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TS321AIDT

STMicroelectronics

TS321AIDT by STMicroelectronics

TS321AIDT from STMicroelectronics is a versatile operational amplifier ideal for automotive applications. It features a max input offset voltage of 3000 µV, a common mode reject ratio of 85 dB, and operates within -40 °C to 125 °C. Its compact design and low bias current make it suitable for precision tasks.

Median Price

-

Lifecycle Status

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3

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1k+

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Vyrian

USA . 10,732 parts In-Stock

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10,732

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Digiode

USA . 732 parts In-Stock

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732

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Anansix

USA . 262 parts In-Stock

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262

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IDEA Electronic Components Group

UK . 1,681 parts In-Stock

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$3.436

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-

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$3.093

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1,681

$3.436

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$3.093

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MKK Technologies

India . 19 parts In-Stock

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$6.462

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19

$6.462

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DigiPath Technology Company

USA . 19 parts In-Stock

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$6.462

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19

$6.462

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AZTECH Wire

Italy . 967 parts In-Stock

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$12.180

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$12.180

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Microchip USA

USA . 338 parts In-Stock

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$27.759

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338

$27.759

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Vigor

Singapore . 9,833 parts In-Stock

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9,833

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A-Z Elektronik GmbH

Germany . 5,771 parts In-Stock

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Corphita

USA . 4,434 parts In-Stock

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4,434

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Parana Technologies

USA . 1,170 parts In-Stock

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$4.108

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1,170

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$4.108

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Overview

Elevate your designs with the TS321AIDT from STMicroelectronics—trusted for its exceptional quality and reliability. This operational amplifier excels in automotive applications, delivering superior performance with minimal bias current and impressive common mode rejection. With its compact surface-mount design, it offers flexibility for various projects while ensuring durability at extreme temperatures. Experience the advantages of ST's innovation and enhance your systems with precision and efficiency!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy makes the Op Amp lightweight and suitable for high-volume production.

Maximum Input Offset Voltage: 3000 uV

A low input offset voltage ensures greater accuracy in amplification, making this Op Amp ideal for precision applications.

Maximum Average Bias Current (IIB): 0.2 uA

Low bias current minimizes errors in low-level signal amplification, enhancing performance in sensitive applications.

Surface Mount: YES

Surface mounting provides easier integration into compact circuit boards, making it suitable for modern electronics.

Package Shape: RECTANGULAR

The rectangular package shape optimizes space on a PCB, facilitating a more organized layout.

Nominal Common Mode Reject Ratio: 85 dB

A high common mode rejection ratio enhances the Op Amp’s ability to eliminate noise, ensuring more reliable signal processing.

Nominal Supply Voltage / Vsup (V): 5

Standard supply voltage makes this Op Amp compatible with a wide range of digital applications.

Power Supplies (V): +-1.5/+-15/3/30

Versatile power supply options allow for flexible application in various electronic designs.

No. of Terminals: 8

Eight terminals provide sufficient connections for operational configurations, increasing design versatility.

Package Style (Meter): SMALL OUTLINE

The small outline packaging is ideal for space-constrained designs without sacrificing performance.

Maximum Supply Voltage Limit: 32 V

A high voltage limit ensures compatibility with a range of systems, enhancing application flexibility.

Maximum Operating Temperature: 125 °C

A maximum operating temperature of 125 °C allows reliable performance in demanding environments.

Maximum Bias Current (IIB) @25°C: 0.15 uA

This low bias current at room temperature optimizes performance in low-voltage signal applications.

Frequency Compensation: YES

Built-in frequency compensation ensures stability over a wide range of operating conditions.

Minimum Voltage Gain: 25000

A high minimum voltage gain allows for significant amplification of low-level signals, making this Op Amp suitable for various applications.

Minimum Operating Temperature: -40 °C

The ability to function in low temperatures makes this Op Amp ideal for automotive and industrial applications.

Terminal Finish: NICKEL PALLADIUM GOLD

This premium terminal finish ensures excellent solderability and longevity in electronic connections.

Terminal Position: DUAL

Dual terminal position enhances ease of integration and reduces layout complexities.

Maximum Seated Height: 1.75 mm

A low seated height enables a compact design, ideal for high-density electronic applications.

Width: 3.9 mm

A narrow width allows for space-efficient designs, fitting into tighter spaces on PCBs.

Length: 4.9 mm

Shorter length contributes to a smaller footprint, beneficial for compact electronic devices.

Temperature Grade: AUTOMOTIVE

Automotive grade quality ensures reliability and robustness in vehicles and outdoor applications.

Maximum Negative Supply Voltage Limit: 0 V

Restricting negative voltage ensures safe operation in various configurations and is suitable for single-supply applications.

Nominal Unity Gain Bandwidth: 800 kHz

An 800 kHz bandwidth allows the Op Amp to handle a variety of signal frequencies effectively, enhancing application versatility.

Technology: BIPOLAR

Bipolar technology provides better performance in terms of speed and power consumption, making it a preferable choice for many applications.

Terminal Form: GULL WING

Gull wing terminals provide excellent mechanical strength and ease of soldering for surface-mounted applications.

Amplifier Type: OPERATIONAL AMPLIFIER

As an operational amplifier, it is well-suited for a wide range of analog applications including amplification, filtering, and mathematical operations.

Maximum Supply Current: 1 mA

A low maximum supply current ensures low power consumption, making it efficient for battery-operated devices.

Nominal Negative Supply Voltage (Vsup): 0 V

Zero voltage for the negative supply allows for easy application in single-supply configurations.

Architecture: VOLTAGE-FEEDBACK

Voltage-feedback architecture is ideal for high-gain and high-accuracy applications, enhancing overall performance.

Packing Method: TAPE AND REEL

Tape and reel packaging simplifies the handling and assembly process in automated environments.

Nominal Slow Rate: 0.4 V/us

A nominal slow rate of 0.4 V/us indicates good performance in applications requiring slower signal changes.

Terminal Pitch: 1.27 mm

A standard terminal pitch of 1.27 mm facilitates compatibility with various PCBs and makes assembly easier.

Technical Specifications

Operational Amplifiers (Op Amps) TS321AIDT attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from STMicroelectronics

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

±1.5/±15/3/30 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

800 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

85 dB

Input Offset Voltage Limit:

3000 uV

Minimum Voltage Gain:

25000

Nominal Slew Rate:

0.4 V/us

Peak Bias Current:

200 nA

Maximum Bias Current (IIB) @25 °C:

150 nA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

32 V

Maximum Negative Supply Voltage:

0 V

Minimum Negative Supply Voltage:

0 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Maximum Supply Current:

1 mA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

TS321AIDT Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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