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SISS40DN-T1-GE3

Vishay Intertechnology

SISS40DN-T1-GE3 by Vishay Intertechnology

Vishay Intertechnology's SISS40DN-T1-GE3 is an N-channel power FET with a 100V DS breakdown voltage and 60A max pulsed drain current. Ideal for switching applications, it operates in enhancement mode with a 0.021 ohm max drain-source resistance. The transistor has a small outline package style and can withstand temperatures from -55 to 150°C.

Median Price

$0.541

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 960 parts In-Stock

1+ parts

$0.405

100+ parts

$0.373

1k+ parts

$0.358

10k+ parts

$0.351

960

$0.405

$0.373

$0.358

$0.351

Arrow

USA . 1,870 parts In-Stock

1+ parts

$0.541

100+ parts

$0.516

1k+ parts

$0.491

10k+ parts

-

1,870

$0.541

$0.516

$0.491

-

DigiKey

USA . 1,780 parts In-Stock

1+ parts

$1.910

100+ parts

$0.817

1k+ parts

$0.590

10k+ parts

-

1,780

$1.910

$0.817

$0.590

-

Newark

USA . 2,069 parts In-Stock

1+ parts

$2.280

100+ parts

$1.050

1k+ parts

$0.888

10k+ parts

-

2,069

$2.280

$1.050

$0.888

-

Chip1Stop

Japan . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.440

3,000

-

-

-

$0.440

Element14

Singapore . 2,290 parts In-Stock

1+ parts

-

100+ parts

$1.080

1k+ parts

$0.752

10k+ parts

$0.695

2,290

-

$1.080

$0.752

$0.695

Verical

USA . 1,870 parts In-Stock

1+ parts

-

100+ parts

$0.516

1k+ parts

$0.491

10k+ parts

-

1,870

-

$0.516

$0.491

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 29 parts In-Stock

1+ parts

$0.826

100+ parts

-

1k+ parts

-

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29

$0.826

-

-

-

IBS Electronics

USA . 9,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$1.431

9,000

-

-

-

$1.431

NAC Semi

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.677

6,000

-

-

-

$0.677

Vyrian

USA . 3,086 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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3,086

-

-

-

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Rutronik

Germany . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.450

3,000

-

-

-

$0.450

Chip Stock

USA . 710 parts In-Stock

1+ parts

-

100+ parts

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710

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ComSIT Distribution GmbH

Germany . 87 parts In-Stock

1+ parts

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100+ parts

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87

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ComSIT USA

USA . 87 parts In-Stock

1+ parts

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87

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 3,222 parts In-Stock

1+ parts

$0.344

100+ parts

$0.335

1k+ parts

$0.334

10k+ parts

-

3,222

$0.344

$0.335

$0.334

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Ampacity Inc.

Singapore . 2,975 parts In-Stock

1+ parts

$0.344

100+ parts

-

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10k+ parts

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2,975

$0.344

-

-

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Corohmni

South Africa . 198 parts In-Stock

1+ parts

$0.818

100+ parts

-

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-

10k+ parts

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198

$0.818

-

-

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Continental Prestige Electronics

USA . 4,377 parts In-Stock

1+ parts

$0.826

100+ parts

-

1k+ parts

-

10k+ parts

$0.809

4,377

$0.826

-

-

$0.809

Argo Parts USA

USA . 1,074 parts In-Stock

1+ parts

$0.826

100+ parts

-

1k+ parts

-

10k+ parts

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1,074

$0.826

-

-

-

Advanced Electronics

New Zealand . 550 parts In-Stock

1+ parts

$0.843

100+ parts

$0.800

1k+ parts

$0.800

10k+ parts

-

550

$0.843

$0.800

$0.800

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Aztec Data Supply Inc.

USA . 4,399 parts In-Stock

1+ parts

$1.850

100+ parts

-

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-

10k+ parts

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4,399

$1.850

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Microchip USA

USA . 4,142 parts In-Stock

1+ parts

$3.440

100+ parts

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4,142

$3.440

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Perfect Parts

USA . 110 parts In-Stock

1+ parts

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110

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Kepictronics

USA . 100 parts In-Stock

1+ parts

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100

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Overview

Revolutionize your power management with the Vishay Intertechnology SISS40DN-T1-GE3 Power Field Effect Transistor. Designed for switching applications, this N-channel transistor offers unparalleled performance and reliability. With a maximum pulsed drain current of 60A and a minimum DS breakdown voltage of 100V, this transistor is ideal for high-power circuits. Its small outline package and surface mount capabilities make it easy to integrate into your designs. Trust Vishay Intertechnology for quality components that deliver exceptional value and efficiency. Upgrade your electronics with the SISS40DN-T1-GE3 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the FET, ensuring longevity and reliability.

Polarity or Channel Type: N-CHANNEL

Suitable for various applications where an N-channel FET is preferred for efficient power conversion.

Minimum DS Breakdown Voltage: 100 V

Allows for safe operation in applications where higher voltage levels are required.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs offer easier control over the switching operation, making them versatile for different circuit designs.

Maximum Pulsed Drain Current (IDM): 60 A

Capable of handling high current loads during pulse operation, suitable for demanding applications.

Avalanche Energy Rating (EAS): 20 mJ

Resistant to avalanche breakdown, ensuring reliable performance under transient conditions.

Maximum Operating Temperature: 150 °C

Can operate at elevated temperatures without compromising performance, suitable for high-temperature environments.

Maximum Drain-Source On Resistance: 0.021 ohm

Low on-resistance leads to minimal power loss and efficient power switching, improving overall performance.

Technical Specifications

Power Field Effect Transistors (FET) SISS40DN-T1-GE3 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Avalanche Energy Rating (EAS):

20 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (ID):

36.5 A

Maximum Drain-Source On Resistance:

.021 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

S-PDSO-N5

No. of Elements:

1

No. of Terminals:

5

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

60 A

Surface Mount:

YES

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SISS40DN-T1-GE3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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