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SIHB35N60EF-GE3

Vishay Intertechnology

SIHB35N60EF-GE3 by Vishay Intertechnology

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Package Style (Meter): SMALL OUTLINE; No. of Elements: 1;

Median Price

$4.260

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 1,350 parts In-Stock

1+ parts

$3.990

100+ parts

$3.150

1k+ parts

-

10k+ parts

-

1,350

$3.990

$3.150

-

-

Arrow

USA . 1,338 parts In-Stock

1+ parts

$4.529

100+ parts

$2.894

1k+ parts

$2.832

10k+ parts

-

1,338

$4.529

$2.894

$2.832

-

Mouser Electronics

USA . 16 parts In-Stock

1+ parts

$6.490

100+ parts

$3.260

1k+ parts

$2.900

10k+ parts

-

16

$6.490

$3.260

$2.900

-

Verical

USA . 1,338 parts In-Stock

1+ parts

-

100+ parts

$2.894

1k+ parts

$2.832

10k+ parts

-

1,338

-

$2.894

$2.832

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 67,658 parts In-Stock

1+ parts

$2.894

100+ parts

-

1k+ parts

-

10k+ parts

-

67,658

$2.894

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-

-

Bristol Electronics

USA . 900 parts In-Stock

1+ parts

$5.179

100+ parts

$2.417

1k+ parts

$2.123

10k+ parts

-

900

$5.179

$2.417

$2.123

-

NAC Semi

USA . 13,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$6.570

10k+ parts

-

13,000

-

-

$6.570

-

ComSIT Distribution GmbH

Germany . 2,250 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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2,250

-

-

-

-

ACDS - Activité Composants Distribution Service

France . 900 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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900

-

-

-

-

Dan-Mar Components

USA . 900 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

900

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip USA

USA . 8,547 parts In-Stock

1+ parts

$18.088

100+ parts

-

1k+ parts

-

10k+ parts

-

8,547

$18.088

-

-

-

Authorized Procurement Solutions

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10,000

-

-

-

-

Technical Specifications

Power Field Effect Transistors (FET) SIHB35N60EF-GE3 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Additional Features:

AVALANCHE RATED

Avalanche Energy Rating (EAS):

298 mJ

Minimum DS Breakdown Voltage:

600 V

Maximum Drain Current (Abs) (ID):

32 A

Maximum Drain Current (ID):

32 A

Maximum Drain-Source On Resistance:

.097 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

7 pF

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

80 A

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

314 ns

Maximum Turn On Time (ton):

226 ns

Trade Compliance

SIHB35N60EF-GE3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

Category top products 20

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