Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Featured manufacturers
Vishay Intertechnology's SIA413ADJ-T1-GE3 is a P-CHANNEL FET with 12V DS Breakdown Voltage, 40A IDM, and 0.029 ohm RDS(ON). Ideal for SWITCHING applications in ENHANCEMENT MODE, this transistor operates b/w -55 to 150 °C with a peak reflow temp of 260C.
Median Price
$1.440
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4
In-Stock Inventory
1k+
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1+ parts
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$0.320
Argo Parts USA
$0.406
Continental Prestige Electronics
$0.411
Ampacity Inc.
$0.760
Semicontronic
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Corohmni
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Netroflash
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Durable and reliable material ensures longevity of the product.
P-channel FETs are known for their low on-resistance and high efficiency, making them a good choice for power management applications.
Suitable for applications requiring a breakdown voltage of up to 12V.
Designed specifically for switching applications, allowing for efficient control of power flow.
High pulsed drain current capability makes it suitable for applications requiring high current handling capacity.
With a high power dissipation rating, this FET can handle higher levels of power without overheating.
Can operate efficiently at high temperatures, making it suitable for demanding environments.
Fast turn-off time ensures quick response and switching capabilities.
Low on-resistance reduces power loss and improves efficiency of the FET.
Power Field Effect Transistors (FET) SIA413ADJ-T1-GE3 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Vishay Intertechnology
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SIA413ADJ-T1-GE3 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Assembly/Origin - Manufacturing Capacity Expansion 27/Jul/2023
Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.
Executive Chairman of the Board, Chief Business Development Officer
Marc Zandman
Chief Executive Officer, President, and Director
Joel Smejkal
Executive Vice President and Chief Financial Officer
Lori Lipcaman
Itzehoe - Fab Phase 1
Fabrication
Fab Initiation
2025
Germany
Itzehoe
Wafer Capacity
US - Fab 3
1986
USA
Santa Clara
24,500
US - Fab 2
1972
8,000
Austria
1984
Vöcklabruck
25,000
Taiwan
1967
Hsintien
12,000
Italy - Fab 8
1961
Canada
Torino
15,000
Israel
2000
Yokneam Illit
400
M85049/85-08W02
Glenair
CONNECTOR ACCESSORY; MIL Conformity: YES; Material: ALUMINIUM ALLOY; Associated Backshell Military - Specifications: MIL-DTL-38999; Shell Sizes: 08; DIN Conformity: NO;
SS14
Taitron Components
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N7002
National Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Package Style (Meter): SMALL OUTLINE; Terminal Position: DUAL;
1N4148
Good-ark Electronics
RECTIFIER DIODE; Surface Mount: NO; No. of Elements: 1; Maximum Non Repetitive Peak Forward Current: .5 A; Maximum Forward Voltage (VF): 1 V; No. of Phases: 1;
PIC18F4550-I/ML
Microchip Technology
The Microchip Technology PIC18F4550-I/ML is an 8-bit microcontroller with a max clock frequency of 48 MHz. It features 13-Ch 10-Bit ADC channels and USB connectivity, making it ideal for industrial applications requiring high-speed data processing and analog-to-digital conversion. With low power mode and flash ROM programmability, this chip offers efficient performance in compact designs.
LM555CN
Onsemi
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;
AT90CAN128-16AU
Atmel
MICROCONTROLLER, RISC; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 64; Package Code: TQFP; Package Shape: SQUARE;
BSS138
Changzhou Galaxy Century Microelectronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Minimum DS Breakdown Voltage: 50 V; Maximum Operating Temperature: 150 Cel;
08055C104KAT2A
KYOCERA AVX
08055C104KAT2A by KYOCERA AVX is a ceramic capacitor with 0.1uF capacitance and 50V rated DC voltage. It has X7R temperature characteristics, -55 to 125 °C operating range, and ±10% tolerance. Ideal for SMT applications requiring compact size and reliable performance in various electronic circuits.
LM358N
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
2N2222A
Tesla Elektronicke Soucastky
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BSS138BK,215
NXP Semiconductors
NXP Semiconductors' BSS138BK,215 is a N-CHANNEL FET with 0.36A max drain current and 0.42W power dissipation. Ideal for applications requiring single configuration and surface mount technology, such as enhancement mode operation in temperatures up to 150°C.
Continental Device India
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
LM2675M-ADJ/NOPB
Texas Instruments
LM2675M-ADJ/NOPB by Texas Instruments is a voltage-mode switching regulator with 1A output current, 37V max output voltage, and 260kHz max switching frequency. Ideal for automotive applications due to its -40°C to 125°C operating temperature range and compact small outline package design.
Changzhou Starsea Electronics
ULN2803A
Vishay Intertechnology
NPN; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: R-PDIP-T18;
M39029/58-360
Fct Electronic
CONNECTOR ACCESSORY; IEC Conformity: NO; Alternate Contact Sources: MILITARY; MIL Conformity: YES; Contact Gender: MALE; MIL-Connector Accessory Name: CONTACT;
SZNUP2105LT1G
SZNUP2105LT1G by Onsemi is a Transient Suppression Device with 2 elements in a common anode configuration. It has a max non-repetitive peak reverse power dissipation of 350W and breakdown voltage of 29.1V. Ideal for applications requiring bidirectional polarity protection, such as automotive electronics and industrial equipment due to its AEC-Q101 compliance and high clamping voltage of 44V.
1N4148WT
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Micro Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
IRLML6401GTRPBF
International Rectifier
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Minimum Operating Temperature: -55 Cel; Minimum DS Breakdown Voltage: 12 V;
IRF7425TRPBF
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Moisture Sensitivity Level (MSL): 1; Terminal Finish: MATTE TIN;
G3R75MT12D
Genesic Semiconductor
G3R75MT12D by Genesic Semiconductor is a N-CHANNEL FET with 1200V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring a max IDM of 70A and EAS of 199mJ, this ENHANCEMENT MODE transistor operates b/w -55 to 175 °C, with 0.097 ohm RDS(on) and 182W power dissipation in a RECTANGULAR package.
AUIRF540Z
Infineon Technologies
AUIRF540Z by Infineon Technologies is a N-CHANNEL FET with 100V DS breakdown voltage, ideal for switching applications. It features 140A max pulsed drain current and 0.0265 ohm max drain-source resistance. Operating in enhancement mode, it has a 175°C max temp rating and 92W power dissipation capability.
FDT439N
FDT439N by Onsemi is a N-CHANNEL Power FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a single configuration with built-in diode, capable of handling 20A IDM and 6.3A ID. With an operating temperature of up to 150°C, this MOSFET in PLASTIC/EPOXY package is suitable for various high-power electronic designs.
IRFR9024PBF
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 42 W; Maximum Power Dissipation Ambient: 42 W; No. of Terminals: 2;
IRF840PBF
Vishay Intertechnology's IRF840PBF is a N-CHANNEL Power FET with 500V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 32A IDM and 510mJ EAS ratings. The transistor operates in ENHANCEMENT MODE with 0.85 ohm RDS(on) and can handle up to 125W power dissipation.
IRF640STRLPBF
Vishay Siliconix
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 18 A; Avalanche Energy Rating (EAS): 580 mJ; Terminal Position: SINGLE;
STP40NF10L
STMicroelectronics
STP40NF10L by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage, 160A IDM, and 0.036 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 175°C temperature.
FDS9926A
FDS9926A by Onsemi is an N-CHANNEL Power FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max Drain Current of 6.5A, 0.03 ohm Drain-Source On Resistance, and operates in ENHANCEMENT MODE. This small outline transistor has a Max Power Dissipation of 1.6W and can handle up to 20A Pulsed Drain Current.
BSP230,135
NXP Semiconductors' BSP230,135 is a P-CHANNEL FET with 300V DS breakdown voltage. Ideal for switching applications, it features a single configuration with built-in diode and operates in enhancement mode. With 0.75A max pulsed drain current and 17 ohm max drain-source resistance, this MOSFET can handle various power requirements efficiently.
RFD14N05LSM9A
Harris Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: TO-252AA; Qualification: Not Qualified; Maximum Turn Off Time (toff): 100 ns;
MSC035SMA170B
Microsemi
Power Field-Effect Transistors;
IRF640SPBF
Vishay Intertechnology's IRF640SPBF is a N-CHANNEL Power FET with 200V DS Breakdown Voltage and 72A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, operates in ENHANCEMENT MODE, and has a max power dissipation of 130W.
IRLML0030TRPBF
Infineon's IRLML0030TRPBF is a N-CHANNEL FET with 30V DS Breakdown Voltage and 5.3A Drain Current. Ideal for SWITCHING applications, it features a built-in diode, 1.3W Power Dissipation, and operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150 °C.
IRF740PBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
FDD86102LZ
FDD86102LZ by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 40A Pulsed Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with built-in diode and operates in ENHANCEMENT MODE. Suitable for surface mount, this transistor has a max power dissipation of 54W and can handle up to 8A Drain Current.
FQP27P06
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 120 W; Operating Mode: ENHANCEMENT MODE; Terminal Position: SINGLE;
IRF9540PBF
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Operating Temperature: 175 Cel; Maximum Drain Current (ID): 19 A;
IXTA96P085T
Littelfuse
The Littelfuse IXTA96P085T is a P-CHANNEL FET with 85V DS breakdown voltage and 96A max drain current. Ideal for switching applications, it features a built-in diode, 300A pulsed drain current, and 0.013 ohm max on resistance. Suitable for enhancement mode operation in high-power systems with an operating temperature range of -55 to 150°C.
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SIA456DJ-T1-GE3
Vishay Intertechnology's SIA456DJ-T1-GE3 is a N-channel Power FET with 200V DS breakdown voltage and 2.6A max drain current. Ideal for switching applications, it operates in enhancement mode with 55ns turn on time and 75ns turn off time. Suitable for surface mount, this transistor has a max power dissipation of 19W in a small outline package.
SIA436DJ-T1-GE3
Vishay Intertechnology's SIA436DJ-T1-GE3 is a N-channel Power FET with 8V DS Breakdown Voltage and 12A Drain Current. Ideal for switching applications, it features a built-in diode, operates in enhancement mode, and has a max power dissipation of 19W.
SIA433EDJ-T1-GE3
Vishay Intertechnology's SIA433EDJ-T1-GE3 is a P-CHANNEL FET with 20V DS Breakdown Voltage, 12A Drain Current, and 0.018 ohm On Resistance. Ideal for SWITCHING applications in small outline packages, operating at up to 150°C.
SIA441DJ-T1-GE3
Vishay Intertechnology's SIA441DJ-T1-GE3 is a P-channel FET with 40V DS breakdown voltage, 30A IDM, and 0.047 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 19W. Suitable for surface mount designs, it has a temp range of -55 to 150°C.
SIA469DJ-T1-GE3
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 15.6 W; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Feedback Capacitance (Crss): 115 pF;
SIA440DJ-T1-GE3
Vishay Intertechnology's SIA440DJ-T1-GE3 is a N-channel Power FET with 40V DS breakdown voltage and 50A IDM. Ideal for switching applications, it features 0.026 ohm max RDS(on) and 12A ID, in a small outline package with drain connection.
SIA471DJ-T1-GE3
Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
SIA437DJ-T1-GE3
Vishay Intertechnology's SIA437DJ-T1-GE3 is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring a max IDM of 60A and ID of 29.7A, this MOSFET has 0.0145 ohm Drain-Source On Resistance. Its PLASTIC/EPOXY package with NO LEAD terminals is designed for surface mount in small outline configurations.
SIA446DJ-T1-GE3
Vishay Intertechnology's SIA446DJ-T1-GE3 is a N-channel Power FET with 150V DS breakdown voltage and 10A IDM. Ideal for switching applications, it features 0.177 ohm max RDS(on) and 2.5mJ EAS rating. The transistor operates in enhancement mode, has a drain case connection, and comes in a small outline package style.
SIA445EDJ-T1-GE3
Vishay Intertechnology's SIA445EDJ-T1-GE3 is a P-channel FET with 20V DS breakdown voltage, 50A IDM, and 0.0165 ohm RDS(on). Ideal for switching applications, it features a built-in diode, operates in enhancement mode, and has a max drain current of 12A.
SIA400EDJ-T1-GE3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 19.2 W; Maximum Drain Current (Abs) (ID): 12 A; Maximum Pulsed Drain Current (IDM): 30 A;
SIA483DJ-T1-GE3
Vishay Intertechnology's SIA483DJ-T1-GE3 is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 12A Drain Current, 0.021 ohm On Resistance, and operates in ENHANCEMENT MODE. This surface-mount transistor has a max power dissipation of 19W and can withstand temperatures up to 150°C.
SIA449DJ-T1-GE3
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Terminal Form: NO LEAD; Transistor Element Material: SILICON;
SIA461DJ-T1-GE3
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Peak Reflow Temperature (C): 260; Terminal Position: DUAL;
SIA462DJ-T1-GE3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Package Body Material: PLASTIC/EPOXY; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
SIA421DJ-T1-GE3
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 19 W; No. of Elements: 1; Maximum Time At Peak Reflow Temperature (s): 40;
SIA427DJ-T1-GE3
Vishay Intertechnology's SIA427DJ-T1-GE3 is a P-CHANNEL FET with 8V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring 12A Drain Current, 0.016 ohm On Resistance, and 19W Power Dissipation, it operates in ENHANCEMENT MODE at up to 150°C. This surface-mount transistor has a SQUARE package shape and DUAL terminals for efficient performance.
SIA444DJT-T1-GE3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 19 W; Maximum Drain Current (Abs) (ID): 12 A; Transistor Element Material: SILICON;
SIA430DJ-T1-GE3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 19.2 W; JESD-30 Code: S-XDSO-N3; No. of Terminals: 3;
SIA413ADJ-T4-GE3
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 19 W; Maximum Operating Temperature: 150 Cel; Transistor Element Material: SILICON;
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