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IRF254

Thomson Consumer Electronics

IRF254 by Thomson Consumer Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

Median Price

$12.550

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Freelance Electronics

USA . 5 parts In-Stock

1+ parts

$12.550

100+ parts

$13.178

1k+ parts

$12.424

10k+ parts

-

5

$12.550

$13.178

$12.424

-

ES Components

USA . 40 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

40

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Supply Digital

USA . 2,505 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,505

-

-

-

-

Glotronic Ltd.

UK . 1,920 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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1,920

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Technical Specifications

Power Field Effect Transistors (FET) IRF254 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Thomson Consumer Electronics

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

22 A

Maximum Drain Current (ID):

22 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e0

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Trade Compliance

IRF254 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-413-4362, 5961014134362

NIIN

014134362

Category top products 20

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