voltages ranging from 2.25V to 5.5V. Ideal for military-grade applications requiring compact design and high reliability.
BAV99
Continental Device India
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148WS
Yangzhou Yangjie Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
M85049/85-08W02
TE Connectivity
CONNECTOR ACCESSORY; Minimum Operating Temperature: -65 Cel; Wire Gauge (AWG): 0; Maximum Wire Size: 0 AWG; Maximum Operating Temperature: 175 Cel; Material: ALUMINUM ALLOY;
Won-top Electronics
SS495A-SP
Honeywell Sensing And Control
SS495A-SP by Honeywell is a magnetic field sensor with 10.5V max supply voltage, 3" body width, and 1.5% linearity. Ideal for applications requiring a Hall effect sensor with -40 to 150°C operating temperature range, such as position sensing in automotive or industrial systems.
LM358DT
LM358DT by STMicroelectronics is a dual operational amplifier with a max input offset voltage of 9000 uV. It operates at a nominal voltage of 5V and has a min voltage gain of 25000. This amplifier is commonly used in applications requiring high precision and low power consumption.
M39029/58-360
Glenair
CONNECTOR ACCESSORY; Contact Gender: MALE; Material: COPPER ALLOY; IEC Conformity: NO; MIL-Connector Accessory Name: CONTACT; MIL Conformity: YES;
C1005X7R1E103K050BB
TDK
The TDK C1005X7R1E103K050BB is a ceramic capacitor with capacitance of 0.01uF and rated DC voltage of 25V. It features X7R temperature characteristics, -55 to 125°C operating range, and ±10% tolerance. Ideal for surface mount applications requiring compact size and stable performance in various electronic circuits.
Kingwell Technonlogy
MBR0540T1G
Onsemi
MBR0540T1G by Onsemi is a Schottky rectifier diode with max. forward voltage of 0.62V and max. output current of 0.5A, ideal for applications requiring high efficiency power conversion in small outline packages. Operating temp range: -55 to 150°C, with peak reflow temp at 260°C, making it suitable for various electronic devices needing reliable rectification performance in compact designs.
Changzhou Galaxy Century Microelectronics
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: J BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N7002
Supertex
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; No. of Elements: 1; Maximum Feedback Capacitance (Crss): 5 pF;
2N2222A
National Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .5 A;
Micro Commercial Components
Jiangsu Jiejie Microelectronics
Rochester Electronics
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .6 A;
BSC067N06LS3GATMA1
Infineon Technologies
BSC067N06LS3GATMA1 by Infineon is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 200A IDM, 47mJ EAS, and 0.0067 ohm RDS(ON). Operating in ENHANCEMENT MODE, it has a max temp of 150°C and SILICON element material.
IRF7303TRPBF
IRF7303TRPBF by Infineon is a N-CHANNEL FET with 2 elements and built-in diode, ideal for SWITCHING applications. It has a Max Drain Current of 4.9A, Min DS Breakdown Voltage of 30V, and Max Pulsed Drain Current of 20A. This small outline package with GULL WING terminals operates in ENHANCEMENT MODE for efficient power management.
IRLML6402TR
International Rectifier
IRLML6402TR by International Rectifier is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features 22A IDM and 0.065 ohm RDS(ON), operating in ENHANCEMENT MODE at up to 150°C. This surface-mount transistor has a built-in diode, making it suitable for various power management tasks.
NDT452AP
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Terminal Finish: MATTE TIN; Moisture Sensitivity Level (MSL): 1;
IRF3205PBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Case Connection: DRAIN; No. of Elements: 1;
IRLML5203TRPBF
Infineon's IRLML5203TRPBF is a P-CHANNEL FET for SWITCHING applications. Features include 30V DS Breakdown Voltage, 24A IDM, and 0.098 ohm RDS(on). With a small outline package style and -55 to 150 °C operating range, it's ideal for power management in various electronic devices.
IRF840SPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier; No. of Elements: 1;
CSD19536KTT
CSD19536KTT by Texas Instruments is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 400A and EAS of 806mJ, operating in ENHANCEMENT MODE. This PLASTIC/EPOXY transistor has a max ID of 200A and 0.0028 ohm RDS(on), suitable for high-power switching circuits.
NTD3055-094T4G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Maximum Time At Peak Reflow Temperature (s): 30; Transistor Application: SWITCHING;
IRFP460APBF
Vishay Intertechnology
Vishay Intertechnology's IRFP460APBF is a N-CHANNEL Power FET with 500V DS Breakdown Voltage and 80A IDM. Ideal for SWITCHING applications, it features a max power dissipation of 280W and operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150°C.
IRFL9014TRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.1 W; Package Shape: RECTANGULAR; Operating Mode: ENHANCEMENT MODE;
SUM110P06-07L-E3
SUM110P06-07L-E3 by Vishay Intertechnology is a P-channel power FET with a min DS breakdown voltage of 60V. It has a max pulsed drain current of 240A and an avalanche energy rating of 281mJ. This transistor is commonly used for switching applications in electronic circuits.
SQJ469EP-T1_GE3
Vishay Intertechnology's SQJ469EP-T1_GE3 is a P-CHANNEL FET with 80V DS Breakdown Voltage, 128A IDM, and 0.025 ohm RDS(ON). Ideal for power applications requiring high drain current capability in compact designs. Operating in enhancement mode, it offers efficient performance up to 175°C.
SI7469ADP-T1-RE3
Vishay Intertechnology's SI7469ADP-T1-RE3 is a P-channel FET with 80V DS breakdown voltage and 125A IDM. Ideal for switching applications, it features a built-in diode, 0.027 ohm RDS(on), and operates in enhancement mode. Suitable for surface mount with 5 terminals, this MOSFET has a max power dissipation of 73.5W and can withstand temperatures from -55 to 150°C.
STS4DNF60L
STS4DNF60L by STMicroelectronics is a N-CHANNEL FET with 60V DS Breakdown Voltage, 16A IDM, and 0.065 ohm RDS(on). Ideal for SWITCHING applications, it features ENHANCEMENT MODE operation in a SMALL OUTLINE package. Operating at up to 150°C, it offers high power dissipation and avalanche energy rating.
FDMS86350ET80
The Onsemi FDMS86350ET80 is a N-CHANNEL Power FET with 80V DS Breakdown Voltage and 693A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.0024 ohm RDS(on), and operates in ENHANCEMENT MODE.
IRFP460LCPBF
Vishay Siliconix
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Application: SWITCHING; Maximum Operating Temperature: 150 Cel; Maximum Drain-Source On Resistance: .27 ohm;
BSC028N06NSTATMA1
BSC028N06NSTATMA1 by Infineon is a N-CHANNEL FET with 60V DS breakdown voltage, 0.0028 ohm max RDS(on), and 400A IDM. It's used for switching applications due to its built-in diode, small outline package style, and high pulsed drain current capacity.
IRFHS9301TRPBF
Infineon's IRFHS9301TRPBF is a P-CHANNEL FET with 30V DS Breakdown Voltage, 6A ID, and 0.037 ohm RDS(on). Ideal for SWITCHING applications, it features ENHANCEMENT MODE operation in a SMALL OUTLINE package with DUAL terminals.
NDT452AP by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage and 5A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating from -65 to 150 °C, it has 0.065 ohm On Resistance and can handle up to 15A Pulsed Drain Current.
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SIHP12N60E-E3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 147 W; Package Body Material: PLASTIC/EPOXY; No. of Elements: 1;
SIHP22N60E-E3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 227 W; Avalanche Energy Rating (EAS): 367 mJ; Minimum DS Breakdown Voltage: 600 V;
SIHP22N60E-GE3
SIHP22N60E-GE3 by Vishay Intertechnology is a power FET with N-channel configuration and 600V DS breakdown voltage. It is used for switching applications, offering a max pulsed drain current of 56A and an avalanche energy rating of 367mJ.
SIHP25N50E-BE3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Minimum DS Breakdown Voltage: 500 V; Maximum Feedback Capacitance (Crss): 8 pF;
SIHP052N60EF-GE3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 278 W; Terminal Position: SINGLE; Transistor Element Material: SILICON;
SIHP17N80E-GE3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 208 W; No. of Elements: 1; Operating Mode: ENHANCEMENT MODE;
SIHP15N60E-E3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Application: SWITCHING; JEDEC-95 Code: TO-220AB; Maximum Drain Current (ID): 15 A;
SIHP17N60D-E3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 277.8 W; JEDEC-95 Code: TO-220AB; Package Style (Meter): FLANGE MOUNT;
SIHP12N60E-GE3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 147 W; Terminal Position: SINGLE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
SIHP17N60D-GE3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 277.8 W; Package Shape: RECTANGULAR; Maximum Drain Current (Abs) (ID): 17 A;
SIHP12N65E-GE3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Transistor Application: SWITCHING; Maximum Drain Current (ID): 12 A;
SIHP12N50C
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Qualification: Not Qualified; JEDEC-95 Code: TO-220AB; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
SIHP12N50C-E3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 208 W; Terminal Position: SINGLE; Transistor Element Material: SILICON;
SIHP12N50E-GE3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 114 W; Package Body Material: PLASTIC/EPOXY; Minimum DS Breakdown Voltage: 500 V;
SIHP100N60E-GE3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 208 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; No. of Elements: 1;
SIHP120N60E-GE3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 179 W; Maximum Drain Current (ID): 25 A; Terminal Form: THROUGH-HOLE;
SIHP105N60EF-GE3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 208 W; Minimum DS Breakdown Voltage: 600 V; Package Style (Meter): FLANGE MOUNT;
SIHP11N80E-BE3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 179 W; Package Body Material: PLASTIC/EPOXY; Package Style (Meter): FLANGE MOUNT;
SIHP17N80E-BE3
SIHP17N80E-BE3 by Vishay Intertechnology is a N-CHANNEL FET with 800V DS Breakdown Voltage, ideal for SWITCHING applications. It features 45A Max Pulsed Drain Current and 353mJ Avalanche Energy Rating. Operating in ENHANCEMENT MODE, it has a max power dissipation of 208W and can withstand temperatures up to 150°C.
SIHP12N50E-BE3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 114 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Position: SINGLE;
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