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RN4902(TE85L,F)

Toshiba

RN4902(TE85L,F) by Toshiba

Toshiba's RN4902(TE85L,F) is a dual NPN and PNP small signal BJT with 2 elements. It features a max power dissipation of 0.2W, min DC current gain of 50 (hFE), and max collector current of 0.1A. Ideal for applications requiring low-power amplification in compact electronic circuits.

Median Price

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Lifecycle Status

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1

In-Stock Inventory

< 1k

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Ampacity Inc.

Singapore . 746 parts In-Stock

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$19.050

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746

$19.050

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Kepictronics

USA . 4,964 parts In-Stock

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Argo Parts USA

USA . 3,501 parts In-Stock

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Continental Prestige Electronics

USA . 1,732 parts In-Stock

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Aranea Global

USA . 1,000 parts In-Stock

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Overview

Experience superior quality and reliability with the Toshiba RN4902(TE85L,F) small signal bipolar junction transistors. As a trusted manufacturer, Toshiba delivers cutting-edge technology in NPN and PNP polarity options for a wide range of applications. With a maximum power dissipation of 0.2W and a minimum DC current gain of 50, this transistor offers exceptional performance and efficiency. Whether you're designing consumer electronics, automotive systems, or industrial equipment, the RN4902(TE85L,F) provides unmatched value and benefits to elevate your projects to the next level. Choose Toshiba for excellence in every element.

Feature Benefit Bullets

Polarity or Channel Type: NPN AND PNP

This product offers both NPN and PNP options, providing flexibility for different circuit designs.

Surface Mount: YES

Surface mount capability allows for easy integration into compact electronic devices and PCBs.

No. of Elements: 2

Having 2 elements provides redundancy in case one element fails, enhancing overall reliability.

Maximum Power Dissipation (Abs): 0.2 W

With a relatively high maximum power dissipation, this transistor can handle a decent amount of power without overheating.

Minimum DC Current Gain (hFE): 50

A minimum DC current gain of 50 ensures stable and consistent amplification performance in various applications.

Transistor Element Material: SILICON

Silicon transistors offer good overall performance characteristics, making them suitable for a wide range of applications.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1 A, this transistor can handle moderate current loads, suitable for many low-power circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) RN4902(TE85L,F) attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Maximum Collector Current (IC):

Minimum DC Current Gain (hFE):

50

No. of Elements:

2

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Transistor Element Material:

SILICON

Trade Compliance

RN4902(TE85L,F) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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