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UC3708N

Texas Instruments

UC3708N by Texas Instruments

UC3708N by Texas Instruments is a MOSFET Gate Driver with 2 functions, operating at 10-35V. It features a totem-pole output and can handle up to 3A output current. Ideal for applications requiring high-speed switching such as power supplies and motor control systems.

Median Price

$14.401

Lifecycle Status

Suppliers In-Stock

20

In-Stock Inventory

1k+

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DigiKey

USA . 469 parts In-Stock

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$19.770

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$13.656

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$12.814

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$19.770

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Mouser Electronics

USA . 104 parts In-Stock

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$19.770

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$13.650

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$12.810

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Arrow

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$14.401

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UK . 13 parts In-Stock

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$11.728

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Rochester

USA . 1 parts In-Stock

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$10.260

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$9.180

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$8.640

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Nova Conductors

Japan . 50 parts In-Stock

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$2.885

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Digiode

USA . 1,784 parts In-Stock

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$8.712

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Vyrian

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Bristol Electronics

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Atlantic Semiconductor

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TME

Poland . 150 parts In-Stock

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Kiltronic GmbH

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Semtec, LLC

USA . 50 parts In-Stock

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ABC Electronics Ltd.

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ComSIT Distribution GmbH

Germany . 18 parts In-Stock

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LWI Electronics Inc

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J & M Industries LLC

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Semi Source

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ACDS - Activité Composants Distribution Service

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Holdelec - ElecDif-Pro

France . 2 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 1,798 parts In-Stock

1+ parts

$3.410

100+ parts

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$3.935

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$3.410

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$3.935

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DigiPath Technology Company

USA . 1,894 parts In-Stock

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$3.755

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$3.455

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$3.755

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ChromeModa Solutions

Germany . 3,349 parts In-Stock

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$3.832

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$3.142

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IDEA Electronic Components Group

UK . 1,781 parts In-Stock

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$3.449

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Component Stockers USA

USA . 575 parts In-Stock

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$7.880

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$8.890

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Corphita

USA . 3,940 parts In-Stock

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Continental Prestige Electronics

USA . 1,247 parts In-Stock

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Netroflash

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AZTECH Wire

Italy . 536 parts In-Stock

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Lixinc

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Kepictronics

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Perfect Parts

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Argo Parts USA

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Infinite Electronics LLP (Excess)

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iodParts Technologies Inc.

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Assy Fe

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Overview

Elevate your projects with the UC3708N from Texas Instruments, a high-quality MOSFET gate driver designed to enhance performance and reliability. With its advanced technology and top-notch manufacturing, this product offers superior power management capabilities and precise control for a wide range of applications. Experience the benefits of seamless operation, increased efficiency, and optimal safety that the UC3708N delivers. Trust Texas Instruments to provide you with the innovative solutions you need to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the driver.

Maximum Supply Voltage: 35 V

Allows for compatibility with a wide range of power supplies.

No. of Functions: 2

Offers flexibility in controlling multiple channels or functions.

Power Supplies (V): 10/35

Supports a range of power supply voltages for different application requirements.

No. of Terminals: 8

Provides multiple connection points for easy integration into circuits.

Output Characteristics: TOTEM-POLE

Allows for both sourcing and sinking current capability for driving MOSFETs.

Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)

Ensures good conductivity and corrosion resistance for reliable performance.

Maximum Output Current: 3 A

Can handle higher current loads to drive MOSFETs effectively.

Temperature Grade: COMMERCIAL

Suitable for standard commercial operating temperature ranges.

Technology: BIPOLAR

Utilizes bipolar technology for efficient and reliable operation.

Technical Specifications

MOSFET Gate Drivers UC3708N attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

NO

Input Characteristics:

STANDARD

JESD-30 Code:

R-PDIP-T8

JESD-609 Code:

e4

Length:

9.81 mm

No. of Channels:

2

No. of Functions:

2

No. of Terminals:

8

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Output Characteristics:

TOTEM-POLE

Maximum Output Current:

3 A

Nominal Output Peak Current Limit:

3 A

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP8,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

10/35

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Current:

26 mA

Maximum Supply Voltage:

35 V

Minimum Supply Voltage:

10 V

Nominal Supply Voltage:

20 V

Surface Mount:

NO

Technology:

BIPOLAR

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Turn-off Time:

.055 us

Turn-on Time:

.075 us

Width:

7.62 mm

Trade Compliance

UC3708N Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-549-4840, 5962015494840

NIIN

015494840

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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