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UC3715DG4

Texas Instruments

UC3715DG4 by Texas Instruments

UC3715DG4 by Texas Instruments is a MOSFET Gate Driver with 20V max supply voltage, 15V nominal voltage, and 2A max output current. It is used in applications requiring high side drivers, featuring a turn-on/off time of 0.1 us and operating temperature range of 0-70°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,372 parts In-Stock

1+ parts

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6,372

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Digiode

USA . 4,229 parts In-Stock

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4,229

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Distributors (Availability)

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Advanced Electronics

New Zealand . 300 parts In-Stock

1+ parts

$4.534

100+ parts

$4.126

1k+ parts

$3.718

10k+ parts

-

300

$4.534

$4.126

$3.718

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Parana Technologies

USA . 1,200 parts In-Stock

1+ parts

$11.987

100+ parts

-

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$12.392

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1,200

$11.987

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$12.392

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DigiPath Technology Company

USA . 1,988 parts In-Stock

1+ parts

$13.200

100+ parts

$12.144

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1,988

$13.200

$12.144

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ChromeModa Solutions

Germany . 2,391 parts In-Stock

1+ parts

$13.469

100+ parts

$11.045

1k+ parts

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2,391

$13.469

$11.045

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IDEA Electronic Components Group

UK . 1,751 parts In-Stock

1+ parts

$13.469

100+ parts

$12.796

1k+ parts

$12.122

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1,751

$13.469

$12.796

$12.122

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AZTECH Wire

Italy . 809 parts In-Stock

1+ parts

$18.878

100+ parts

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809

$18.878

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One Stop Electronics

USA . 393 parts In-Stock

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$44.500

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393

$44.500

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Microchip USA

USA . 3,274 parts In-Stock

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3,274

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Perfect Parts

USA . 896 parts In-Stock

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896

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Corphita

USA . 812 parts In-Stock

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812

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Overview

Get ready to elevate your electronic designs with the UC3715DG4 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers superior quality MOSFET Gate Drivers that offer reliability and high performance. This versatile product is perfect for a wide range of applications, providing exceptional value to customers looking for precision and efficiency in their projects. Trust Texas Instruments to provide you with cutting-edge technology that exceeds expectations. Elevate your designs with the UC3715DG4 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and provides protection to the internal components of the gate driver, making it reliable for long-term use.

Surface Mount: YES

Being Surface Mount compatible allows for easy integration onto PCBs, saving space and simplifying the assembly process.

Maximum Supply Voltage: 20 V

Can safely operate within a wide voltage range, providing flexibility in various applications.

Minimum Supply Voltage: 7 V

With a low minimum supply voltage, this gate driver can be efficiently powered in low-voltage setups.

Maximum Operating Temperature: 70 °C

Capable of operating at high temperatures without sacrificing performance, suitable for demanding environments.

Width: 3.9 mm

Compact size allows for easy placement on a PCB and reduces space constraints in tight layouts.

High Side Driver: YES

High-side driver capability allows for efficient control of power MOSFETs in various applications.

Technology: BIPOLAR

Utilizing bipolar technology provides high performance and reliability in driving MOSFETs for power applications.

Technical Specifications

MOSFET Gate Drivers UC3715DG4 attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

Driver No. of Bits:

2

High Side Driver:

YES

Input Characteristics:

STANDARD

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

4.9 mm

Moisture Sensitivity Level (MSL):

2

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Maximum Output Current:

2 A

Nominal Output Peak Current Limit:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Power Supplies (V):

15

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

Peripheral Drivers

Maximum Supply Current:

24 mA

Maximum Supply Voltage:

20 V

Minimum Supply Voltage:

7 V

Nominal Supply Voltage:

15 V

Surface Mount:

YES

Technology:

BIPOLAR

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Turn-off Time:

.1 us

Turn-on Time:

.1 us

Width:

3.9 mm

Trade Compliance

UC3715DG4 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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