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TS12A44514DRG4

Texas Instruments

TS12A44514DRG4 by Texas Instruments

TS12A44514DRG4 by Texas Instruments is a 4-function SPST switch with 40 ohm Ron, 175 ns switch-on time, and 94 dB isolation. Ideal for industrial applications requiring CMOS technology, it operates b/w -40 to 85 °C with a supply voltage range of 2-12 V.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,538 parts In-Stock

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Digiode

USA . 376 parts In-Stock

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376

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One Stop Electronics

USA . 178 parts In-Stock

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$2.500

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178

$2.500

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Ampacity Inc.

Singapore . 1,597 parts In-Stock

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$6.500

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Semicontronic

India . 1,267 parts In-Stock

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$6.500

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$6.338

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$6.305

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$6.500

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AZTECH Wire

Italy . 421 parts In-Stock

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$16.662

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Parana Technologies

USA . 1,454 parts In-Stock

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$20.319

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$20.332

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$20.319

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$20.332

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ChromeModa Solutions

Germany . 3,057 parts In-Stock

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$22.830

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$18.721

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3,057

$22.830

$18.721

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IDEA Electronic Components Group

UK . 1,797 parts In-Stock

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$22.830

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$21.688

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$20.547

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Corphita

USA . 949 parts In-Stock

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DigiPath Technology Company

USA . 763 parts In-Stock

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$20.584

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Corohmni

South Africa . 387 parts In-Stock

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Overview

Enhance your electronic designs with the TS12A44514DRG4 by Texas Instruments, a high-quality multiplexer and switch that offers unmatched performance and reliability. With Texas Instruments' reputation for excellence in manufacturing, you can trust that this product delivers outstanding results in a wide range of applications. Experience seamless switching capabilities, superior isolation, and efficient power management, all packed into a compact package that is easy to integrate. Elevate your projects with the TS12A44514DRG4 and unlock a world of possibilities in electronics design.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the product suitable for various applications.

Surface Mount: YES

Allows for easy and convenient installation on circuit boards.

No. of Functions: 4

Provides versatility and flexibility in signal routing options.

Nominal Supply Voltage (Vsup): 3 V

Matches the typical voltage requirements of many electronic devices.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures, ensuring reliability in harsh environments.

Technology: CMOS

Utilizes low power consumption and offers high noise immunity, making it energy-efficient and reliable.

Nominal Off-state Isolation: 94 dB

Provides excellent signal isolation to prevent interference between channels.

Technical Specifications

Multiplexers & Switches TS12A44514DRG4 attributes and parameters. Explore more Multiplexers & Switches devices from Texas Instruments

Specs

Other IC type:

Maximum Input Voltage:

12 V

Minimum Input Voltage:

0 V

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Length:

8.65 mm

Moisture Sensitivity Level (MSL):

1

Normal Position (V):

NO

No. of Channels:

1

No. of Functions:

4

No. of Terminals:

14

Nominal Off-state Isolation:

94 dB

Nominal On-state Resistance Match:

3.5 ohm

Maximum On-state Resistance (Ron):

40 ohm

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output (V):

SEPARATE OUTPUT

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/12

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

Multiplexer or Switches

Maximum Supply Current (Isup):

.001 mA

Maximum Supply Voltage (Vsup):

12 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage (Vsup):

3 V

Surface Mount:

YES

Maximum Switch-off Time:

120 ns

Maximum Switch-on Time:

175 ns

Switching (V):

BREAK-BEFORE-MAKE

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

3.9 mm

Trade Compliance

TS12A44514DRG4 Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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