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SI4542DY

Vishay Intertechnology

SI4542DY by Vishay Intertechnology

Vishay Intertechnology's SI4542DY is a dual N- and P-channel MOSFET with 6.9A max drain current and 2W max power dissipation. Ideal for surface mount applications, it operates up to 150°C, making it suitable for various electronic devices requiring efficient power management.

Median Price

$0.909

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Rochester

USA . 67 parts In-Stock

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Farnell

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Verical

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Freelance Electronics

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Digiode

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Nova Conductors

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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PC Components Company LLC

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Bas Electronics GmbH & Co. KG

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Corohmni

South Africa . 348 parts In-Stock

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Corphita

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Aranea Global

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Component Stockers USA

USA . 4,468 parts In-Stock

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Continental Prestige Electronics

USA . 7,556 parts In-Stock

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Cyclops Electronics Ltd (Excess)

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Overview

Unlock limitless possibilities with the Vishay Intertechnology SI4542DY transistor. Crafted with precision and reliability, this N-CHANNEL AND P-CHANNEL Field Effect Transistor offers superior performance in a compact package. Perfect for a wide range of applications, this surface mount transistor boasts a maximum drain current of 6.9 A and a maximum power dissipation of 2 W, ensuring efficiency and durability. Trust Vishay Intertechnology to deliver quality components that elevate your projects to new heights.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL AND P-CHANNEL

Having both N-channel and P-channel options allows for flexibility in design and compatibility with different circuit configurations.

Surface Mount: YES

Being surface mountable makes installation easier and saves space on the PCB, ideal for compact electronic devices.

Maximum Drain Current (Abs) (ID): 6.9 A

With a high maximum drain current, this transistor can handle heavy loads and provide reliable performance in demanding applications.

Maximum Power Dissipation (Abs): 2 W

The high power dissipation capability ensures efficient operation and prevents overheating, increasing the product's longevity.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high efficiency and fast switching speeds, enhancing overall performance.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows for reliable operation in various environments without the risk of overheating.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/Lead terminal finish ensures good solderability and conductivity for reliable connections in the circuit.

Technical Specifications

Other Function Transistors SI4542DY attributes and parameters. Explore more Other Function Transistors devices from Vishay Intertechnology

Specs

Maximum Drain Current (Abs) (ID):

6.9 A

Maximum Drain Current (ID):

6.9 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e0

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

2 W

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Trade Compliance

SI4542DY Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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