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SI7810DN-T1-GE3

Vishay Intertechnology

SI7810DN-T1-GE3 by Vishay Intertechnology

Vishay Intertechnology's SI7810DN-T1-GE3 is a N-channel FET with 100V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and can handle up to 20A pulsed drain current. With a max power dissipation of 3.8W and operating temperature of 150°C, it offers reliable performance in various electronic devices.

Median Price

$0.701

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 1,774 parts In-Stock

1+ parts

$2.050

100+ parts

$0.887

1k+ parts

$0.647

10k+ parts

$0.544

1,774

$2.050

$0.887

$0.647

$0.544

Mouser Electronics

USA . 24,975 parts In-Stock

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$0.621

24,975

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$0.621

TTI Europe

Germany . 24,000 parts In-Stock

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24,000

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TTI

USA . 9,000 parts In-Stock

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$0.701

9,000

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$0.701

Verical

USA . 3,000 parts In-Stock

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$0.743

3,000

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$0.743

Arrow

USA . 3,000 parts In-Stock

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$0.589

3,000

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$0.589

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 10,851 parts In-Stock

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$0.589

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10,851

$0.589

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ComSIT Distribution GmbH

Germany . 9,000 parts In-Stock

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9,000

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Distributors (Availability)

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Ampacity Inc.

Singapore . 10,575 parts In-Stock

1+ parts

$0.500

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10,575

$0.500

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Microchip USA

USA . 6,874 parts In-Stock

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$4.159

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6,874

$4.159

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Perfect Parts

USA . 25,962 parts In-Stock

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25,962

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Kepictronics

USA . 40 parts In-Stock

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Overview

Discover the power of the SI7810DN-T1-GE3 by Vishay Intertechnology, a top-quality N-channel Power FET with built-in diode for enhanced switching applications. With a maximum drain current of 3.4 A and a low on-resistance of 0.062 ohm, this transistor offers reliable performance in a compact package. Ideal for a wide range of electronic devices, the SI7810DN-T1-GE3 provides high efficiency and durability, making it a valuable choice for your next project. Experience the benefits of superior technology with Vishay Intertechnology's trusted products.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body provides durability and protection for the internal components of the FET.

Polarity or Channel Type: N-CHANNEL

N-channel FETs are commonly used in applications requiring high efficiency and fast switching speeds.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET ensures efficient power management and control.

Surface Mount: YES

The surface mount capability makes it easy to integrate this FET into compact electronic designs.

Minimum DS Breakdown Voltage: 100 V

With a minimum breakdown voltage of 100V, this FET can handle higher voltages without failure.

Maximum Pulsed Drain Current (IDM): 20 A

The high pulsed drain current rating of 20A allows this FET to handle momentary high current demands.

Maximum Power Dissipation (Abs): 3.8 W

With a maximum power dissipation of 3.8W, this FET can handle moderate power loads efficiently.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C ensures reliable performance in various operating conditions.

Technical Specifications

Power Field Effect Transistors (FET) SI7810DN-T1-GE3 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Avalanche Energy Rating (EAS):

18 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (Abs) (ID):

3.4 A

Maximum Drain Current (ID):

3.4 A

Maximum Drain-Source On Resistance:

.062 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

S-PDSO-C5

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

5

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

20 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Powers

Surface Mount:

YES

Terminal Finish:

PURE MATTE TIN

Terminal Form:

C BEND

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SI7810DN-T1-GE3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

Category top products 20

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