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UC3709NG4

Texas Instruments

UC3709NG4 by Texas Instruments

UC3709NG4 by Texas Instruments is a MOSFET Gate Driver with 2 functions, 20V power supplies, and 1.5A max output current. It is used in applications requiring standard input characteristics, such as buffer or inverter-based MOSFET driver interface ICs.

Median Price

$11.875

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 7 parts In-Stock

1+ parts

$7.090

100+ parts

$4.670

1k+ parts

$3.870

10k+ parts

-

7

$7.090

$4.670

$3.870

-

Newark

USA . 7 parts In-Stock

1+ parts

$9.020

100+ parts

$6.420

1k+ parts

$5.220

10k+ parts

-

7

$9.020

$6.420

$5.220

-

Element14

Singapore . 7 parts In-Stock

1+ parts

$14.730

100+ parts

$10.310

1k+ parts

$7.690

10k+ parts

$7.690

7

$14.730

$10.310

$7.690

$7.690

Mouser Electronics

USA . 27 parts In-Stock

1+ parts

$16.150

100+ parts

$8.390

1k+ parts

-

10k+ parts

-

27

$16.150

$8.390

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 448 parts In-Stock

1+ parts

$11.372

100+ parts

-

1k+ parts

-

10k+ parts

-

448

$11.372

-

-

-

Chip Stock

USA . 5,600 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,600

-

-

-

-

Vyrian

USA . 1,903 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,903

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,740 parts In-Stock

1+ parts

$10.773

100+ parts

-

1k+ parts

-

10k+ parts

-

2,740

$10.773

-

-

-

Component Stockers USA

USA . 20 parts In-Stock

1+ parts

$11.760

100+ parts

-

1k+ parts

-

10k+ parts

-

20

$11.760

-

-

-

Parana Technologies

USA . 957 parts In-Stock

1+ parts

$13.183

100+ parts

-

1k+ parts

$13.687

10k+ parts

-

957

$13.183

-

$13.687

-

DigiPath Technology Company

USA . 2,254 parts In-Stock

1+ parts

$14.516

100+ parts

-

1k+ parts

-

10k+ parts

-

2,254

$14.516

-

-

-

ChromeModa Solutions

Germany . 705 parts In-Stock

1+ parts

$14.812

100+ parts

$12.146

1k+ parts

-

10k+ parts

-

705

$14.812

$12.146

-

-

IDEA Electronic Components Group

UK . 541 parts In-Stock

1+ parts

$14.812

100+ parts

$14.071

1k+ parts

$13.331

10k+ parts

-

541

$14.812

$14.071

$13.331

-

Lixinc

USA . 9,036 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

9,036

-

-

-

-

Microchip USA

USA . 1,462 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,462

-

-

-

-

Overview

Experience the superior quality and reliability of Texas Instruments with the UC3709NG4 MOSFET Gate Driver. This cutting-edge technology offers customers a versatile solution for their power management needs, with dual functions and a maximum supply voltage of 40V. Ideal for a wide range of applications, this product provides exceptional value, benefits, and advantages to users seeking high-performance components. Trust Texas Instruments for innovative solutions that deliver results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package material provides durability and protection for the internal components of the MOSFET gate driver, ensuring longevity and reliability in various operating conditions.

Maximum Supply Voltage: 40 V

Capable of handling high supply voltages, making it suitable for a wide range of applications where higher voltage requirements are needed.

No. of Functions: 2

Having multiple functions allows for versatile control and management of the MOSFETs, providing flexibility in various circuit design applications.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy integration into existing circuit layouts and designs, optimizing space utilization in electronic systems.

Power Supplies (V): 20

Operating within a 20V power supply range makes it compatible with common supply voltages, ensuring ease of integration with standard power sources.

Maximum Output Current: 1.5 A

Capable of delivering high output current, making it suitable for driving MOSFETs in a variety of power applications with demanding current requirements.

Technology: BIPOLAR

Bipolar technology allows for precise control and efficient switching of the MOSFETs, resulting in optimized performance and reliability in different circuit configurations.

Turn-on Time: 0.08 us

Fast turn-on time ensures quick response and efficient operation of the MOSFETs, reducing switching losses and improving overall system performance.

Technical Specifications

MOSFET Gate Drivers UC3709NG4 attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

NO

Input Characteristics:

STANDARD

JESD-30 Code:

R-PDIP-T8

JESD-609 Code:

e4

Length:

9.81 mm

No. of Channels:

2

No. of Functions:

2

No. of Terminals:

8

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Output Characteristics:

TOTEM-POLE

Maximum Output Current:

1.5 A

Nominal Output Peak Current Limit:

1.5 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP8,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

20

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Current:

12 mA

Maximum Supply Voltage:

40 V

Minimum Supply Voltage:

5 V

Nominal Supply Voltage:

20 V

Surface Mount:

NO

Technology:

BIPOLAR

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Turn-off Time:

.08 us

Turn-on Time:

.08 us

Width:

7.62 mm

Trade Compliance

UC3709NG4 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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