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GL12T-HE3-18

Vishay Intertechnology

GL12T-HE3-18 by Vishay Intertechnology

GL12T-HE3-18 by Vishay Intertechnology is a single transient suppression device with 300W peak power dissipation and 13.3V breakdown voltage. Ideal for protecting electronic circuits from voltage spikes, it operates b/w -55°C to 150°C. Its unidirectional diode element made of silicon ensures max clamping voltage of 24V in a small outline package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,150 parts In-Stock

1+ parts

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6,150

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 270 parts In-Stock

1+ parts

$0.053

100+ parts

-

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270

$0.053

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Aztec Data Supply Inc.

USA . 2,464 parts In-Stock

1+ parts

$0.059

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2,464

$0.059

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Advanced Electronics

New Zealand . 450 parts In-Stock

1+ parts

$0.104

100+ parts

$0.095

1k+ parts

$0.085

10k+ parts

-

450

$0.104

$0.095

$0.085

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Ampacity Inc.

Singapore . 309 parts In-Stock

1+ parts

$2.010

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309

$2.010

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AZTECH Wire

Italy . 623 parts In-Stock

1+ parts

$18.677

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623

$18.677

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Continental Prestige Electronics

USA . 6,124 parts In-Stock

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6,124

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Argo Parts USA

USA . 3,487 parts In-Stock

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3,487

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Aranea Global

USA . 2,000 parts In-Stock

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2,000

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Overview

Enhance your electronic systems with the GL12T-HE3-18 Transient Suppression Device from Vishay Intertechnology. Trusted for their high-quality components, Vishay Intertechnology brings you a single-config, surface-mount diode that offers superior protection against voltage spikes. Ideal for automotive, industrial, and consumer applications, this device ensures reliable performance in extreme conditions. Invest in the best with Vishay Intertechnology and experience peace of mind knowing your devices are safeguarded.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection, making the device suitable for use in various environments.

Maximum Non Repetitive Peak Reverse Power Dissipation: 300 W

High power dissipation capability ensures the device can handle transient surges effectively.

Nominal Breakdown Voltage: 13.3 V

Provides efficient protection against voltage spikes above this level, safeguarding connected components.

Maximum Operating Temperature: 150 °C

Withstands high temperatures, making it suitable for applications where heat dissipation is a concern.

Reference Standard: AEC-Q101

Compliance with this automotive standard ensures reliability and performance quality for automotive applications.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Utilizes specialized diode technology for effective transient voltage suppression, ensuring protection for sensitive components.

Technical Specifications

Transient Suppression Devices GL12T-HE3-18 attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Maximum Breakdown Voltage:

17.2 V

Minimum Breakdown Voltage:

13.3 V

Nominal Breakdown Voltage:

13.3 V

Maximum Clamping Voltage:

24 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

300 W

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

UNIDIRECTIONAL

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

12 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

GL12T-HE3-18 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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