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TS321IDRE4

Texas Instruments

TS321IDRE4 by Texas Instruments

TS321IDRE4 by Texas Instruments is an Operational Amplifier with 5000uV Max Input Offset Voltage, 85dB Nominal CMRR, and 800kHz Unity Gain Bandwidth. Widely used in automotive applications due to its -40 to 125 °C operating temperature range and VOLTAGE-FEEDBACK architecture.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 9,669 parts In-Stock

1+ parts

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9,669

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Digiode

USA . 75 parts In-Stock

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75

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 204 parts In-Stock

1+ parts

$6.138

100+ parts

-

1k+ parts

$6.907

10k+ parts

-

204

$6.138

-

$6.907

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One Stop Electronics

USA . 385 parts In-Stock

1+ parts

$6.410

100+ parts

-

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385

$6.410

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DigiPath Technology Company

USA . 1,911 parts In-Stock

1+ parts

$6.759

100+ parts

$6.218

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1,911

$6.759

$6.218

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ChromeModa Solutions

Germany . 5,544 parts In-Stock

1+ parts

$6.897

100+ parts

$5.656

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5,544

$6.897

$5.656

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IDEA Electronic Components Group

UK . 458 parts In-Stock

1+ parts

$6.897

100+ parts

-

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$6.207

10k+ parts

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458

$6.897

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$6.207

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AZTECH Wire

Italy . 331 parts In-Stock

1+ parts

$10.068

100+ parts

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331

$10.068

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Corphita

USA . 4,978 parts In-Stock

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4,978

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Overview

Unlock unparalleled performance and precision with the TS321IDRE4 Operational Amplifier by Texas Instruments. Crafted with utmost quality and expertise, this small outline amplifier offers a myriad of applications in automotive systems, consumer electronics, and industrial automation. Experience seamless operation and exceptional reliability with a nominal unity gain bandwidth of 800 kHz and a minimum voltage gain of 25,000. Elevate your projects with Texas Instruments' cutting-edge technology and maximize efficiency like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the operational amplifier, making it suitable for a variety of applications.

Maximum Input Offset Voltage: 5000 uV

A low input offset voltage ensures accuracy in the amplifier's output signal, making it reliable for precision applications.

Nominal Supply Voltage / Vsup (V): 5

The nominal supply voltage of 5V allows for compatibility with a wide range of electronic devices and systems.

Nominal Unity Gain Bandwidth: 800 kHz

The high unity gain bandwidth of 800 kHz indicates the amplifier's ability to maintain stable operation at higher frequencies, making it suitable for fast signal processing.

Amplifier Type: OPERATIONAL AMPLIFIER

Being an operational amplifier, this product is versatile and can be used in a wide range of applications such as signal conditioning, amplification, and filtering.

Technical Specifications

Operational Amplifiers (Op Amps) TS321IDRE4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

±1.5/±15/3/30 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

800 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

85 dB

Input Offset Voltage Limit:

5000 uV

Minimum Voltage Gain:

25000

Nominal Slew Rate:

0.4 V/us

Peak Bias Current:

200 nA

Maximum Bias Current (IIB) @25 °C:

150 nA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

32 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

1 mA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

TS321IDRE4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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