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TTC5200

Toshiba

TTC5200 by Toshiba

Toshiba's TTC5200 is a NPN BJT transistor with 230V VCE, 15A IC, and 30MHz fT. Ideal for amplifier applications due to its high DC current gain of 35 (hFE) and silicon element material. The package style is flange mount with a rectangular shape and through-hole terminals.

Median Price

$2.846

Lifecycle Status

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Farnell

UK . 152 parts In-Stock

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$2.300

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$1.360

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$1.170

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152

$2.300

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Element14

Singapore . 481 parts In-Stock

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$2.846

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$1.806

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DigiKey

USA . 1,500 parts In-Stock

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$6.490

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$2.335

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$1.389

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$1.181

1,500

$6.490

$2.335

$1.389

$1.181

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Nova Conductors

Japan . 550 parts In-Stock

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550

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Ampacity Inc.

Singapore . 2 parts In-Stock

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$2.240

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Continental Prestige Electronics

USA . 342 parts In-Stock

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$2.520

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$1.730

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$1.660

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342

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$1.660

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Kepictronics

USA . 42,000 parts In-Stock

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Aranea Global

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GreenTree Electronics

Israel . 1,940 parts In-Stock

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Argo Parts USA

USA . 1,645 parts In-Stock

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Perfect Parts

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Cyclops Electronics Ltd (Excess)

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Overview

Unleash the power of high-quality amplification with the Toshiba TTC5200 Power Bipolar Junction Transistor. Manufactured by a trusted brand, this NPN transistor offers reliability and durability in a variety of amplifier applications. With a maximum collector-emitter voltage of 230V and a maximum collector current of 15A, this transistor provides unmatched performance. Say goodbye to low-quality audio and hello to crystal-clear sound with the Toshiba TTC5200. Upgrade your amplification experience today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides a higher level of insulation and protection, making the transistor more durable and reliable for long-term use.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifiers and allow for easier biasing and control, making this transistor suitable for amplifier applications.

Configuration: SINGLE

The single configuration simplifies the design and makes it easier to integrate into circuit boards.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplifying electronic signals.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and placement within electronic devices or circuit boards.

Terminal Form: THROUGH-HOLE

Through-hole terminals offer a strong and reliable connection, suitable for applications where stability is crucial.

No. of Terminals: 3

Having 3 terminals allows for proper connection and control of the transistor within a circuit.

Package Style (Meter): FLANGE MOUNT

Flange mount allows for secure attachment to a surface, providing stability and ease of installation.

Minimum DC Current Gain (hFE): 35

Higher minimum current gain ensures consistent and reliable amplification of signals.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand increased heat levels, making it suitable for demanding applications.

Maximum Collector-Emitter Voltage: 230 V

Higher collector-emitter voltage rating allows for handling higher voltage levels, expanding the range of applications for this transistor.

Transistor Element Material: SILICON

Silicon material offers superior performance and reliability compared to other material options for transistors.

Maximum Collector Current (IC): 15 A

With a high collector current rating, this transistor can handle heavy loads and power demands in amplifier circuits.

Terminal Position: SINGLE

Single terminal position simplifies installation and ensures correct orientation within a circuit.

Case Connection: COLLECTOR

Collector connection offers a convenient way to connect the transistor in a circuit, enhancing ease of use and integration.

Nominal Transition Frequency (fT): 30 MHz

High nominal transition frequency allows for efficient amplification of high-frequency signals, making this transistor suitable for a wide range of applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) TTC5200 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

230 V

Configuration:

Minimum DC Current Gain (hFE):

35

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

TTC5200 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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