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SI4931DY-T1-E3

Vishay Intertechnology

SI4931DY-T1-E3 by Vishay Intertechnology

SI4931DY-T1-E3 by Vishay Intertechnology is a P-CHANNEL FET with 2 elements and built-in diode for SWITCHING applications. Features include 12V DS Breakdown Voltage, 6.7A Drain Current, and 0.018 ohm On Resistance. Ideal for small outline packages requiring high power dissipation up to 2W at 150°C operating temperature.

Median Price

$0.789

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 3 parts In-Stock

1+ parts

$0.118

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3

$0.118

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Chip1Stop

Japan . 1,257 parts In-Stock

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$0.849

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1,257

$0.849

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DigiKey

USA . 64 parts In-Stock

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$1.770

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$0.443

64

$1.770

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$0.443

Mouser Electronics

USA . 19,976 parts In-Stock

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$0.789

19,976

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$0.789

Verical

USA . 1,257 parts In-Stock

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$0.487

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$0.484

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1,257

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$0.487

$0.484

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Distributors (In-Stock)

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Nova Conductors

Japan . 83 parts In-Stock

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$0.826

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83

$0.826

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Bristol Electronics

USA . 17,524 parts In-Stock

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$0.438

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$0.327

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$0.304

17,524

-

$0.438

$0.327

$0.304

Dan-Mar Components

USA . 17,500 parts In-Stock

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17,500

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Chip Stock

USA . 10,988 parts In-Stock

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Vyrian

USA . 4,785 parts In-Stock

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A2Z Electronics, Inc.

USA . 24 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 4,555 parts In-Stock

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$0.414

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$0.414

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Semicontronic

India . 4,381 parts In-Stock

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$0.414

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$0.404

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$0.402

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4,381

$0.414

$0.404

$0.402

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Aztec Data Supply Inc.

USA . 261 parts In-Stock

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$0.480

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261

$0.480

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Corohmni

South Africa . 141 parts In-Stock

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$0.813

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$0.813

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Argo Parts USA

USA . 1,352 parts In-Stock

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$0.826

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$0.826

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Continental Prestige Electronics

USA . 1,229 parts In-Stock

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$0.826

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$0.809

1,229

$0.826

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$0.809

Netroflash

USA . 1,000 parts In-Stock

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$0.826

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1,000

$0.826

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Microchip USA

USA . 6,335 parts In-Stock

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$3.386

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6,335

$3.386

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Authorized Procurement Solutions

USA . 4,500 parts In-Stock

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4,500

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Kepictronics

USA . 111 parts In-Stock

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Overview

Upgrade your electronic devices with the high-quality SI4931DY-T1-E3 P-channel small signal field effect transistor from Vishay Intertechnology. Designed for switching applications, this transistor offers reliable performance and efficiency. With a maximum drain current of 6.7 A and a low on-resistance of 0.018 ohm, this component guarantees optimal functionality. Trust in Vishay Intertechnology's expertise in semiconductor technology to deliver exceptional products that meet your needs. Enhance your projects with the SI4931DY-T1-E3 and experience superior results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a durable and cost-effective solution for the transistor

Polarity or Channel Type: P-CHANNEL

Allows for efficient switching applications

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Offers flexibility in circuit design and functionality

Transistor Application: SWITCHING

Ideal for applications where rapid switching is required

Surface Mount: YES

Enables easy and efficient PCB assembly

Minimum DS Breakdown Voltage: 12 V

Ensures reliable operation within specified voltage limits

Package Shape: RECTANGULAR

Facilitates space-efficient mounting on PCBs

Operating Mode: ENHANCEMENT MODE

Provides improved performance in certain applications

Maximum Drain Current (Abs) (ID): 6.7 A

Handles high current levels for various applications

No. of Terminals: 8

Offers multiple connection points for versatile use

Maximum Power Dissipation (Abs): 2 W

Can safely dissipate heat generated during operation

Package Style (Meter): SMALL OUTLINE

Compact design suitable for space-constrained applications

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Provides efficient and reliable performance

Maximum Operating Temperature: 150 °C

Suitable for operation in a wide range of temperature conditions

Transistor Element Material: SILICON

Offers excellent performance and reliability

Maximum Drain-Source On Resistance: 0.018 ohm

Ensures low resistance for efficient conduction

Terminal Position: DUAL

Allows for versatile mounting and connectivity options

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand high reflow temperatures for soldering

Peak Reflow Temperature °C: 260

Suitable for standard reflow soldering processes

Technical Specifications

Small Signal Field Effect Transistors (FET) SI4931DY-T1-E3 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Minimum DS Breakdown Voltage:

12 V

Maximum Drain Current (Abs) (ID):

6.7 A

Maximum Drain Current (ID):

6.7 A

Maximum Drain-Source On Resistance:

.018 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SI4931DY-T1-E3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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