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SI4542DY-E3

Vishay Intertechnology

SI4542DY-E3 by Vishay Intertechnology

Vishay Intertechnology's SI4542DY-E3 is a dual N- and P-channel MOSFET with 6.9A max drain current and 2W max power dissipation. Ideal for surface mount applications, it operates up to 150°C, making it suitable for various electronic devices requiring efficient power management.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 970 parts In-Stock

1+ parts

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970

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Goldney Electronics S.L.

Spain . 100 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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100

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Nova Conductors

Japan . 65 parts In-Stock

1+ parts

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65

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Pegasus Components GmbH

Germany . 29 parts In-Stock

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29

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 677 parts In-Stock

1+ parts

$7.635

100+ parts

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677

$7.635

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Ampacity Inc.

Singapore . 522 parts In-Stock

1+ parts

$23.050

100+ parts

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522

$23.050

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Aranea Global

USA . 2,000 parts In-Stock

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2,000

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Perfect Parts

USA . 4 parts In-Stock

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4

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Overview

Vishay Intertechnology presents the SI4542DY-E3, a high-quality N-channel and P-channel transistor designed for various applications. With a maximum drain current of 6.9A and a maximum power dissipation of 2W, this surface-mount transistor offers superior performance and reliability. Ideal for a wide range of electronic devices, the SI4542DY-E3 provides value and efficiency to customers seeking top-notch components for their projects. Trust Vishay Intertechnology for cutting-edge technology and unmatched quality in every transistor.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL AND P-CHANNEL

Having both N-channel and P-channel types allows for more flexibility in circuit design and potential applications.

Surface Mount: YES

Being surface mountable makes the product easier to integrate into compact electronic devices and PCB designs.

Maximum Drain Current (Abs) (ID): 6.9 A

The high maximum drain current capability allows for handling of higher power levels, making it suitable for demanding applications.

Maximum Power Dissipation (Abs): 2 W

The maximum power dissipation of 2W indicates that the transistor can handle significant heat dissipation without damage, ensuring reliable operation.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high performance, low power consumption, and can operate at high frequencies, making this transistor a suitable choice for various applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C allows for reliable performance in a wide range of environmental conditions.

Terminal Finish: Matte Tin (Sn)

Matte tin terminal finish provides good solderability and corrosion resistance, ensuring a reliable electrical connection.

Technical Specifications

Other Function Transistors SI4542DY-E3 attributes and parameters. Explore more Other Function Transistors devices from Vishay Intertechnology

Specs

Maximum Drain Current (Abs) (ID):

6.9 A

Maximum Drain Current (ID):

6.9 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

2 W

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn)

Trade Compliance

SI4542DY-E3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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