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SI4539DY

Vishay Intertechnology

SI4539DY by Vishay Intertechnology

Vishay Intertechnology's SI4539DY is an N/P-channel MOSFET with 5.8A max drain current and 2W max power dissipation. Ideal for enhancement mode operation, it can handle up to 150°C temp making it suitable for various applications requiring high power switching in surface mount configurations.

Median Price

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Lifecycle Status

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Vyrian

USA . 78,352 parts In-Stock

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Digiode

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ECAB

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LWI Electronics Inc

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Prism Electronics

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Zilex Electronics Inc.

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Nova Conductors

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Bristol Electronics

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Electronic Expediters

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Mil-Aero Solutions, Inc.

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A2Z Electronics, Inc.

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Infinite Electronics LLP (Excess)

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Formix International (Excess)

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Overview

Unlock unparalleled performance with the SI4539DY by Vishay Intertechnology. This high-quality N-channel and P-channel transistor promises exceptional efficiency and reliability in a variety of applications. From power management to industrial control, this enhancement mode transistor delivers superior performance with a maximum drain current of 5.8 A and a maximum operating temperature of 150°C. Trust Vishay Intertechnology to provide cutting-edge solutions for your electronic needs.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL AND P-CHANNEL

This transistor can work with both N-channel and P-channel configurations, providing versatility in circuit design.

Surface Mount: YES

Being surface mountable makes this transistor easy to integrate into compact electronic devices, saving space and facilitating PCB layout.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows for precise control over the transistor's behavior, making it suitable for a wide range of applications.

Maximum Drain Current (Abs) (ID): 5.8 A

With a high maximum drain current, this transistor can handle large loads, making it suitable for power applications.

Maximum Power Dissipation (Abs): 2 W

The high power dissipation rating ensures that the transistor can handle heat dissipation effectively, improving reliability in operation.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high performance and efficiency, making this transistor a reliable choice for various electronic circuits.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without compromising performance, ensuring reliability in extreme conditions.

Terminal Finish: Tin/Lead (Sn/Pb)

The tin/lead terminal finish provides good solderability and ensures reliable connections, making assembly and maintenance easier for the user.

Technical Specifications

Other Function Transistors SI4539DY attributes and parameters. Explore more Other Function Transistors devices from Vishay Intertechnology

Specs

Maximum Drain Current (Abs) (ID):

5.8 A

Maximum Drain Current (ID):

5.8 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e0

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

2 W

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Trade Compliance

SI4539DY Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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