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SIHP17N80E-BE3

Vishay Intertechnology

SIHP17N80E-BE3 by Vishay Intertechnology

SIHP17N80E-BE3 by Vishay Intertechnology is a N-CHANNEL FET with 800V DS Breakdown Voltage, ideal for SWITCHING applications. It features 45A Max Pulsed Drain Current and 353mJ Avalanche Energy Rating. Operating in ENHANCEMENT MODE, it has a max power dissipation of 208W and can withstand temperatures up to 150°C.

Median Price

$4.225

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 3,906 parts In-Stock

1+ parts

$6.130

100+ parts

$2.700

1k+ parts

$2.490

10k+ parts

-

3,906

$6.130

$2.700

$2.490

-

TTI

USA . 2,600 parts In-Stock

1+ parts

-

100+ parts

$2.320

1k+ parts

$2.290

10k+ parts

$2.160

2,600

-

$2.320

$2.290

$2.160

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 89,858 parts In-Stock

1+ parts

$2.940

100+ parts

-

1k+ parts

-

10k+ parts

-

89,858

$2.940

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip USA

USA . 4,454 parts In-Stock

1+ parts

$31.460

100+ parts

-

1k+ parts

-

10k+ parts

-

4,454

$31.460

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 5,185 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,185

-

-

-

-

Overview

Unleash the power of Vishay Intertechnology's SIHP17N80E-BE3 Power Field Effect Transistor (FET) for all your switching needs! With a high minimum DS breakdown voltage of 800V and a maximum pulsed drain current of 45A, this N-CHANNEL transistor offers unparalleled performance and reliability. Perfect for a wide range of applications, this enhancement mode transistor with a built-in diode provides maximum power dissipation of 208W and an avalanche energy rating of 353mJ. Trust in Vishay Intertechnology's expertise and quality to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the transistor.

Minimum DS Breakdown Voltage: 800 V

Offers high voltage capability, making it suitable for applications where high voltage is required.

Maximum Pulsed Drain Current (IDM): 45 A

Can handle high levels of current during peak operations, making it reliable for demanding tasks.

Maximum Power Dissipation (Abs): 208 W

Can dissipate heat efficiently, reducing the risk of overheating and ensuring stable performance.

Maximum Operating Temperature: 150 °C

Can operate in high temperature environments without performance degradation, increasing its versatility.

Maximum Turn Off Time (toff): 194 ns

Has a fast turn off time, enabling quick switching transitions and improving overall efficiency.

Maximum Drain-Source On Resistance: 0.29 ohm

Low on-resistance leads to minimal power loss and heat generation, enhancing energy efficiency.

Technical Specifications

Power Field Effect Transistors (FET) SIHP17N80E-BE3 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Avalanche Energy Rating (EAS):

353 mJ

Minimum DS Breakdown Voltage:

800 V

Maximum Drain Current (ID):

15 A

Maximum Drain-Source On Resistance:

.29 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

9 pF

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

45 A

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

194 ns

Maximum Turn On Time (ton):

92 ns

Trade Compliance

SIHP17N80E-BE3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

Category top products 20

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