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RN1608(TE85L,F)

Toshiba

RN1608(TE85L,F) by Toshiba

Toshiba's RN1608(TE85L,F) is a NPN BJT transistor with 2 elements, 0.3W power dissipation, and hFE of 80. Ideal for small signal applications requiring up to 0.1A collector current in surface mount configurations.

Median Price

$0.092

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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DigiKey

USA . 2,752 parts In-Stock

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$0.420

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$0.161

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$0.106

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Rochester

USA . 15,000 parts In-Stock

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$0.092

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$0.076

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$0.068

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Verical

USA . 15,000 parts In-Stock

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$0.085

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Nova Conductors

Japan . 300 parts In-Stock

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Ampacity Inc.

Singapore . 10,595 parts In-Stock

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$0.064

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Andel Nordic

Denmark . 454 parts In-Stock

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$4.249

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$4.079

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iodParts Technologies Inc.

India . 6,000 parts In-Stock

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Continental Prestige Electronics

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Argo Parts USA

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Aranea Global

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Overview

Discover the Toshiba RN1608(TE85L,F), a top-quality small signal NPN Bipolar Junction Transistor that offers exceptional performance and reliability. Manufactured by Toshiba, a renowned leader in the industry, this transistor is perfect for a wide range of applications. Whether you're working on amplifiers, oscillators, or switching circuits, this transistor delivers outstanding results. With a maximum power dissipation of 0.3W and a minimum DC current gain of 80, the RN1608(TE85L,F) provides excellent value and efficiency for your projects. Experience the benefits of Toshiba's superior technology with this high-quality transistor.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this product versatile for various applications.

Surface Mount: YES

Surface mount technology allows for easy and secure mounting on circuit boards, aiding in compact designs and efficient manufacturing processes.

No. of Elements: 2

Having 2 elements in a single package provides flexibility in circuit design and reduces the overall component count, leading to cost savings and simplification of circuits.

Maximum Power Dissipation (Abs): 0.3 W

With a maximum power dissipation of 0.3 W, this transistor can handle moderate power levels without overheating, ensuring reliable operation.

Minimum DC Current Gain (hFE): 80

A minimum DC current gain of 80 indicates good amplification characteristics, making this transistor suitable for signal amplification applications.

Transistor Element Material: SILICON

Silicon transistors offer high performance, reliability, and stability, making them ideal for a wide range of electronic applications.

Maximum Collector Current (IC): 0.1 A

The maximum collector current of 0.1 A allows this transistor to handle moderate current levels, making it suitable for small signal amplification and switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) RN1608(TE85L,F) attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Maximum Collector Current (IC):

Minimum DC Current Gain (hFE):

80

No. of Elements:

2

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

BIP General Purpose Small Signals

Surface Mount:

YES

Transistor Element Material:

SILICON

Trade Compliance

RN1608(TE85L,F) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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