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V62/18622-02XE

Texas Instruments

V62/18622-02XE by Texas Instruments

V62/18622-02XE by Texas Instruments is a small outline voltage reference with output voltage range of 4.093952V to 4.098048V, ideal for military-grade applications. It operates b/w -55°C to 125°C, has a low profile design, and features CMOS technology with a max temp coefficient of 6 ppm/°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,725 parts In-Stock

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4,725

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Digiode

USA . 2,474 parts In-Stock

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One Stop Electronics

USA . 1,247 parts In-Stock

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$2.500

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$2.500

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Ampacity Inc.

Singapore . 931 parts In-Stock

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$4.500

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931

$4.500

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Semicontronic

India . 872 parts In-Stock

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$6.500

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$6.338

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$6.305

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872

$6.500

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AZTECH Wire

Italy . 348 parts In-Stock

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$9.285

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348

$9.285

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Parana Technologies

USA . 965 parts In-Stock

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$21.062

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$21.311

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965

$21.062

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DigiPath Technology Company

USA . 2,087 parts In-Stock

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$23.192

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$23.192

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IDEA Electronic Components Group

UK . 2,090 parts In-Stock

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$23.665

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$22.482

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$21.298

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ChromeModa Solutions

Germany . 155 parts In-Stock

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$23.665

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$19.405

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Corphita

USA . 379 parts In-Stock

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Corohmni

South Africa . 286 parts In-Stock

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Overview

Texas Instruments REF34xx/REF34xx-Q1 Low-Drift Low-Power Voltage References are low-temperature drift (6ppm/°C), low-power, high-precision CMOS voltage reference. These voltage references feature ±0.05% initial accuracy and low operating current with power consumption less than 95µA. These devices also offer very low output noise of 5µVp-p/V, which enables its ability to maintain high signal integrity with high-resolution data converters in noise critical systems. With a small SOT-23 package, REF34xx/Q1 offers enhanced specifications and pin-to-pin replacement for MAX607x and ADR34xx. The REF34xx/Q1 family is compatible with most of the ADC and DAC such as ADS1287, ADUCM360, ADS1112.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable material ensures long-lasting performance and protection for the internal components of the voltage reference.

Surface Mount: YES

Ease of installation and compatibility with modern electronics manufacturing processes.

Maximum Operating Temperature: 125 °C

Allows for reliable operation in a wide range of temperature conditions.

Minimum Output Voltage: 4.093952 V

Provides a stable minimum output voltage for precise voltage referencing.

Minimum Operating Temperature: -55 °C

Capable of functioning in extremely low-temperature environments.

Terminal Finish: NICKEL PALLADIUM GOLD SILVER

High-quality terminal finish for improved conductivity and corrosion resistance.

Maximum Output Voltage: 4.098048 V

Offers a stable maximum output voltage for accurate voltage referencing.

Length: 2.9 mm

Compact size for space-efficient design and integration into electronic circuits.

Temperature Grade: MILITARY

Suitable for use in military applications where reliability under harsh conditions is crucial.

Max Voltage Temp Coef: 6 ppm/°C

Low temperature coefficient ensures minimal voltage variation with temperature changes.

Technical Specifications

Voltage References V62/18622-02XE attributes and parameters. Explore more Voltage References devices from Texas Instruments

Specs

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e4

Length:

2.9 mm

Moisture Sensitivity Level (MSL):

2

No. of Functions:

1

No. of Outputs:

1

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Voltage:

4.098048 V

Minimum Output Voltage:

4.093952 V

Nominal Output Voltage:

4.096 V

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, LOW PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.45 mm

Maximum Supply Voltage (Vsup):

12 V

Minimum Supply Voltage (Vsup):

4.146 V

Surface Mount:

YES

Technology:

CMOS

Max Voltage Temp Coef:

6 ppm/Cel

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD SILVER

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Trim or Adjustable Output (V):

NO

Width (mm):

1.6 mm

Trade Compliance

V62/18622-02XE Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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