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GL12T-G3-18

Vishay Intertechnology

GL12T-G3-18 by Vishay Intertechnology

GL12T-G3-18 by Vishay Intertechnology is a single avalanche diode with 300W power dissipation, 13.3V breakdown voltage, and 24V clamping voltage. Ideal for transient suppression in electronics, it operates b/w -55°C to 150°C and features a small outline package with matte tin terminals for surface mount applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,070 parts In-Stock

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6,070

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 406 parts In-Stock

1+ parts

$0.013

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406

$0.013

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Corohmni

South Africa . 456 parts In-Stock

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$0.182

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456

$0.182

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Ampacity Inc.

Singapore . 808 parts In-Stock

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$2.010

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808

$2.010

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AZTECH Wire

Italy . 553 parts In-Stock

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$14.826

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553

$14.826

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Continental Prestige Electronics

USA . 5,193 parts In-Stock

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Argo Parts USA

USA . 2,262 parts In-Stock

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2,262

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Aranea Global

USA . 500 parts In-Stock

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Overview

Looking for top-quality transient suppression devices? Look no further than the GL12T-G3-18 by Vishay Intertechnology. With a reputation for excellence, Vishay Intertechnology delivers reliable products that exceed industry standards. Designed for various applications, this product offers unmatched protection against voltage spikes, ensuring your electronics stay safe and functional. Trust in Vishay Intertechnology to provide you with the best solutions for your needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the component, making it suitable for a variety of applications.

Maximum Non Repetitive Peak Reverse Power Dissipation: 300 W

The high power dissipation capability ensures that the device can handle transient surges and protect the circuit effectively.

Nominal Breakdown Voltage: 13.3 V

The nominal breakdown voltage indicates the voltage at which the device starts conducting, providing protection against overvoltage conditions.

Maximum Operating Temperature: 150 °C

The high operating temperature range allows the device to function reliably in various environmental conditions.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of trans voltage suppressor diodes ensures efficient suppression of voltage transients and protection of sensitive electronic components.

Technical Specifications

Transient Suppression Devices GL12T-G3-18 attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Maximum Breakdown Voltage:

17.2 V

Minimum Breakdown Voltage:

13.3 V

Nominal Breakdown Voltage:

13.3 V

Maximum Clamping Voltage:

24 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

300 W

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

UNIDIRECTIONAL

Maximum Repetitive Peak Reverse Voltage:

12 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

GL12T-G3-18 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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