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TPS65911AA2ZRCT

Texas Instruments

TPS65911AA2ZRCT by Texas Instruments

TPS65911AA2ZRCT by Texas Instruments is a Power Management IC with 12 channels and a max switching frequency of 3300 kHz. It operates in industrial temperature grade range from -40 to 85 °C, suitable for power supply management circuits. The IC has a package style of grid array, very thin profile, fine pitch, with a square shape and terminal finish of tin silver copper.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,512 parts In-Stock

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8,512

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Digiode

USA . 4,723 parts In-Stock

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4,723

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Distributors (Availability)

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One Stop Electronics

USA . 1,647 parts In-Stock

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$1.500

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1,647

$1.500

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Semicontronic

India . 1,128 parts In-Stock

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$2.500

100+ parts

$2.438

1k+ parts

$2.425

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1,128

$2.500

$2.438

$2.425

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Ampacity Inc.

Singapore . 511 parts In-Stock

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$6.500

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511

$6.500

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AZTECH Wire

Italy . 572 parts In-Stock

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$12.672

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572

$12.672

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Parana Technologies

USA . 2,277 parts In-Stock

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$14.865

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$15.296

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2,277

$14.865

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$15.296

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DigiPath Technology Company

USA . 864 parts In-Stock

1+ parts

$16.368

100+ parts

$15.059

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864

$16.368

$15.059

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ChromeModa Solutions

Germany . 2,258 parts In-Stock

1+ parts

$16.702

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$13.696

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2,258

$16.702

$13.696

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IDEA Electronic Components Group

UK . 2,132 parts In-Stock

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$16.702

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$15.867

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$15.032

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2,132

$16.702

$15.867

$15.032

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Corphita

USA . 1,495 parts In-Stock

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1,495

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Microchip USA

USA . 328 parts In-Stock

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328

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Corohmni

South Africa . 138 parts In-Stock

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Overview

Elevate your power management capabilities with the TPS65911AA2ZRCT by Texas Instruments. Crafted with precision and expertise, this Power Management IC offers unrivaled quality and reliability. Ideal for a wide range of applications, this product provides seamless integration and efficient performance. Experience the value of superior design and advanced technology with the TPS65911AA2ZRCT, delivering unmatched benefits and advantages to meet all your power management needs. Trust in Texas Instruments to deliver excellence every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good heat dissipation and electrical insulation, making the product durable and reliable.

Surface Mount: YES

Surface mount capability allows for easy installation and saves space on the PCB, making the product ideal for compact designs.

Nominal Supply Voltage (Vsup): 1.8 V

Operates at a low nominal supply voltage, making it energy-efficient and suitable for battery-powered applications.

Maximum Operating Temperature: 85 °C

High maximum operating temperature ensures reliable performance even in harsh environmental conditions.

Maximum Output Voltage: 3.3 V

Provides a stable maximum output voltage for powering various electronic components efficiently.

Temperature Grade: INDUSTRIAL

Industrial-grade temperature rating ensures the product can withstand extended operating temperatures in industrial settings.

Maximum Switching Frequency: 3300 kHz

High switching frequency enables fast response and efficient power management for smooth operation of the electronic system.

Technical Specifications

Power Management ICs TPS65911AA2ZRCT attributes and parameters. Explore more Power Management ICs devices from Texas Instruments

Specs

Adjustable Threshold:

YES

JESD-30 Code:

S-PBGA-B98

JESD-609 Code:

e1

Length:

9 mm

Moisture Sensitivity Level (MSL):

3

No. of Channels:

12

No. of Functions:

1

No. of Terminals:

98

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Voltage:

3.3 V

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1 mm

Maximum Supply Voltage (Vsup):

3.45 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage (Vsup):

1.8 V

Surface Mount:

YES

Maximum Switching Frequency:

3300 kHz

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.65 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

6 mm

Trade Compliance

TPS65911AA2ZRCT Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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