Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Featured manufacturers
Vishay Intertechnology's SIA441DJ-T1-GE3 is a P-channel FET with 40V DS breakdown voltage, 30A IDM, and 0.047 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 19W. Suitable for surface mount designs, it has a temp range of -55 to 150°C.
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Mouser Electronics
$0.950
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DigiKey
$0.267
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TTI Europe
$0.196
TTI
$0.195
Farnell
$0.434
$0.278
$0.277
Element14
$0.255
$0.251
Arrow
$0.185
Verical
Chip1Stop
$0.233
Future Electronics
$0.435
Nova Conductors
$0.280
Maritex
$0.437
TME
$0.890
$0.372
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Vyrian
Rutronik
$0.212
NAC Semi
$0.685
IBS Electronics
$0.610
EZ Electronic Parts
Semicontronic
$0.164
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$0.159
Ampacity Inc.
Argo Parts USA
$0.272
Netroflash
$0.274
Modulus Dynamics
$0.319
Continental Prestige Electronics
$0.639
$0.355
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Advanced Electronics
$0.659
$0.626
Corohmni
$1.602
Aztec Data Supply Inc.
$1.890
Kepictronics
Eastek
$0.650
Futuretech Components
Authorized Procurement Solutions
This material provides durability and protection for the FET, making it a reliable choice for various applications.
The P-Channel type offers efficient switching capabilities, enhancing the performance of the transistor in circuit designs.
The built-in diode simplifies circuit design and offers protection against reverse current flow, adding to the functionality of the FET.
Designed specifically for switching applications, this FET ensures fast and efficient operation in various electronic systems.
Being surface mountable simplifies the installation process and saves space on the PCB, making it ideal for compact designs.
With a high breakdown voltage, this FET can withstand higher voltages, making it suitable for demanding applications.
The square shape offers a compact footprint, allowing for efficient placement on the PCB and maximizing use of space.
The no-lead terminal form simplifies the soldering process and enhances reliability in the connection, ensuring a secure fit.
The enhancement mode operation provides quick response times and efficient power handling, making this FET a versatile choice.
With a high pulsed drain current rating, this FET can handle surges of current, making it suitable for power-intensive applications.
The high avalanche energy rating ensures robust performance in transient conditions, making it a reliable choice for demanding environments.
This FET can handle continuous current flow up to 12A, making it suitable for various power applications.
The three-terminal design offers versatility in circuit configurations and allows for a range of connection options.
With a high power dissipation rating, this FET can handle heat effectively, ensuring stable operation in high-power applications.
The small outline package style saves space on the PCB and offers easy integration into compact electronic designs.
This technology ensures efficient power handling and low conduction losses, enhancing the overall performance of the FET.
With a high maximum operating temperature, this FET can withstand elevated temperatures, making it suitable for harsh environments.
The silicon material offers reliable performance and durability, ensuring long-term operation of the FET in various applications.
The low minimum operating temperature allows for operation in cold environments, making this FET suitable for a range of conditions.
The low drain-source on resistance minimizes power loss and improves efficiency, making this FET ideal for high-performance applications.
The dual terminal position offers flexibility in circuit design and allows for various connection configurations.
The drain case connection simplifies the circuit layout and ensures proper functionality of the FET in different circuit designs.
With a high peak reflow temperature, this FET can withstand the reflow process during assembly, ensuring reliable solder joints and long-term performance.
Power Field Effect Transistors (FET) SIA441DJ-T1-GE3 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Vishay Intertechnology
Avalanche Energy Rating (EAS):
Case Connection:
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JESD-30 Code:
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Minimum Operating Temperature:
Package Body Material:
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Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Maximum Pulsed Drain Current (IDM):
Qualification:
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Surface Mount:
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Transistor Application:
Transistor Element Material:
SIA441DJ-T1-GE3 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Assembly/Origin - Manufacturing Capacity Expansion 27/Jul/2023
Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.
Executive Chairman of the Board, Chief Business Development Officer
Marc Zandman
Chief Executive Officer, President, and Director
Joel Smejkal
Executive Vice President and Chief Financial Officer
Lori Lipcaman
Itzehoe - Fab Phase 1
Fabrication
Fab Initiation
2025
Germany
Itzehoe
Wafer Capacity
US - Fab 3
1986
USA
Santa Clara
24,500
US - Fab 2
1972
8,000
Austria
1984
Vöcklabruck
25,000
Taiwan
1967
Hsintien
12,000
Italy - Fab 8
1961
Canada
Torino
15,000
Israel
2000
Yokneam Illit
400
SMBJ18CA
Onsemi
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
RC0402JR-070RL
Yageo
Yageo's RC0402JR-070RL is a SMT fixed resistor with 0 ohm resistance, rated for temperatures from -55 to 155 °C. It features METAL GLAZE/THICK FILM tech, WRAPAROUND terminals, and 0.0625 W power dissipation. Ideal for jumper applications in electronics requiring compact surface mount components.
SS14
Changzhou Starsea Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148
Microchip Technology
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
LM107H
General Electric Solid State
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Minimum Voltage Gain: 25000;
Uniohm
MMBT3906LT1G
MMBT3906LT1G by Onsemi is a PNP BJT with VCEsat of 0.4V, hFE of 30, and fT of 250MHz. Ideal for small signal applications in electronics due to its low power dissipation, high transition frequency, and compact SOT-23 package. Suitable for use in temperature-sensitive environments with an operating range from -65°C to 150°C.
ULN2803ADWG4
Texas Instruments
ULN2803ADWG4 by Texas Instruments is a peripheral driver with 8 functions, open-collector output characteristics, and built-in transient protections. It operates at temperatures ranging from -40 to 85°C and has a max supply voltage of 3V. Ideal for applications requiring sink current flow direction in a small outline package style.
General Semiconductor
NE555D
NE555D by Texas Instruments is an 8-terminal IC with a supply voltage range of 4.5V to 16V, suitable for analog waveform generation applications. It operates at temperatures from 0°C to 70°C and has a max supply current of 15mA. The package style is small outline, making it ideal for compact electronic designs.
2N2222A
Cobham Plc
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 100; Maximum Turn Off Time (toff): 300 ns;
DS18B20Z+T&R
Maxim Integrated
TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Shape or Style: RECTANGULAR; Minimum Operating Temperature: -55 Cel; Package Body Material: PLASTIC/EPOXY;
LL4148
Micronas Semiconductor Holding Ag
RECTIFIER DIODE; Surface Mount: YES; No. of Phases: 1; Maximum Repetitive Peak Reverse Voltage: 100 V; Maximum Output Current: .2 A; Maximum Forward Voltage (VF): 1.2 V;
CR0805-FX-10R0ELF
Bourns
Bourns CR0805-FX-10R0ELF is a SMT fixed resistor with 10 ohm resistance, 1% tolerance, and 0.125 W power dissipation. Ideal for applications requiring a temperature range of -55 to 155 °C, such as automotive electronics and industrial control systems.
SPC TECHNOLOGY/ MULTICOMP
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
Weitronic Enterprise
Nexperia
CL31B104KBCNNNC
Samsung Electro-mechanics
Samsung Electro-mechanics CL31B104KBCNNNC is a ceramic capacitor with 0.1uF capacitance and 50V rated DC voltage. It features X7R temperature characteristics, -55 to 125 °C operating range, and compact SMT package style. Ideal for applications requiring high reliability in compact electronic devices.
BAV99
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
ERJ3EKF1002V
Panasonic
Panasonic's ERJ3EKF1002V is a fixed resistor with 10000 ohm resistance, 1% tolerance, and 0.1 W power dissipation. It operates b/w -55 to 155 °C and is ideal for surface mount applications in automotive electronics due to AEC-Q200 compliance.
SI7469DP-T1-GE3
Vishay Intertechnology
Vishay Intertechnology's SI7469DP-T1-GE3 is a P-channel FET with 80V DS breakdown voltage, 40A IDM, and 0.025 ohm RDS(on). Ideal for power management applications due to its 83W max power dissipation, small outline package style, and -55 to +150°C operating temperature range.
STP11NK50ZFP
STMicroelectronics
STP11NK50ZFP by STMicroelectronics is a N-CHANNEL FET with 500V DS Breakdown Voltage, 40A IDM, and 0.52 ohm RDS(on). Ideal for SWITCHING applications due to its 30W power dissipation, 190mJ EAS rating, and ENHANCEMENT MODE operation at up to 150°C.
FDT439N
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Qualification: Not Qualified; Transistor Element Material: SILICON;
NX3008NBKW,115
NXP Semiconductors
NX3008NBKW,115 by NXP Semiconductors is an N-CHANNEL FET with a max drain current of 0.35A and power dissipation of 0.31W. It operates in enhancement mode, suitable for applications requiring high temperature resistance up to 150°C such as power management systems.
IRFR9024PBF
Vishay Intertechnology's IRFR9024PBF is a P-CHANNEL FET with 60V DS Breakdown Voltage and 8.8A Drain Current. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 0.28 ohm On Resistance. Suitable for high-power circuits, it has a max power dissipation of 42W and can withstand temperatures from -55 to 150°C.
AUIRF4905STRL
Infineon Technologies
AUIRF4905STRL by Infineon is a P-CHANNEL FET for SWITCHING applications. It features 55V DS Breakdown Voltage, 280A IDM, and 0.02 ohm RDS(on). With a max power dissipation of 170W and operating temperature up to 150°C, it's ideal for high-power switching circuits in automotive and industrial electronics.
2N7002K
Philips Semiconductors
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; Maximum Drain Current (Abs) (ID): .34 A; Operating Mode: ENHANCEMENT MODE;
SCT2280KEC
ROHM
ROHM's SCT2280KEC is a N-CHANNEL FET with 1200V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and can handle up to 35A pulsed drain current. With a max power dissipation of 108W and operating temperature of 175°C, it offers reliable performance in various industrial settings.
AO3400A
Alpha & Omega Semiconductor
AO3400A by Alpha & Omega Semiconductor is a N-CHANNEL FET with 30V DS Breakdown Voltage and 5.7A ID. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE and operates in ENHANCEMENT MODE. With a max power dissipation of 1.4W, it can handle up to 30A IDM in a SMALL OUTLINE package style.
IPB010N06NATMA1
Infineon's IPB010N06NATMA1 is a N-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. Features include 720A pulsed drain current, 1600mJ avalanche energy rating, and 0.001 ohm max on-resistance. With a max power dissipation of 300W and operating temp up to 175°C, it's suitable for high-power circuits in various industries.
SUD50P04-09L-E3
Vishay Intertechnology's SUD50P04-09L-E3 is a P-channel Power FET with 40V DS breakdown voltage and 100A IDM. Ideal for applications requiring high power dissipation, such as automotive systems or industrial equipment due to its 136W max power dissipation and -55 to 175°C operating temperature range.
IRF3415STRLPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Maximum Operating Temperature: 175 Cel; JESD-30 Code: R-PSSO-G2;
FDP20N50F
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Terminal Form: THROUGH-HOLE; Avalanche Energy Rating (EAS): 1110 mJ;
NVTFS5116PLTWG
NVTFS5116PLTWG by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, 126A IDM, and 0.072 ohm RDS(ON). It is used in power applications requiring high drain current handling capabilities.
DMPH3010LK3-13
Diodes Incorporated
Power Field-Effect Transistors; JESD-609 Code: e3; Peak Reflow Temperature (C): 260; Terminal Finish: MATTE TIN;
SI7155DP-T1-GE3
Vishay Intertechnology's SI7155DP-T1-GE3 is a P-channel FET with 40V DS breakdown voltage and 200A pulsed drain current. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 104W. The MOSFET features a drain-source on resistance of 0.0046 ohm and can withstand temperatures from -55 to 150°C.
FDD4685-F085
FDD4685-F085 by Onsemi is a P-CHANNEL Power FET with 40V DS Breakdown Voltage and 100A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.027 ohm RDS(on), and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, it has a max power dissipation of 69W and can withstand temperatures up to 175°C.
BSP320SH6327XTSA1
Infineon's BSP320SH6327XTSA1 is a N-CHANNEL Power FET with 60V DS Breakdown Voltage. It features 11.6A IDM, 0.12 ohm RDS(on), and 150°C Max Operating Temp. Ideal for automotive applications due to AEC-Q101 compliance, it offers high efficiency in compact designs with its small outline package and built-in diode configuration.
FQT7N10LTF
FQT7N10LTF by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage. It has a Max IDM of 6.8A and EAS of 50mJ, suitable for SWITCHING applications. This SINGLE transistor in PLASTIC/EPOXY package operates in ENHANCEMENT MODE at up to 150°C, with 0.38 ohm RDS(on) and 2W Pdiss.
AUIRF7759L2TR
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Drain Current (ID): 375 A; No. of Elements: 1;
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SIA456DJ-T1-GE3
Vishay Intertechnology's SIA456DJ-T1-GE3 is a N-channel Power FET with 200V DS breakdown voltage and 2.6A max drain current. Ideal for switching applications, it operates in enhancement mode with 55ns turn on time and 75ns turn off time. Suitable for surface mount, this transistor has a max power dissipation of 19W in a small outline package.
SIA436DJ-T1-GE3
Vishay Intertechnology's SIA436DJ-T1-GE3 is a N-channel Power FET with 8V DS Breakdown Voltage and 12A Drain Current. Ideal for switching applications, it features a built-in diode, operates in enhancement mode, and has a max power dissipation of 19W.
SIA433EDJ-T1-GE3
Vishay Intertechnology's SIA433EDJ-T1-GE3 is a P-CHANNEL FET with 20V DS Breakdown Voltage, 12A Drain Current, and 0.018 ohm On Resistance. Ideal for SWITCHING applications in small outline packages, operating at up to 150°C.
SIA469DJ-T1-GE3
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 15.6 W; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Feedback Capacitance (Crss): 115 pF;
SIA440DJ-T1-GE3
Vishay Intertechnology's SIA440DJ-T1-GE3 is a N-channel Power FET with 40V DS breakdown voltage and 50A IDM. Ideal for switching applications, it features 0.026 ohm max RDS(on) and 12A ID, in a small outline package with drain connection.
SIA471DJ-T1-GE3
Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
SIA437DJ-T1-GE3
Vishay Intertechnology's SIA437DJ-T1-GE3 is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring a max IDM of 60A and ID of 29.7A, this MOSFET has 0.0145 ohm Drain-Source On Resistance. Its PLASTIC/EPOXY package with NO LEAD terminals is designed for surface mount in small outline configurations.
SIA446DJ-T1-GE3
Vishay Intertechnology's SIA446DJ-T1-GE3 is a N-channel Power FET with 150V DS breakdown voltage and 10A IDM. Ideal for switching applications, it features 0.177 ohm max RDS(on) and 2.5mJ EAS rating. The transistor operates in enhancement mode, has a drain case connection, and comes in a small outline package style.
SIA445EDJ-T1-GE3
Vishay Intertechnology's SIA445EDJ-T1-GE3 is a P-channel FET with 20V DS breakdown voltage, 50A IDM, and 0.0165 ohm RDS(on). Ideal for switching applications, it features a built-in diode, operates in enhancement mode, and has a max drain current of 12A.
SIA400EDJ-T1-GE3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 19.2 W; Maximum Drain Current (Abs) (ID): 12 A; Maximum Pulsed Drain Current (IDM): 30 A;
SIA483DJ-T1-GE3
Vishay Intertechnology's SIA483DJ-T1-GE3 is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 12A Drain Current, 0.021 ohm On Resistance, and operates in ENHANCEMENT MODE. This surface-mount transistor has a max power dissipation of 19W and can withstand temperatures up to 150°C.
SIA449DJ-T1-GE3
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Terminal Form: NO LEAD; Transistor Element Material: SILICON;
SIA461DJ-T1-GE3
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Peak Reflow Temperature (C): 260; Terminal Position: DUAL;
SIA462DJ-T1-GE3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Package Body Material: PLASTIC/EPOXY; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
SIA421DJ-T1-GE3
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 19 W; No. of Elements: 1; Maximum Time At Peak Reflow Temperature (s): 40;
SIA427DJ-T1-GE3
Vishay Intertechnology's SIA427DJ-T1-GE3 is a P-CHANNEL FET with 8V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring 12A Drain Current, 0.016 ohm On Resistance, and 19W Power Dissipation, it operates in ENHANCEMENT MODE at up to 150°C. This surface-mount transistor has a SQUARE package shape and DUAL terminals for efficient performance.
SIA444DJT-T1-GE3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 19 W; Maximum Drain Current (Abs) (ID): 12 A; Transistor Element Material: SILICON;
SIA430DJ-T1-GE3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 19.2 W; JESD-30 Code: S-XDSO-N3; No. of Terminals: 3;
SIA413ADJ-T1-GE3
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 19 W; No. of Elements: 1; Maximum Turn On Time (ton): 35 ns;
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