Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Vishay Intertechnology's SIR606BDP-T1-RE3 is a N-channel Power FET with 100V DS breakdown voltage, ideal for switching applications. Featuring 80A max pulsed drain current and 20mJ avalanche energy rating, it operates in enhancement mode with -55 to 150 °C temperature range. Suitable for high-power circuit designs requiring fast turn-on/off times.
Median Price
$0.555
Lifecycle Status
Suppliers In-Stock
13
In-Stock Inventory
1k+
Farnell
1+ parts
$1.110
100+ parts
$0.707
1k+ parts
$0.450
10k+ parts
$0.417
Element14
$1.533
$0.975
$0.620
$0.618
Newark
$1.630
$1.210
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Arrow
$0.496
TTI Europe
$0.537
Verical
$0.498
Chip1Stop
$0.554
Avnet
$0.556
EBV Elektronik
Nova Conductors
$0.724
Greenchips
$0.759
$0.723
$0.689
$0.621
Vyrian
NAC Semi
$0.878
Corohmni
$0.406
Semicontronic
$0.422
$0.411
$0.409
Ampacity Inc.
Advanced Electronics
Aranea Global
$0.710
$0.682
Argo Parts USA
Continental Prestige Electronics
$1.440
$0.886
$0.574
Aztec Data Supply Inc.
$1.670
Microchip USA
$4.013
Futuretech Components
Perfect Parts
PLASTIC/EPOXY material provides good insulation and protection, enhancing the durability and reliability of the product.
N-CHANNEL type FETs typically have lower on-state resistance, higher switching speeds, and better performance overall compared to P-CHANNEL FETs.
Having a built-in diode simplifies circuit design and improves efficiency by reducing voltage spikes when switching.
Designed specifically for switching applications, ensuring fast and efficient operation in various electronic circuits.
With a high minimum breakdown voltage, this FET can handle higher voltage loads, making it suitable for a wide range of applications.
Rectangular package shape allows for easy mounting and integration into circuit boards, saving space and facilitating efficient assembly.
Enhancement mode FETs offer better control over the switching operation, allowing for precise and efficient power management.
High pulsed drain current rating enables the FET to handle high current spikes without damage, ensuring reliable operation in demanding conditions.
Avalanche energy rating indicates the FET's ability to withstand high-energy events, making it suitable for applications with potential voltage spikes.
High maximum drain current rating allows the FET to handle heavy loads, ensuring optimal performance in various power applications.
Having 5 terminals provides flexibility in circuit design and connections, allowing the FET to be easily integrated into different electronic systems.
With a high maximum power dissipation rating, this FET can effectively dissipate heat generated during operation, ensuring long-term reliability and performance.
Small outline package style saves space and allows for high-density PCB layouts, making it ideal for compact electronic devices and applications.
Metal-oxide semiconductor technology offers high efficiency, low power consumption, and fast switching speeds, making it suitable for various power management applications.
With a high maximum operating temperature, this FET can withstand elevated temperatures, ensuring reliable operation in harsh environmental conditions.
Silicon-based transistor element material provides good thermal stability and electrical properties, ensuring high performance and long-term reliability.
Fast turn-on time ensures quick response and efficient switching operation, making the FET suitable for high-speed applications.
With a low minimum operating temperature, this FET can operate reliably in cold environments, offering versatility in various temperature conditions.
Fast turn-off time ensures quick switching transitions, improving overall efficiency and performance in dynamic electronic systems.
High maximum drain current rating ensures the FET can handle heavy loads consistently, making it suitable for power applications requiring high current capacity.
Low on-resistance minimizes power losses and heat dissipation, improving efficiency and performance in power management applications.
Dual terminal position allows for versatile connections and simplifies circuit design, offering flexibility in integrating the FET into different electronic systems.
Having the case connected to the drain terminal improves heat dissipation and thermal management, enhancing the FET's overall performance and reliability.
Low feedback capacitance minimizes signal distortion and improves high-frequency performance, making the FET suitable for high-speed switching applications.
Power Field Effect Transistors (FET) SIR606BDP-T1-RE3 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Vishay Intertechnology
Avalanche Energy Rating (EAS):
Case Connection:
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
Maximum Feedback Capacitance (Crss):
JESD-30 Code:
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Minimum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Maximum Pulsed Drain Current (IDM):
Surface Mount:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
Maximum Turn Off Time (toff):
Maximum Turn On Time (ton):
SIR606BDP-T1-RE3 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Design/Specification - Mult Dev 07/Jun/2023
PCN Assembly/Origin - New solder paste 26/May/2023
Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.
Executive Chairman of the Board, Chief Business Development Officer
Marc Zandman
Chief Executive Officer, President, and Director
Joel Smejkal
Executive Vice President and Chief Financial Officer
Lori Lipcaman
Itzehoe - Fab Phase 1
Fabrication
Fab Initiation
2025
Germany
Itzehoe
Wafer Capacity
US - Fab 3
1986
USA
Santa Clara
24,500
US - Fab 2
1972
8,000
Austria
1984
Vöcklabruck
25,000
Taiwan
1967
Hsintien
12,000
Italy - Fab 8
1961
Canada
Torino
15,000
Israel
2000
Yokneam Illit
400
SMBJ18CA
Concord Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 18 V; Nominal Breakdown Voltage: 21.05 V; Polarity: BIDIRECTIONAL; Maximum Clamping Voltage: 29.2 V;
BAV99
Philips Semiconductors
RECTIFIER DIODE; Surface Mount: YES; Maximum Output Current: .1 A; Peak Reflow Temperature (C): 260; Terminal Finish: MATTE TIN; Maximum Reverse Recovery Time: .006 us;
2N7002
General Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: TO-236AB; Qualification: Not Qualified; Package Style (Meter): SMALL OUTLINE;
STM32H743XIH6
STMicroelectronics
STM32H743XIH6 by STMicroelectronics is a 32-bit microcontroller with Cortex-M7 CPU, 36-Ch 16-Bit ADC, and 2-Ch 12-Bit DAC. It operates at up to 48 MHz, has 1085440 bytes of RAM, and offers connectivity options like CAN, I2C, USB. Ideal for industrial applications requiring high-performance processing and extensive peripheral support.
Bytesonic Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148
Cheng-yi Electronic
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Frontier Electronics
Infinex
2N2222A
General Transistor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
LM317T
Linear Technology
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Operating Temperature (TJ-Min): 0 Cel; No. of Functions: 1; JESD-609 Code: e0;
LM107H/883C
General Electric Solid State
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Wideband: NO;
BSS84PH6327XTSA2
Infineon Technologies
BSS84PH6327XTSA2 by Infineon is a P-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and operates in enhancement mode. With a max drain current of 0.17A and on-resistance of 8 ohm, it offers reliable performance in small outline packages.
Motorola
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Maximum Collector-Base Capacitance: 8 pF;
LM7805CT
Integrated Circuit Technology
Other Regulators; No. of Terminals: 3; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %; Terminal Position: SINGLE; Operating Temperature (TJ-Min): 0 Cel;
M39029/56-351
Amphenol
CONNECTOR ACCESSORY; Minimum Operating Temperature: -65 Cel; Additional Features: STANDARD: MIL-DTL-38999; Contact Gender: FEMALE; MIL-Connector Accessory Name: CONTACT; Associated Military - Specifications: MIL-DTL-38999;
FDN306P
Onsemi
FDN306P by Onsemi is a P-CHANNEL FET with 12V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and GULL WING terminals. Operating in ENHANCEMENT MODE, it has a max ID of 2.6A and 0.04 ohm RDS(on), suitable for small outline packages at temperatures ranging from -55 to 150°C.
1N4148WT
Sangdest Microelectronics (Nanjing)
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BAV99-7-F
Diodes Incorporated
Diodes Inc. BAV99-7-F is a series-connected, center tap diode with 2 elements in a small outline package. It has a max reverse recovery time of 0.004 us and can handle up to 0.3A output current. Ideal for rectification applications requiring fast switching and low reverse current requirements.
M24308/2-1F
Bel Fuse
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Dielectric Withstanding Voltage (V): 1750VAC; No. of Connectors: ONE; Mixed Contacts: NO;
261
New England Microwave
Other Interface ICs; No. of Terminals: 14; Package Equivalence Code: FL14(UNSPEC); Power Supplies (V): +-5,-15; Package Body Material: PLASTIC/EPOXY; Surface Mount: YES;
BSC060N10NS3GATMA1/SAMPLE
BSC060N10NS3GATMA1/SAMPLE by Infineon is a N-CHANNEL FET with PLASTIC/EPOXY package, ideal for SWITCHING applications. It features SINGLE configuration with built-in DIODE and METAL-OXIDE SEMICONDUCTOR technology. This 8-terminal transistor has RECTANGULAR shape, DUAL position terminals, and DRAIN case connection for surface mount use.
BSC060N10NS3G
BSC060N10NS3G by Infineon is a N-CHANNEL FET with 100V DS breakdown voltage, 360A IDM, and 0.006 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 125W. This PLASTIC/EPOXY transistor has a small outline package style and can withstand temperatures up to 150°C.
NX3008NBK,215
NXP Semiconductors
NX3008NBK,215 by NXP Semiconductors is an N-CHANNEL FET with a max drain current of 0.4A and power dissipation of 0.42W. Ideal for applications requiring high efficiency in power management systems due to its single configuration and enhancement mode operation at up to 150°C operating temperature.
FDS8949_F085
Fairchild Semiconductor
FDS8949_F085 by Fairchild Semiconductor is a N-CHANNEL Power FET for SWITCHING applications. Features include 40V DS Breakdown Voltage, 20A IDM, and 0.029 ohm RDS(on). With a max power dissipation of 2W and operating temperature up to 150°C, it's ideal for high-performance electronic devices requiring efficient power management in compact designs.
FDD4685TF-SB82135
FDD4685TF-SB82135 by Fairchild Semiconductor is a P-CHANNEL FET for SWITCHING applications. It features 40V DS Breakdown Voltage, 100A IDM, and 0.027 ohm RDS(ON). With ENHANCEMENT MODE operation, it has a max temp of 150°C and AEC-Q101 compliance.
IRLML6344TRPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Terminal Form: GULL WING; JESD-30 Code: R-PDSO-G3;
IRF7759L2TRPBF
Infineon's IRF7759L2TRPBF is a N-CHANNEL FET with 75V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 640A IDM, 257mJ EAS, and 0.0023 ohm RDS(on). Operates in ENHANCEMENT MODE with 175°C max temp, suitable for high-power requirements in various electronic devices.
FQP47P06
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 160 W; JESD-30 Code: R-PSFM-T3; Maximum Pulsed Drain Current (IDM): 188 A;
BSS123
Sipex
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Terminal Finish: TIN LEAD; Moisture Sensitivity Level (MSL): 1;
IRLML6401TR
Shenzhen Changyuntong Ic Design
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Terminal Position: DUAL; Maximum Turn On Time (ton): 43 ns;
AUIRF540Z
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 92 W; Additional Features: AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY; JESD-609 Code: e3;
FQP27P06_SW82127
FQP27P06_SW82127 by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage and 108A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode and operates in ENHANCEMENT MODE. With a max power dissipation of 120W, this transistor has a -55 to 175 °C operating temperature range.
IRFR9024PBF
Vishay Intertechnology
Vishay Intertechnology's IRFR9024PBF is a P-CHANNEL FET with 60V DS Breakdown Voltage and 8.8A Drain Current. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 0.28 ohm On Resistance. Suitable for high-power circuits, it has a max power dissipation of 42W and can withstand temperatures from -55 to 150°C.
FDMS86300DC
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Peak Reflow Temperature (C): 260; No. of Elements: 1;
SI7157DP-T1-GE3
Vishay Intertechnology's SI7157DP-T1-GE3 is a P-channel FET with 20V DS breakdown voltage, 300A IDM, and 0.0016 ohm max RDS(on). Ideal for switching applications in enhancement mode operation. Features include built-in diode, small outline package style, and matte tin terminal finish.
IRF640
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Terminal Position: SINGLE; No. of Terminals: 3;
IRF5305PBF
IRF5305PBF by Infineon is a P-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. It features 110A IDM and 0.06 ohm RDS(ON), suitable for high-power circuits. With a max power dissipation of 110W and operating temperature up to 175°C, it ensures reliable performance in various environments.
IRF9530
Intersil
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 88 W; Avalanche Energy Rating (EAS): 500 mJ; No. of Elements: 1;
IRFB4115PBF
IRFB4115PBF by Infineon is a N-CHANNEL Power FET with 150V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 420A and EAS of 830mJ, making it suitable for high-power operations. With an operating temperature up to 175°C and 0.011 ohm RDS(on), this transistor offers reliable performance in various industrial settings.
IRLML6246TRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Terminal Finish: MATTE TIN; No. of Elements: 1;
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SIR681DP-T1-RE3
Vishay Intertechnology SIR681DP-T1-RE3 is a P-CHANNEL FET for switching applications. Features include 80V DS breakdown voltage, 125A IDM, and 0.0167 ohm RDS(on). Suitable for enhancement mode operation with -55 to 150 °C temperature range.
SIR622DP-T1-RE3
Vishay Intertechnology's SIR622DP-T1-RE3 is a N-channel FET with 150V DS breakdown voltage, ideal for switching applications. Features include 100A max pulsed drain current, 80mJ avalanche energy rating, and 0.0177 ohm max drain-source resistance. Suitable for enhancement mode operation in high-power circuits.
SIR622DP-T1-GE3
Vishay Intertechnology's SIR622DP-T1-GE3 is a N-channel Power FET with 150V DS breakdown voltage and 100A IDM. Ideal for switching applications, it features a single configuration with built-in diode, 0.0177 ohm max drain-source resistance, and operates in enhancement mode.
SIR692DP-T1-RE3
Vishay Intertechnology's SIR692DP-T1-RE3 is a N-channel FET with 250V DS breakdown voltage and 50A pulsed drain current, ideal for switching applications. Operating in enhancement mode, it has a max power dissipation of 104W and avalanche energy rating of 11.25mJ. This MOSFET features a small outline package style and can operate b/w -55 to 150°C efficiently.
SIR624DP-T1-GE3
Vishay Intertechnology's SIR624DP-T1-GE3 is a N-channel FET with 200V DS breakdown voltage and 50A pulsed drain current. Ideal for switching applications, it features a built-in diode, 0.064 ohm RDS(on), and 11.25mJ EAS rating. Operating in enhancement mode, this MOSFET has a max power dissipation of 52W and can withstand temperatures from -55 to 150°C.
SIR668ADP-T1-RE3
Vishay Intertechnology's SIR668ADP-T1-RE3 is a N-channel Power FET with 100V DS breakdown voltage and 200A IDM. Ideal for switching applications, it features a built-in diode, 0.0048 ohm RDS(on), and 61.2mJ EAS rating. The small outline package with 5 terminals and dual position offers enhanced performance in enhancement mode operation.
SIR662DP-T1-GE3
Vishay Intertechnology's SIR662DP-T1-GE3 is an N-channel Power FET with a built-in diode, ideal for switching applications. It features a 60V min DS breakdown voltage, 100A max pulsed drain current, and 0.0048 ohm max drain-source resistance. Operating in enhancement mode, this MOSFET has a 104W power dissipation rating and can withstand up to 150°C temperature.
SIR626LDP-T1-RE3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 104 W; Maximum Drain Current (Abs) (ID): 186 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
SIR610DP-T1-RE3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 104 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Pulsed Drain Current (IDM): 80 A;
SIR626DP-T1-RE3
Vishay Intertechnology SIR626DP-T1-RE3 is a N-channel FET with 60V DS breakdown voltage and 200A pulsed drain current. Ideal for switching applications, it features a built-in diode, 0.002 ohm max on-resistance, and 125mJ avalanche energy rating. Operating in enhancement mode, this MOSFET has a max power dissipation of 104W and can withstand temps up to 150°C.
SIR680DP-T1-RE3
Vishay Intertechnology's SIR680DP-T1-RE3 is a N-CHANNEL Power FET with 80V DS Breakdown Voltage and 200A IDM. Ideal for SWITCHING applications, it features a built-in diode, 0.0029 ohm Drain-Source On Resistance, and -55°C Min Operating Temp.
SIR696DP-T1-GE3
Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
SIR640ADP-T1-GE3
Vishay Intertechnology's SIR640ADP-T1-GE3 is a N-channel Power FET with 40V DS breakdown voltage and 100A max drain current. Ideal for switching applications, it features a built-in diode, operates in enhancement mode, and has an EAS of 80mJ. Suitable for surface mount assembly with a small outline package style.
SIR668DP-T1-RE3
Vishay Intertechnology's SIR668DP-T1-RE3 is a N-channel Power FET with 100V DS breakdown voltage, ideal for switching applications. Featuring single configuration with built-in diode, it offers 200A max pulsed drain current and 0.0048 ohm max drain-source resistance. Suitable for enhancement mode operation in high-power systems.
SIR638DP-T1-GE3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 104 W; No. of Elements: 1; Package Style (Meter): SMALL OUTLINE;
SIR632DP-T1-RE3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 69.5 W; Maximum Drain Current (ID): 29 A; Maximum Operating Temperature: 150 Cel;
SIR616DP-T1-GE3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 52 W; Peak Reflow Temperature (C): NOT SPECIFIED; Case Connection: DRAIN;
SIR670DP-T1-GE3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 60 V; Terminal Form: C BEND; Maximum Pulsed Drain Current (IDM): 200 A;
SIR618DP-T1-GE3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 48 W; No. of Terminals: 5; JESD-30 Code: R-PDSO-F5;
SIR606DP-T1-GE3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 44.5 W; Maximum Feedback Capacitance (Crss): 29 pF; Package Body Material: PLASTIC/EPOXY;
Supply Digital Components
$106.00
$54.25
$11.90
$7.29
Quantity
12,000 In-Stock
Total price ≈ $80,197.29
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