Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.
DS18B20U+
Analog Devices
DS18B20U+ by Analog Devices is a 12-bit temperature sensor with 1-Wire interface. It operates b/w -55 to 125°C, offering ±0.5°C accuracy. Suitable for applications requiring digital output and surface mounting feature.
2N2222A
Space Power Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
1N4148WS
Daco Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BSS138LT3G
Onsemi
BSS138LT3G by Onsemi is a N-CHANNEL FET with a min DS breakdown voltage of 50V. It is used for switching applications and has a max drain current of 0.2A and max drain-source on resistance of 3.5 ohm.
Panjit International
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N7002
Samsung
N-CHANNEL AND P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain-Source On Resistance: 5 ohm; No. of Terminals: 3;
BAV99
Transys Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
LM358M
Texas Instruments
LM358M by Texas Instruments is an Operational Amplifier with 2 functions, featuring a max input offset voltage of 9000 uV and a nominal voltage of 5 V. It is commonly used in applications requiring high common mode rejection ratio and low bias current, such as sensor interfaces and signal conditioning circuits.
C1206C104K5RACTU
KEMET Corporation
KEMET C1206C104K5RACTU is a ceramic capacitor with 0.1uF capacitance and 50V rated DC voltage. It has X7R temperature characteristics, -55 to 125 °C operating range, and ±10% tolerance. Ideal for SMT applications due to its rectangular package shape and wraparound terminals.
SMBJ18CA
Fairchild Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
RC0603FR-0710KL
Yageo
Yageo's RC0603FR-0710KL is a fixed resistor with 10000 ohm resistance, 1% tolerance, and 0.1 W power dissipation. It operates b/w -55 to 155 °C and is ideal for surface mount applications in electronics requiring precise resistance values.
Microsemi
2N7002-7-F
SPC TECHNOLOGY/ MULTICOMP
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Terminal Form: GULL WING; Package Shape: RECTANGULAR;
STM32F401CDY6TR
STMicroelectronics
STM32F401CDY6TR by STMicroelectronics is a 32-bit microcontroller with 393216 ROM words, 50 MHz clock frequency, and 36 I/O lines. It is used in applications requiring high-speed processing, such as industrial automation and consumer electronics.
1N4148
Unitrode
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Nexperia
Comchip Technology
LM317T/NOPB
National Semiconductor
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; JESD-609 Code: e3; Package Shape: RECTANGULAR;
LL4148
Changzhou Starsea Electronics
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
ULN2803ADW
ULN2803ADW by Texas Instruments is a peripheral driver with 8 functions, open-collector output characteristics, and built-in transient protections. It operates b/w -40 to 85 °C and has a max supply voltage of 3 V. Ideal for applications requiring buffer or inverter-based peripheral drivers with sink current flow direction.
IRFP460
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 280 W; Operating Mode: ENHANCEMENT MODE; Package Style (Meter): FLANGE MOUNT;
AUIRF7759L2TR
International Rectifier
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Drain Current (ID): 375 A; No. of Elements: 1;
BSS138
North American Philips Discrete Products Div
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; No. of Elements: 1; Maximum Drain Current (Abs) (ID): .2 A;
PSMN5R5-60YS,115
NXP Semiconductors
The NXP Semiconductors PSMN5R5-60YS,115 is a single N-channel power FET with 100A max drain current and 130W max power dissipation. Ideal for applications requiring high-power handling in enhancement mode operation, such as industrial motor control and power supplies.
DMP3098L-7
Diodes Incorporated
DMP3098L-7 by Diodes Inc. is a P-channel power FET with a min DS breakdown voltage of 30V and max pulsed drain current of 11A. It is used for switching applications and operates in enhancement mode.
FQD12N20LTM_F085
FQD12N20LTM_F085 by Fairchild Semiconductor is a N-CHANNEL Power FET with 200V DS Breakdown Voltage, 36A IDM, and 0.32 ohm RDS(on). It is used for SWITCHING applications in ENHANCEMENT MODE with a max power dissipation of 55W.
NTR4501NT1G
NTR4501NT1G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 20V DS Breakdown Voltage, 10A Max Pulsed Drain Current, and 0.08 ohm Max Drain-Source Resistance. Ideal for high-power switching circuits in various electronic devices.
IRFHS9301TRPBF
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; Package Shape: SQUARE; Operating Mode: ENHANCEMENT MODE;
IRF740SPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Pulsed Drain Current (IDM): 40 A; Minimum DS Breakdown Voltage: 400 V;
CSD18504Q5AT
CSD18504Q5AT by Texas Instruments is an N-CHANNEL FET for SWITCHING applications. Features include 40V DS Breakdown Voltage, 275A IDM, and 0.0098 ohm Drain-Source Resistance. Operating in ENHANCEMENT MODE, it has a max temp of 150°C and -55°C min temp.
SUM70101EL-GE3
Vishay Intertechnology
Vishay Intertechnology's SUM70101EL-GE3 is a P-channel FET with 100V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and can handle up to 240A pulsed drain current. Operating in enhancement mode, it has a max operating temperature of 175°C and low on-resistance of 0.0101 ohm.
2N7002BKW,115
2N7002BKW,115 by NXP Semiconductors is an N-CHANNEL FET with a max drain current of 0.31A and power dissipation of 0.88W. It operates in enhancement mode, suitable for applications requiring a single configuration such as power management systems or voltage regulators.
FDS4675
FDS4675 by Onsemi is a P-CHANNEL Power FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 50A and ID of 11A, with 0.013 ohm RDS(ON). The transistor operates in ENHANCEMENT MODE and can withstand temperatures from -55 to 175 °C.
Vishay Intertechnology's IRF740SPBF is a N-CHANNEL FET with 400V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 40A IDM, 520mJ EAS, and 0.55 ohm RDS(on). With a max power dissipation of 125W and operating temp of 150°C, it offers reliable performance in various electronic systems.
FDS3890
FDS3890 by Onsemi is a N-CHANNEL Power FET with 80V DS Breakdown Voltage and 20A IDM. Ideal for SWITCHING applications, it features a SEPARATE configuration with 2 ELEMENTS, built-in DIODE, and 0.044 ohm Drain-Source On Resistance. The transistor operates in ENHANCEMENT MODE, has a max power dissipation of 2W, and can withstand temperatures up to 175°C.
IRFH4251DTRPBF
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 63 W; Case Connection: SOURCE; Maximum Drain Current (Abs) (ID): 188 A;
NVMFD5C650NLWFT1G
NVMFD5C650NLWFT1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 502A IDM, and 0.0058 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance. Enhances performance in power management systems with its high current handling capabilities.
BS170
Advanced Microelectronic Products
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Drain Current (Abs) (ID): .5 A;
NDT456P
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Maximum Drain Current (ID): 7.5 A; No. of Elements: 1;
BSC093N15NS5ATMA1
Infineon Technologies
Infineon BSC093N15NS5ATMA1 is a N-CHANNEL FET with 150V DS breakdown voltage, 0.0093 ohm RDS(on), and 348A IDM. Ideal for switching applications due to its built-in diode, it operates in enhancement mode and has an EAS of 130mJ. The transistor's small outline package makes it suitable for surface mount designs.
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TPH8R008NH
Toshiba
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 80 V; Terminal Form: FLAT;
TPH8R008NH,L1Q
TPH8R008NH(TE12L)
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 61 W; Maximum Drain Current (Abs) (ID): 60 A; Operating Mode: ENHANCEMENT MODE;
TPH8R008NH(TE12L1)
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 61 W; Maximum Operating Temperature: 150 Cel; No. of Elements: 1;
TPH8R008NH(TE12L1,Q)
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 61 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): 60 A;
TPH8R008NH(TE12L,Q)
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 61 W; Maximum Drain Current (Abs) (ID): 60 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
TPH8R80ANH
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: FLAT; Transistor Application: SWITCHING; Avalanche Energy Rating (EAS): 79 mJ;
TPH8R80ANH,L1Q
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 61 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Shape: SQUARE;
TPH8R80ANH(TE12L)
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 61 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): 59 A;
TPH8R80ANH(TE12L1)
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 61 W; Maximum Drain Current (ID): 59 A; No. of Elements: 1;
TPH8R80ANH(TE12L1,Q)
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 61 W; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1;
TPH8R80ANH(TE12L,Q)
TPH8R903NL
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Terminal Form: FLAT; Transistor Application: SWITCHING;
TPH8R903NL(TE12L)
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 24 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): 20 A;
TPH8R903NL(TE12L1)
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 24 W; Operating Mode: ENHANCEMENT MODE; Maximum Operating Temperature: 150 Cel;
TPH8R903NL(TE12L1,Q)
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 24 W; Maximum Operating Temperature: 150 Cel; Operating Mode: ENHANCEMENT MODE;
TPH8R903NL(TE12L,Q)
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 24 W; Maximum Drain Current (Abs) (ID): 20 A; No. of Elements: 1;
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