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V62/18622-01XE

Texas Instruments

V62/18622-01XE by Texas Instruments

V62/18622-01XE by Texas Instruments is a 3V voltage reference with 6 terminals, operating from -55 to 125 °C. It offers a precise output voltage range of 2.49875-2.50125 V, ideal for military-grade applications requiring low profile and small outline packages in CMOS technology.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,898 parts In-Stock

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Digiode

USA . 68 parts In-Stock

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Ampacity Inc.

Singapore . 1,596 parts In-Stock

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$0.500

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$0.500

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One Stop Electronics

USA . 250 parts In-Stock

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$1.500

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$1.500

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Semicontronic

India . 1,509 parts In-Stock

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$6.500

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$6.338

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$6.305

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$6.500

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AZTECH Wire

Italy . 730 parts In-Stock

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$9.547

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730

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Parana Technologies

USA . 1,257 parts In-Stock

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$15.570

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$15.944

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$15.570

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$15.944

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DigiPath Technology Company

USA . 1,045 parts In-Stock

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$17.144

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$15.773

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$17.144

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ChromeModa Solutions

Germany . 816 parts In-Stock

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$17.494

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$14.345

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IDEA Electronic Components Group

UK . 348 parts In-Stock

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$17.494

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$16.619

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$15.745

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348

$17.494

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Corphita

USA . 2,642 parts In-Stock

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Corohmni

South Africa . 82 parts In-Stock

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Overview

Discover the V62/18622-01XE by Texas Instruments, a top-quality voltage reference offering precise output voltage for your electronic applications. With a compact rectangular package and surface mount capability, this product combines reliability and convenience. Ideal for military-grade projects, the V62/18622-01XE ensures stable performance even in extreme conditions. Trust Texas Instruments' renowned expertise in semiconductor manufacturing to deliver the perfect solution for your voltage reference needs. Unlock the potential of your designs with the V62/18622-01XE today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material offers durability and high resistance to environmental factors, making this product suitable for a wide range of applications.

Nominal Supply Voltage (Vsup): 3 V

The 3 V nominal supply voltage ensures compatibility with a variety of circuits and systems, providing stable and reliable performance.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125°C, this voltage reference can withstand high temperature environments and maintain accuracy under challenging conditions.

Minimum Output Voltage: 2.49875 V

The minimum output voltage of 2.49875 V ensures precise and consistent voltage reference output, essential for accurate measurements and control.

Technology: CMOS

The CMOS technology used in this voltage reference ensures low power consumption and high accuracy, making it an efficient and reliable choice for various electronic devices and systems.

Maximum Supply Voltage (Vsup): 12 V

With a maximum supply voltage of 12 V, this voltage reference is suitable for applications requiring higher voltage levels, providing flexibility and compatibility with different power requirements.

Nominal Output Voltage: 2.5 V

The 2.5 V nominal output voltage offers a stable and precise reference level for voltage regulation and signal conditioning, ensuring consistent performance in diverse electronic applications.

Technical Specifications

Voltage References V62/18622-01XE attributes and parameters. Explore more Voltage References devices from Texas Instruments

Specs

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e4

Length:

2.9 mm

Moisture Sensitivity Level (MSL):

2

No. of Functions:

1

No. of Outputs:

1

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Voltage:

2.50125 V

Minimum Output Voltage:

2.49875 V

Nominal Output Voltage:

2.5 V

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, LOW PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.45 mm

Maximum Supply Voltage (Vsup):

12 V

Minimum Supply Voltage (Vsup):

2.55 V

Nominal Supply Voltage (Vsup):

3 V

Surface Mount:

YES

Technology:

CMOS

Max Voltage Temp Coef:

6 ppm/Cel

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD SILVER

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Trim or Adjustable Output (V):

NO

Width (mm):

1.6 mm

Trade Compliance

V62/18622-01XE Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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