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SQM40010EL_GE3

Vishay Intertechnology

SQM40010EL_GE3 by Vishay Intertechnology

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: SINGLE; JEDEC-95 Code: TO-263AB; Maximum Pulsed Drain Current (IDM): 300 A;

Median Price

$3.443

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 1,239 parts In-Stock

1+ parts

$3.310

100+ parts

$1.802

1k+ parts

$1.420

10k+ parts

-

1,239

$3.310

$1.802

$1.420

-

Arrow

USA . 1,220 parts In-Stock

1+ parts

$3.443

100+ parts

$1.721

1k+ parts

$1.520

10k+ parts

-

1,220

$3.443

$1.721

$1.520

-

Mouser Electronics

USA . 1,701 parts In-Stock

1+ parts

$3.510

100+ parts

$1.800

1k+ parts

$1.540

10k+ parts

-

1,701

$3.510

$1.800

$1.540

-

Newark

USA . 606 parts In-Stock

1+ parts

$3.540

100+ parts

$1.920

1k+ parts

-

10k+ parts

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606

$3.540

$1.920

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-

DigiKey

USA . 757 parts In-Stock

1+ parts

$3.910

100+ parts

$1.799

1k+ parts

-

10k+ parts

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757

$3.910

$1.799

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Element14

Singapore . 76 parts In-Stock

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$4.000

100+ parts

$2.570

1k+ parts

$2.060

10k+ parts

-

76

$4.000

$2.570

$2.060

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TTI

USA . 2,400 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$1.540

10k+ parts

-

2,400

-

-

$1.540

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Verical

USA . 1,220 parts In-Stock

1+ parts

-

100+ parts

$1.721

1k+ parts

$1.520

10k+ parts

-

1,220

-

$1.721

$1.520

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Farnell

UK . 596 parts In-Stock

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-

100+ parts

$1.450

1k+ parts

$1.230

10k+ parts

-

596

-

$1.450

$1.230

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Distributors (In-Stock)

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Vyrian

USA . 64,032 parts In-Stock

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$1.520

100+ parts

-

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10k+ parts

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64,032

$1.520

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Rebound Electronics

UK . 67 parts In-Stock

1+ parts

-

100+ parts

-

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10k+ parts

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67

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Distributors (Availability)

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Microchip USA

USA . 7,931 parts In-Stock

1+ parts

$11.889

100+ parts

-

1k+ parts

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10k+ parts

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7,931

$11.889

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-

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Technical Specifications

Power Field Effect Transistors (FET) SQM40010EL_GE3 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Avalanche Energy Rating (EAS):

320 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

40 V

Maximum Drain Current (ID):

120 A

Maximum Drain-Source On Resistance:

.0016 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

1900 pF

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

300 A

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

115 ns

Maximum Turn On Time (ton):

55 ns

Trade Compliance

SQM40010EL_GE3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

Category top products 20

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