Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 61 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): 59 A;
Median Price
-
Lifecycle Status
Suppliers In-Stock
0
In-Stock Inventory
< 1k
Power Field Effect Transistors (FET) TPH8R80ANH(TE12L) attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Toshiba
Configuration:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Field Effect Transistor Technology:
No. of Elements:
Operating Mode:
Maximum Operating Temperature:
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Sub-Category:
Surface Mount:
TPH8R80ANH(TE12L) Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.
LM107H
Rochester Electronics
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Code: TO-99; Package Shape: ROUND;
1N4148
Synsemi
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
LAN8720A-CP-TR
Microchip Technology
LAN8720A-CP-TR by Microchip: Ethernet transceiver with 100 Mbps data rate, operates at 3.3V, and consumes 54mA max supply current. Ideal for network interfaces in commercial applications due to its small size (4x4mm) and low power consumption.
2N2222A
Aeroflex/metelics
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Package Shape: ROUND; Transistor Application: SWITCHING;
MMBT3906LT1G
Onsemi
MMBT3906LT1G by Onsemi is a PNP BJT with VCEsat of 0.4V, hFE of 30, and fT of 250MHz. Ideal for small signal applications in electronics due to its low power dissipation, high transition frequency, and compact SOT-23 package. Suitable for use in temperature-sensitive environments with an operating range from -65°C to 150°C.
CRG0805F10K
Tyco Electronics Components
FIXED RESISTOR; Mounting Type: SURFACE MOUNT; Resistance: 10000 ohm; Rated Power Dissipation (P): .125 W; Maximum Operating Temperature: 125 Cel; Tolerance: 1 %;
RC0603FR-071KL
Yageo
Yageo's RC0603FR-071KL is a fixed resistor with 1000 ohm resistance, 1% tolerance, and 0.1 W power dissipation. Ideal for surface mount applications in electronics, it operates b/w -55 to 155 °C with a temperature coefficient of 100 ppm/°C.
C0603C104K5RACTU
KEMET Corporation
KEMET C0603C104K5RACTU is a ceramic capacitor with 0.1uF capacitance and 50V URdc. It has X7R temperature characteristics, -55 to 125 °C operating range, and ±10% tolerance. Ideal for SMT applications requiring compact size and reliable performance in various electronic circuits.
EEAGA1H4R7
Panasonic
Panasonic EEAGA1H4R7 is a 4.7uF, 50V Aluminum Electrolytic Capacitor with 0.1 Tan Delta and 0.003mA Leakage Current. Ideal for applications requiring high ripple current handling in temperatures ranging from -55 to 105°C.
SMBJ18CA
Sensitron Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N7002,215
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 30; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;
BAT54SLT1G
BAT54SLT1G by Onsemi is a fast recovery Schottky diode with 2 elements in series connected configuration. It has a max reverse recovery time of 0.005 us and a max forward voltage of 0.8 V. Ideal for applications requiring high-speed rectification, it operates b/w -55 to 150 °C and can handle a max output current of 0.2 A.
Yangzhou Yangjie Electronics
Itt Semiconductor
CDSOT23-SM712
Bourns
Bourns CDSOT23-SM712 is a bidirectional Transient Voltage Suppressor diode with 400W peak power dissipation and 20uA reverse current. Ideal for surge protection in applications requiring a max clamping voltage of 14V, such as IEC-61000-4-2 compliant systems. Operates b/w -55°C to 150°C with matte tin finish and Gull Wing terminals.
LM358MX
National Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
MMBT2222ALT1G
MMBT2222ALT1G by Onsemi is a NPN BJT transistor with 3 terminals, max power dissipation of 0.3W, and hFE of 75. Ideal for switching applications, it operates b/w -55 to 150 °C with a max collector-emitter voltage of 40V. This surface-mount device has a transition frequency of 300MHz and turn-on time of 35ns.
LM358N
Freescale Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
ULN2803ADWR
Texas Instruments
ULN2803ADWR by Texas Instruments is a peripheral driver with 8 functions, open-collector output characteristics, and built-in transient protections. It operates b/w -40 to 85°C, has a max supply voltage of 3V, and is ideal for buffer or inverter-based applications requiring sink current flow direction.
TM4C1294NCPDTI3
TM4C1294NCPDTI3 by Texas Instruments is a 32-bit microcontroller with Cortex-M4F CPU family. It features 8KB data EEPROM, 20-Ch 12-Bit ADC channels, and 32 DMA channels. Ideal for industrial applications requiring high-speed processing, it offers connectivity options like CAN, Ethernet, I2C, SPI, UART, and USB.
2N7000
Philips Semiconductors
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; No. of Elements: 1; Terminal Finish: Matte Tin (Sn);
IRFZ44NSTRL
International Rectifier Hirel Products
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: TO-263AB; Qualification: Not Qualified; Package Shape: RECTANGULAR;
SIRA01DP-T1-GE3
Vishay Intertechnology
Vishay Intertechnology's SIRA01DP-T1-GE3 is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 150A IDM, 31.2mJ EAS, and 0.0049 ohm RDS(ON). Operating from -55 to 150 °C, it has a fast ton of 42ns and toff of 98ns in a small outline package.
IRF3205ZSPBF
Infineon Technologies
IRF3205ZSPBF by Infineon is an N-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 440A and EAS of 180mJ, operating in ENHANCEMENT MODE. With a Drain Current of 75A and 0.0065 ohm On Resistance, it offers high power dissipation up to 170W in a SMALL OUTLINE package.
AUIRF3205ZSTRL
AUIRF3205ZSTRL by Infineon is a N-CHANNEL FET with 55V DS Breakdown Voltage, 440A IDM, and 0.0065 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 175°C, making it suitable for high-power tasks.
IRFR4620TRLPBF
IRFR4620TRLPBF by Infineon Technologies is a N-CHANNEL power FET with a min DS breakdown voltage of 200V. It is used for switching applications and has a max pulsed drain current of 100A.
FQD1N80TM
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 45 W; Transistor Application: SWITCHING; Maximum Drain Current (ID): 1 A;
BSP315PH6327XTSA1
Infineon's BSP315PH6327XTSA1 is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for power applications. Features include 4.68A IDM, 24mJ EAS, and 0.8 ohm RDS(ON). Suitable for automotive electronics due to AEC-Q101 compliance and high temp rating of 150°C.
FDC5612-F095
FDC5612-F095 by Fairchild Semiconductor is a N-CHANNEL Power FET with 4.3A max drain current and 1.6W power dissipation. Ideal for applications requiring high efficiency in enhancement mode operation, such as power management systems and motor control circuits.
CSD19537Q3T
CSD19537Q3T by Texas Instruments is an N-CHANNEL FET for SWITCHING applications. It features a Max Pulsed Drain Current of 219A, Min DS Breakdown Voltage of 100V, and Max Operating Temperature of 150°C. This SINGLE configuration transistor has a Surface Mount design with METAL-OXIDE SEMICONDUCTOR technology.
IRFS4010TRLPBF
IRFS4010TRLPBF by Infineon is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 180A Drain Current. It is used for SWITCHING applications, operates in ENHANCEMENT MODE, and has a max power dissipation of 375W.
G3R160MT12D
Genesic Semiconductor
Power Field-Effect Transistors;
SQJ457EP-T1_GE3
Vishay Intertechnology's SQJ457EP-T1_GE3 is a P-CHANNEL FET with 60V DS Breakdown Voltage, 100A IDM, and 0.025 ohm RDS(ON). Ideal for power management applications in automotive electronics due to AEC-Q101 standard compliance.
DMP3056L-7
Diodes Incorporated
DMP3056L-7 by Diodes Inc. is a P-channel FET with 30V DS breakdown voltage and 20A IDM. Ideal for switching applications, it features a single configuration with built-in diode, 0.05 ohm RDS(on), and operates in enhancement mode. Suitable for surface mount designs, it has a small outline package style and can withstand temperatures as low as -55°C.
NDT452AP
NDT452AP by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage and 5A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating from -65 to 150 °C, it has 0.065 ohm On Resistance and can handle up to 15A Pulsed Drain Current.
FDB3632_F085
Fairchild Semiconductor's FDB3632_F085 is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 12A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 0.009 ohm On Resistance, and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, this transistor has a max power dissipation of 310W and can withstand temperatures up to 175°C.
IRLML6401
International Rectifier
IRLML6401 by International Rectifier is a P-CHANNEL FET with 12V DS Breakdown Voltage and 34A IDM. Ideal for SWITCHING applications, it features a built-in diode, 33mJ EAS rating, and -55 to 150 °C operating temperature range.
IRF540NSTRRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 130 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Form: GULL WING;
SI7850DP-T1-E3
SI7850DP-T1-E3 by Vishay Intertechnology is an N-channel power field effect transistor (FET) with a min DS breakdown voltage of 60V. It is designed for switching applications and has a max pulsed drain current of 40A. This surface mount transistor operates in enhancement mode and has a max operating temperature of 150°C.
AUIRF3205
AUIRF3205 by Infineon Technologies is a N-CHANNEL Power FET with 75A max drain current and 200W max power dissipation. It operates at up to 175°C, making it suitable for high-power applications in automotive, industrial, and consumer electronics.
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
TPH8R008NH
Toshiba
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 80 V; Terminal Form: FLAT;
TPH8R008NH,L1Q
TPH8R008NH(TE12L)
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 61 W; Maximum Drain Current (Abs) (ID): 60 A; Operating Mode: ENHANCEMENT MODE;
TPH8R008NH(TE12L1)
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 61 W; Maximum Operating Temperature: 150 Cel; No. of Elements: 1;
TPH8R008NH(TE12L1,Q)
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 61 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): 60 A;
TPH8R008NH(TE12L,Q)
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 61 W; Maximum Drain Current (Abs) (ID): 60 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
TPH8R80ANH
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: FLAT; Transistor Application: SWITCHING; Avalanche Energy Rating (EAS): 79 mJ;
TPH8R80ANH,L1Q
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 61 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Shape: SQUARE;
TPH8R80ANH(TE12L1)
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 61 W; Maximum Drain Current (ID): 59 A; No. of Elements: 1;
TPH8R80ANH(TE12L1,Q)
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 61 W; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1;
TPH8R80ANH(TE12L,Q)
TPH8R903NL
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Terminal Form: FLAT; Transistor Application: SWITCHING;
TPH8R903NL,LQ
TPH8R903NL(TE12L)
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 24 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): 20 A;
TPH8R903NL(TE12L1)
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 24 W; Operating Mode: ENHANCEMENT MODE; Maximum Operating Temperature: 150 Cel;
TPH8R903NL(TE12L1,Q)
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 24 W; Maximum Operating Temperature: 150 Cel; Operating Mode: ENHANCEMENT MODE;
TPH8R903NL(TE12L,Q)
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 24 W; Maximum Drain Current (Abs) (ID): 20 A; No. of Elements: 1;
Supply Digital Components
1+ parts
$106.00
100+ parts
$54.25
1k+ parts
$11.90
10k+ parts
$7.29
Quantity
12,000 In-Stock
Total price ≈ $80,197.29
© 2023 All rights reserved