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SUD50N04-8M8P-4GE3

Vishay Intertechnology

SUD50N04-8M8P-4GE3 by Vishay Intertechnology

Vishay Intertechnology's SUD50N04-8M8P-4GE3 is a N-channel power FET with 40V DS breakdown voltage and 100A IDM. Ideal for switching applications, it features a single configuration with built-in diode and 0.0088 ohm max drain-source resistance.

Median Price

$0.724

Lifecycle Status

Suppliers In-Stock

26

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 50,761 parts In-Stock

1+ parts

$0.288

100+ parts

$0.288

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$0.288

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-

50,761

$0.288

$0.288

$0.288

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Chip1Stop

Japan . 1,645 parts In-Stock

1+ parts

$0.639

100+ parts

$0.501

1k+ parts

$0.368

10k+ parts

-

1,645

$0.639

$0.501

$0.368

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Arrow

USA . 76 parts In-Stock

1+ parts

$0.764

100+ parts

$0.466

1k+ parts

-

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76

$0.764

$0.466

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Farnell

UK . 49,355 parts In-Stock

1+ parts

$0.975

100+ parts

$0.511

1k+ parts

$0.475

10k+ parts

$0.466

49,355

$0.975

$0.511

$0.475

$0.466

Element14

Singapore . 53,401 parts In-Stock

1+ parts

$1.850

100+ parts

$1.180

1k+ parts

$0.893

10k+ parts

$0.858

53,401

$1.850

$1.180

$0.893

$0.858

DigiKey

USA . 7,738 parts In-Stock

1+ parts

$2.360

100+ parts

$1.025

1k+ parts

$0.751

10k+ parts

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7,738

$2.360

$1.025

$0.751

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Mouser Electronics

USA . 5,739 parts In-Stock

1+ parts

$2.360

100+ parts

$1.030

1k+ parts

$0.752

10k+ parts

$0.696

5,739

$2.360

$1.030

$0.752

$0.696

TTI Europe

Germany . 20,000 parts In-Stock

1+ parts

-

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$0.307

20,000

-

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$0.307

Avnet

USA . 12,500 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

$0.581

12,500

-

-

-

$0.581

Future Electronics

Canada . 7,500 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

$0.685

7,500

-

-

-

$0.685

TTI

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

$0.353

5,000

-

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$0.353

Verical

USA . 2,500 parts In-Stock

1+ parts

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$0.913

2,500

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$0.913

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 300 parts In-Stock

1+ parts

$0.751

100+ parts

-

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300

$0.751

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Maritex

Poland . 17,448 parts In-Stock

1+ parts

$0.928

100+ parts

$0.674

1k+ parts

$0.567

10k+ parts

$0.516

17,448

$0.928

$0.674

$0.567

$0.516

TME

Poland . 1,559 parts In-Stock

1+ parts

$1.970

100+ parts

$0.798

1k+ parts

$0.523

10k+ parts

$0.446

1,559

$1.970

$0.798

$0.523

$0.446

IBS Electronics

USA . 50,000 parts In-Stock

1+ parts

-

100+ parts

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$1.122

50,000

-

-

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$1.122

NAC Semi

USA . 20,000 parts In-Stock

1+ parts

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$0.720

20,000

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$0.720

Vyrian

USA . 13,061 parts In-Stock

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13,061

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Cyclops Electronics Ltd

UK . 7,500 parts In-Stock

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7,500

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Chip Stock

USA . 3,800 parts In-Stock

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3,800

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Rutronik

Germany . 2,500 parts In-Stock

1+ parts

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$0.310

2,500

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$0.310

ComSIT Distribution GmbH

Germany . 885 parts In-Stock

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885

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Bristol Electronics

USA . 710 parts In-Stock

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710

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Fibra_Brandt Electronic GMBH

Germany . 100 parts In-Stock

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100

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Prism Electronics

USA . 8 parts In-Stock

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8

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Electronic Treasures

USA . 8 parts In-Stock

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8

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Distributors (Availability)

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Ampacity Inc.

Singapore . 18,061 parts In-Stock

1+ parts

$0.261

100+ parts

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18,061

$0.261

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Semicontronic

India . 13,294 parts In-Stock

1+ parts

$0.570

100+ parts

$0.556

1k+ parts

$0.553

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13,294

$0.570

$0.556

$0.553

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Aztec Data Supply Inc.

USA . 2,538 parts In-Stock

1+ parts

$0.720

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2,538

$0.720

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Argo Parts USA

USA . 2,181 parts In-Stock

1+ parts

$0.751

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2,181

$0.751

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Netroflash

USA . 500 parts In-Stock

1+ parts

$0.751

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500

$0.751

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Advanced Electronics

New Zealand . 100 parts In-Stock

1+ parts

$0.904

100+ parts

$0.859

1k+ parts

$0.859

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100

$0.904

$0.859

$0.859

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Corohmni

South Africa . 24 parts In-Stock

1+ parts

$0.915

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24

$0.915

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Modulus Dynamics

Lithuania . 12,020 parts In-Stock

1+ parts

$1.469

100+ parts

$1.469

1k+ parts

$1.469

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12,020

$1.469

$1.469

$1.469

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Continental Prestige Electronics

USA . 57,143 parts In-Stock

1+ parts

$1.670

100+ parts

$1.030

1k+ parts

$0.671

10k+ parts

$0.601

57,143

$1.670

$1.030

$0.671

$0.601

Microchip USA

USA . 9,483 parts In-Stock

1+ parts

$3.548

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9,483

$3.548

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Perfect Parts

USA . 326,610 parts In-Stock

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326,610

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Kepictronics

USA . 15,000 parts In-Stock

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GreenTree Electronics

Israel . 5,000 parts In-Stock

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5,000

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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2,500

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Speed Components Ltd (Excess)

Israel . 25 parts In-Stock

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25

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Overview

Unleash the power of innovation with the SUD50N04-8M8P-4GE3 by Vishay Intertechnology. This high-quality Power FET is designed for switching applications, offering customers unbeatable performance and reliability. With a maximum drain current of 50A and a low on-resistance, this N-Channel transistor delivers exceptional efficiency for your electronic projects. Trust Vishay Intertechnology for cutting-edge technology that exceeds expectations. Upgrade your designs today with the SUD50N04-8M8P-4GE3.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides durability and protection to the internal components of the FET, ensuring a longer lifespan.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have higher electron mobility and lower ON resistance compared to P-channel FETs, making them more efficient for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for reverse voltage protection and efficient switching operations, making it suitable for a wide range of applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET offers fast switching speeds and low ON resistance, making it ideal for power management in various electronic devices.

Maximum Pulsed Drain Current (IDM): 100 A

The high maximum pulsed drain current rating of 100A allows for handling of large currents during peak load conditions, ensuring reliable performance under heavy loads.

Technical Specifications

Power Field Effect Transistors (FET) SUD50N04-8M8P-4GE3 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Avalanche Energy Rating (EAS):

45 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

40 V

Maximum Drain Current (Abs) (ID):

50 A

Maximum Drain Current (ID):

14 A

Maximum Drain-Source On Resistance:

.0088 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

100 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SUD50N04-8M8P-4GE3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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