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SIHF640S-GE3

Vishay Intertechnology

SIHF640S-GE3 by Vishay Intertechnology

Vishay Intertechnology's SIHF640S-GE3 is a N-channel Power FET with 200V DS breakdown voltage and 72A pulsed drain current. Ideal for switching applications, it features a built-in diode, 0.18 ohm max on-resistance, and operates in enhancement mode. Suitable for surface mount assembly with Gull Wing terminals, this FET has a max power dissipation of 130W and can withstand temperatures up to 150°C.

Median Price

$2.385

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 1,221 parts In-Stock

1+ parts

$2.370

100+ parts

$1.260

1k+ parts

$0.950

10k+ parts

$0.837

1,221

$2.370

$1.260

$0.950

$0.837

DigiKey

USA . 935 parts In-Stock

1+ parts

$2.400

100+ parts

$1.251

1k+ parts

$0.927

10k+ parts

$0.838

935

$2.400

$1.251

$0.927

$0.838

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 70,933 parts In-Stock

1+ parts

$1.400

100+ parts

-

1k+ parts

-

10k+ parts

-

70,933

$1.400

-

-

-

NAC Semi

USA . 100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

100

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip USA

USA . 431 parts In-Stock

1+ parts

$13.520

100+ parts

-

1k+ parts

-

10k+ parts

-

431

$13.520

-

-

-

Overview

Unleash the power of innovation with the Vishay Intertechnology SIHF640S-GE3 Power Field Effect Transistor. Designed for switching applications, this N-channel transistor offers unparalleled performance and reliability. With a maximum drain current of 18 A and a low on-resistance of 0.18 ohm, this transistor delivers exceptional power dissipation capabilities. Whether you're looking to optimize energy efficiency or enhance system performance, the SIHF640S-GE3 is the perfect solution. Trust Vishay Intertechnology's expertise and experience in semiconductor technology to elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and reliability of the product while keeping it lightweight.

Polarity or Channel Type: N-CHANNEL

N-channel FETs are commonly used for high power applications due to their superior performance and efficiency.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode provides protection and prevents damage from reverse current flow, making it suitable for power switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in power control circuits.

Surface Mount: YES

Surface mount technology allows for easy and efficient installation on PCBs, saving space and improving overall system reliability.

Maximum DS Breakdown Voltage: 200 V

With a high breakdown voltage of 200V, this FET can handle high voltage switching applications with ease.

Maximum Power Dissipation (Abs): 130 W

The high power dissipation capability ensures the FET can handle high power loads without overheating or degrading performance.

Maximum Drain-Source On Resistance: 0.18 ohm

Low on-resistance results in minimal power loss and ensures efficient power delivery in switching applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150°C, this FET is suitable for use in a wide range of environments and applications.

Technical Specifications

Power Field Effect Transistors (FET) SIHF640S-GE3 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Additional Features:

AVALANCHE RATED

Avalanche Energy Rating (EAS):

580 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

200 V

Maximum Drain Current (Abs) (ID):

18 A

Maximum Drain Current (ID):

18 A

Maximum Drain-Source On Resistance:

.18 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

72 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SIHF640S-GE3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

Category top products 20

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