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SIR680ADP-T1-RE3

Vishay Intertechnology

SIR680ADP-T1-RE3 by Vishay Intertechnology

Vishay Intertechnology's SIR680ADP-T1-RE3 is a N-channel Power FET with 80V DS Breakdown Voltage and 300A IDM. Ideal for switching applications, it features a built-in diode, 125A ID, and 0.00288 ohm RDS(on). Suitable for enhancement mode operation in high-power systems with operating temperatures ranging from -55 to 150°C.

Median Price

$2.570

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 5,966 parts In-Stock

1+ parts

$2.100

100+ parts

$1.130

1k+ parts

$0.845

10k+ parts

-

5,966

$2.100

$1.130

$0.845

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DigiKey

USA . 7,390 parts In-Stock

1+ parts

$2.570

100+ parts

$1.376

1k+ parts

$1.154

10k+ parts

$0.943

7,390

$2.570

$1.376

$1.154

$0.943

Mouser Electronics

USA . 9,888 parts In-Stock

1+ parts

$2.640

100+ parts

$1.380

1k+ parts

$1.110

10k+ parts

$0.942

9,888

$2.640

$1.380

$1.110

$0.942

Newark

USA . 85 parts In-Stock

1+ parts

$2.690

100+ parts

$1.910

1k+ parts

$1.430

10k+ parts

-

85

$2.690

$1.910

$1.430

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Verical

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

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-

10k+ parts

$0.993

6,000

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-

$0.993

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 93,398 parts In-Stock

1+ parts

$1.514

100+ parts

-

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93,398

$1.514

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Component Sense

UK . 3,792 parts In-Stock

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-

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3,792

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip USA

USA . 146 parts In-Stock

1+ parts

$6.947

100+ parts

-

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-

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146

$6.947

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Perfect Parts

USA . 6,720 parts In-Stock

1+ parts

-

100+ parts

-

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10k+ parts

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6,720

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

1+ parts

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100+ parts

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5,000

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Overview

Unleash the power of technology with the SIR680ADP-T1-RE3 by Vishay Intertechnology. This high-quality Power Field Effect Transistor (FET) offers unmatched performance and reliability, making it ideal for a wide range of switching applications. With its N-CHANNEL configuration and built-in diode, this transistor ensures seamless operation and maximum efficiency. Experience the value and benefits of Vishay Intertechnology's cutting-edge technology, providing customers with a superior solution that delivers exceptional results every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection to the transistor, increasing its durability and reliability.

Polarity or Channel Type: N-CHANNEL

N-Channel FETs typically have lower ON-state resistance and higher switching speeds compared to P-Channel FETs, making them more efficient for many applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode helps protect the circuit from voltage spikes and reverse polarity, enhancing the overall reliability of the transistor.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring high efficiency and performance in situations where rapid switching is required.

Surface Mount: YES

Allows for easy and efficient installation on circuit boards, making the overall assembly process more streamlined and cost-effective.

Maximum DS Breakdown Voltage: 80 V

Suitable for applications that require high voltage handling capabilities, providing a wide range of potential uses for the transistor.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs offer better control over the switching behavior, allowing for more precise operation in various applications.

Maximum Pulsed Drain Current (IDM): 300 A

Can handle high transient currents without compromising performance, making it suitable for demanding applications that require short bursts of power.

Maximum Drain Current (Abs) (ID): 125 A

Capable of handling high continuous currents, ensuring stable operation under heavy load conditions.

Maximum Power Dissipation (Abs): 104 W

Can dissipate significant amounts of power without overheating, contributing to the overall reliability and longevity of the transistor.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOSFET technology offers high switching speeds, low ON-state resistance, and high input impedance, making it ideal for many power management applications.

Maximum Operating Temperature: 150 °C

Capable of operating in high-temperature environments, making it suitable for applications that require reliable performance under elevated temperatures.

Maximum Turn On Time (ton): 50 ns

Fast turn-on time ensures quick response and high efficiency in switching applications, reducing power losses and improving overall performance.

Maximum Turn Off Time (toff): 78 ns

Fast turn-off time helps minimize switching losses and improve efficiency, making it suitable for high-speed applications.

Maximum Drain-Source On Resistance: 0.00288 ohm

Low ON-state resistance leads to lower power dissipation and higher efficiency in power switching applications.

Maximum Feedback Capacitance (Crss): 26 pF

Low feedback capacitance ensures stability and improved high-frequency performance in switching circuits.

Technical Specifications

Power Field Effect Transistors (FET) SIR680ADP-T1-RE3 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Avalanche Energy Rating (EAS):

80 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

80 V

Maximum Drain Current (Abs) (ID):

125 A

Maximum Drain Current (ID):

125 A

Maximum Drain-Source On Resistance:

.00288 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

26 pF

JESD-30 Code:

R-PDSO-F5

No. of Elements:

1

No. of Terminals:

5

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

300 A

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

78 ns

Maximum Turn On Time (ton):

50 ns

Trade Compliance

SIR680ADP-T1-RE3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

Category top products 20

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