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GL12T-HE3-08

Vishay Intertechnology

GL12T-HE3-08 by Vishay Intertechnology

GL12T-HE3-08 by Vishay Intertechnology is a single transient suppression device with 300W peak power dissipation and 13.3V breakdown voltage. Ideal for applications requiring protection against voltage transients in automotive electronics, it features a small outline package, operates b/w -55°C to 150°C, and complies with AEC-Q101 standards.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,223 parts In-Stock

1+ parts

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8,223

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Nova Conductors

Japan . 50 parts In-Stock

1+ parts

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50

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,125 parts In-Stock

1+ parts

$0.010

100+ parts

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1,125

$0.010

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Corohmni

South Africa . 372 parts In-Stock

1+ parts

$0.105

100+ parts

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372

$0.105

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Aztec Data Supply Inc.

USA . 2,736 parts In-Stock

1+ parts

$0.177

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2,736

$0.177

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AZTECH Wire

Italy . 430 parts In-Stock

1+ parts

$19.113

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430

$19.113

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Continental Prestige Electronics

USA . 5,856 parts In-Stock

1+ parts

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5,856

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Argo Parts USA

USA . 2,435 parts In-Stock

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2,435

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Aranea Global

USA . 1,000 parts In-Stock

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1,000

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Overview

Experience superior protection with the Vishay Intertechnology GL12T-HE3-08 Transient Suppression Device. Designed with precision and reliability in mind, this product delivers unmatched performance in safeguarding your electronic systems from voltage spikes. Ideal for a wide range of applications, this device offers peace of mind and long-term durability. Trust Vishay Intertechnology to provide you with the quality you need and the value you deserve. Elevate your technology with the GL12T-HE3-08 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy in the package body helps provide durability and protection for the device, making it a reliable choice.

Config: SINGLE

The single configuration simplifies installation and maintenance, making it an easy and efficient choice for users.

Surface Mount: YES

Being surface mountable allows for more flexibility in placement and can save space on a circuit board, making it a practical option.

Maximum Non Repetitive Peak Reverse Power Dissipation: 300 W

With a high power dissipation capacity, this device can effectively handle sudden surges in power, ensuring reliable performance.

Nominal Breakdown Voltage: 13.3 V

The nominal breakdown voltage of 13.3 V provides effective protection against overvoltage events, making it a suitable choice for voltage regulation.

Package Shape: RECTANGULAR

The rectangular package shape is space-efficient and makes it easy to integrate into various electronic systems, offering versatility to users.

No. of Terminals: 3

With three terminals, this device offers flexibility in connection options, allowing for customization in different circuit configurations.

Package Style (Meter): SMALL OUTLINE

The small outline package style is compact and lightweight, making it a convenient choice for applications where space is limited.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C ensures reliability in extreme conditions, making this device suitable for a wide range of environments.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature of -55°C allows for use in cold environments, enhancing the versatility of this product.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides good conductivity and corrosion resistance, ensuring long-term reliability and performance.

Terminal Position: DUAL

With dual terminal positions, this device offers multiple connection options, making it adaptable to different circuit layouts.

Minimum Breakdown Voltage: 13.3 V

The minimum breakdown voltage of 13.3 V ensures consistent protection against voltage spikes, enhancing the safety and reliability of the device.

Maximum Breakdown Voltage: 17.2 V

The high maximum breakdown voltage of 17.2 V provides an extra margin of safety against overvoltage events, making this product a dependable choice.

Reference Standard: AEC-Q101

Complying with the AEC-Q101 standard ensures high reliability and performance in automotive applications, making this device a trusted choice for automotive electronics.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The Trans Voltage Suppressor Diode serves as an effective transient voltage suppressor, protecting electronic circuits from voltage spikes and surges.

Technology: AVALANCHE

The avalanche technology used in this device allows for rapid response to overvoltage events, providing effective protection for sensitive electronic components.

Terminal Form: GULL WING

The gull wing terminal form offers secure and reliable connections, making this device suitable for applications where stability is crucial.

Maximum Repetitive Peak Reverse Voltage: 12 V

With a maximum repetitive peak reverse voltage of 12 V, this device can withstand repeated voltage surges, ensuring long-lasting performance.

Polarity: UNIDIRECTIONAL

The unidirectional polarity of this device ensures consistent voltage protection in a single direction, making it ideal for applications requiring one-way voltage suppression.

Maximum Clamping Voltage: 24 V

The maximum clamping voltage of 24 V limits the output voltage during transient events, providing effective protection for downstream components.

Diode Element Material: SILICON

The use of silicon as the diode element material ensures high performance and reliability in voltage suppression, making this product a durable choice for transient protection.

Technical Specifications

Transient Suppression Devices GL12T-HE3-08 attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Maximum Breakdown Voltage:

17.2 V

Minimum Breakdown Voltage:

13.3 V

Nominal Breakdown Voltage:

13.3 V

Maximum Clamping Voltage:

24 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

300 W

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

UNIDIRECTIONAL

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

12 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

GL12T-HE3-08 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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