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BFR92AW-GS08

Vishay Intertechnology

BFR92AW-GS08 by Vishay Intertechnology

Vishay Intertechnology's BFR92AW-GS08 is an NPN transistor with a single configuration, suitable for surface mount applications. It offers a max power dissipation of 0.2W, min DC current gain of 65 (hFE), and can operate at temperatures up to 150°C. Ideal for low-power electronics requiring a collector current of up to 0.03A.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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VNN

France . 5,018 parts In-Stock

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Vyrian

USA . 965 parts In-Stock

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Nova Conductors

Japan . 450 parts In-Stock

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450

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Aztec Data Supply Inc.

USA . 449 parts In-Stock

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$1.380

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449

$1.380

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Corohmni

South Africa . 314 parts In-Stock

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$1.954

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314

$1.954

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Semicontronic

India . 944 parts In-Stock

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$14.050

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$13.699

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$13.628

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944

$14.050

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$13.628

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AZTECH Wire

Italy . 845 parts In-Stock

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$15.356

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$15.356

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Ampacity Inc.

Singapore . 1,506 parts In-Stock

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$47.050

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Continental Prestige Electronics

USA . 2,903 parts In-Stock

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Argo Parts USA

USA . 1,044 parts In-Stock

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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Bastille Electronics

Australia . 50 parts In-Stock

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Overview

Unleash the power of innovation with the BFR92AW-GS08 by Vishay Intertechnology. This high-quality NPN transistor offers unparalleled performance and reliability, making it a top choice for a wide range of applications. From amplifiers to oscillators, this versatile component delivers exceptional value and benefits to our customers. Trust Vishay Intertechnology to provide cutting-edge solutions that exceed your expectations. Elevate your designs with the BFR92AW-GS08 today!

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this product versatile and compatible with a wide range of applications.

Configuration: SINGLE

The single configuration simplifies circuit design and makes it easier to integrate into electronic devices.

Surface Mount: YES

Surface mount capability allows for easy and space-efficient placement on circuit boards, ideal for compact electronic devices.

Maximum Power Dissipation: 0.2 W

With a maximum power dissipation of 0.2W, this transistor can handle moderate power levels without overheating, ensuring reliability in operation.

Minimum DC Current Gain (hFE): 65

A minimum DC current gain of 65 indicates that this transistor can provide significant amplification of input signals, essential for signal processing applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this product can withstand high temperatures, making it suitable for industrial or high-performance applications.

Maximum Collector Current (IC): 0.03 A

The maximum collector current of 0.03A allows this transistor to handle small to medium electrical loads, making it suitable for low-power applications.

Technical Specifications

Other Function Transistors BFR92AW-GS08 attributes and parameters. Explore more Other Function Transistors devices from Vishay Intertechnology

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

65

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

BFR92AW-GS08 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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