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UCC37325DGNRG4

Texas Instruments

UCC37325DGNRG4 by Texas Instruments

UCC37325DGNRG4 by Texas Instruments is a MOSFET gate driver with 2 functions, operating at 4.5-15V. It features totem-pole output, turn-on time of 0.04us, and max output current of 4A. Ideal for commercial applications requiring high-speed switching in compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,011 parts In-Stock

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Digiode

USA . 4,414 parts In-Stock

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Nova Conductors

Japan . 900 parts In-Stock

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900

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Distributors (Availability)

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Parana Technologies

USA . 991 parts In-Stock

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$3.586

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$4.104

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991

$3.586

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DigiPath Technology Company

USA . 1,837 parts In-Stock

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$3.948

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$3.948

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ChromeModa Solutions

Germany . 4,868 parts In-Stock

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$4.029

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$3.304

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IDEA Electronic Components Group

UK . 932 parts In-Stock

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$4.029

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$3.626

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932

$4.029

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Advanced Electronics

New Zealand . 10 parts In-Stock

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$12.008

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$11.887

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$11.407

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10

$12.008

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AZTECH Wire

Italy . 809 parts In-Stock

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$14.988

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Ampacity Inc.

Singapore . 1,432 parts In-Stock

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$15.500

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One Stop Electronics

USA . 1,014 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 24,770 parts In-Stock

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Corphita

USA . 2,794 parts In-Stock

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Metaverse IC Inc.

Canada . 2,044 parts In-Stock

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Microchip USA

USA . 1,548 parts In-Stock

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Kepictronics

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Bastille Electronics

Australia . 100 parts In-Stock

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Overview

Elevate your projects with the UCC37325DGNRG4 by Texas Instruments, a top-of-the-line MOSFET Gate Driver designed for high-quality performance. With Texas Instruments' reputable manufacturing standards, this product offers unparalleled reliability and precision in a compact package. Ideal for a variety of applications, this driver provides customers with seamless integration, efficient power management, and enhanced control. Experience the value and benefits of the UCC37325DGNRG4 today and take your designs to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body ensures durability and reliability of the product.

Surface Mount: YES

Being surface mountable makes installation easier and more convenient.

Maximum Supply Voltage: 15 V

With a maximum supply voltage of 15V, this product can handle a wide range of voltage inputs.

No. of Functions: 2

Having multiple functions in a single unit increases efficiency and saves space in the circuit design.

Power Supplies (V): 4.5/15

The wide range of power supply options allows flexibility in different applications.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature ensures the product can withstand harsh environmental conditions.

Terminal Finish: Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)

The use of high-quality terminal finish materials ensures reliability and longevity of the product.

Technology: BICMOS

The use of BiCMOS technology combines the advantages of both bipolar and CMOS technologies, offering high performance and efficiency.

Technical Specifications

MOSFET Gate Drivers UCC37325DGNRG4 attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

NO

Input Characteristics:

STANDARD

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e4

Length:

3 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

2

No. of Functions:

2

No. of Terminals:

8

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Output Characteristics:

TOTEM-POLE

Maximum Output Current:

4 A

Nominal Output Peak Current Limit:

4 A

Output Polarity:

COMPLEMENTARY

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.19

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

4.5/15

Qualification:

Not Qualified

Maximum Seated Height:

1.07 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Current:

.6 mA

Maximum Supply Voltage:

15 V

Minimum Supply Voltage:

4.5 V

Nominal Supply Voltage:

14 V

Surface Mount:

YES

Technology:

BICMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Turn-off Time:

.05 us

Turn-on Time:

.04 us

Width:

3 mm

Trade Compliance

UCC37325DGNRG4 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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