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TPS659116A2ZRCR

Texas Instruments

TPS659116A2ZRCR by Texas Instruments

TPS659116A2ZRCR by Texas Instruments is a Power Management IC with 98 terminals, operating at -40 to 85 °C. It has a supply voltage range of 2.7V to 5.5V and offers 13 channels with a max switching frequency of 3300 kHz. Ideal for power supply management circuits in various electronic applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,412 parts In-Stock

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Digiode

USA . 1,867 parts In-Stock

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Semicontronic

India . 299 parts In-Stock

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$1.500

100+ parts

$1.462

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$1.455

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299

$1.500

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$1.455

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One Stop Electronics

USA . 607 parts In-Stock

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$3.500

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Parana Technologies

USA . 52 parts In-Stock

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$11.665

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$12.058

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52

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ChromeModa Solutions

Germany . 1,964 parts In-Stock

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$13.107

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$10.748

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$10.748

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IDEA Electronic Components Group

UK . 452 parts In-Stock

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$13.107

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$12.452

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$11.796

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452

$13.107

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$11.796

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AZTECH Wire

Italy . 708 parts In-Stock

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$18.693

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Corphita

USA . 4,418 parts In-Stock

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DigiPath Technology Company

USA . 1,152 parts In-Stock

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$11.817

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Corohmni

South Africa . 359 parts In-Stock

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Microchip USA

USA . 301 parts In-Stock

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Overview

Enhance your power management solutions with the TPS659116A2ZRCR by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-quality Power Management ICs that are essential for a wide range of applications. With 13 channels and 13 outputs, this product offers unparalleled efficiency and reliability. Say goodbye to power interruptions and hello to seamless performance with the TPS659116A2ZRCR. Upgrade your systems today and experience the difference.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material is lightweight and durable, making the product suitable for various applications while ensuring long-term reliability.

Surface Mount: YES

Surface mount packaging allows for easy and efficient installation on PCBs, saving space and simplifying assembly processes.

Nominal Supply Voltage (Vsup): 3.8 V

The nominal supply voltage of 3.8V is within a common range for power management ICs, offering compatibility with a wide range of systems and devices.

No. of Terminals: 98

Having a high number of terminals enables the IC to interface with multiple components and circuits, enhancing its versatility and functionality.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85°C ensures the IC can withstand demanding environmental conditions and maintain reliable performance under heat stress.

Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)

Tin, silver, and copper terminal finish provides excellent conductivity and corrosion resistance, ensuring reliable electrical connections and long-term durability.

Width (mm): 6 mm

The compact width of 6mm allows for space-efficient PCB layout and integration, making the product suitable for compact electronic devices and systems.

Maximum Supply Voltage (Vsup): 5.5 V

With a maximum supply voltage of 5.5V, the IC can handle higher voltage inputs without risk of damage, providing robust protection for connected devices.

No. of Outputs: 13

Having 13 outputs allows the IC to control and distribute power to multiple components or subsystems, making it suitable for complex power management applications.

Adjustable Threshold: YES

The ability to adjust threshold voltage allows for fine-tuning and customization of power management settings, making the IC versatile and adaptable to diverse system requirements.

Technical Specifications

Power Management ICs TPS659116A2ZRCR attributes and parameters. Explore more Power Management ICs devices from Texas Instruments

Specs

Adjustable Threshold:

YES

JESD-30 Code:

R-PBGA-B98

JESD-609 Code:

e1

Length:

9 mm

Moisture Sensitivity Level (MSL):

3

No. of Channels:

13

No. of Functions:

1

No. of Outputs:

13

No. of Terminals:

98

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

BGA

Package Equivalence Code:

BGA98,8X13,25

Package Shape:

Package Style (Meter):

GRID ARRAY

Maximum Seated Height:

1 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage (Vsup):

3.8 V

Surface Mount:

YES

Maximum Switching Frequency:

3300 kHz

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

BALL

Terminal Pitch:

.65 mm

Terminal Position:

BOTTOM

Nominal Threshold Voltage (V):

+2.1V

Width (mm):

6 mm

Trade Compliance

TPS659116A2ZRCR Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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