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TPS6591102CA2ZRCR

Texas Instruments

TPS6591102CA2ZRCR by Texas Instruments

TPS6591102CA2ZRCR by Texas Instruments is a Power Management IC with 98 terminals, operating voltage range of 2.7V to 5.5V, and max switching frequency of 3300 kHz. It is used in power supply management circuits for various applications requiring precise voltage regulation and high channel count.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,080 parts In-Stock

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8,080

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Digiode

USA . 4,583 parts In-Stock

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4,583

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Distributors (Availability)

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Semicontronic

India . 954 parts In-Stock

1+ parts

$2.500

100+ parts

$2.438

1k+ parts

$2.425

10k+ parts

-

954

$2.500

$2.438

$2.425

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One Stop Electronics

USA . 192 parts In-Stock

1+ parts

$2.500

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192

$2.500

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Ampacity Inc.

Singapore . 852 parts In-Stock

1+ parts

$6.500

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852

$6.500

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AZTECH Wire

Italy . 859 parts In-Stock

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$17.160

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859

$17.160

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Corphita

USA . 2,857 parts In-Stock

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2,857

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Microchip USA

USA . 387 parts In-Stock

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387

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Corohmni

South Africa . 165 parts In-Stock

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165

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Overview

Enhance your power management solutions with the TPS6591102CA2ZRCR by Texas Instruments. Designed with top-quality materials and expert craftsmanship, this Power Management IC offers unparalleled performance and reliability. Ideal for a wide range of applications, this product provides customers with unmatched value, efficiency, and convenience. Trust Texas Instruments to deliver cutting-edge technology that meets all your power management needs. Experience the difference today with the TPS6591102CA2ZRCR.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material is lightweight and durable, making the product easy to handle and resistant to damage.

Surface Mount: YES

Surface mount technology allows for easy installation and space-saving on the PCB, making the product efficient and compact.

Nominal Supply Voltage (Vsup): 3.8 V

Optimal supply voltage ensures stable and efficient power management for the device.

No. of Terminals: 98

Higher number of terminals allow for more connections and functionalities, enhancing the versatility of the product.

Maximum Operating Temperature: 85 °C

High maximum operating temperature ensures reliability and performance in various environmental conditions.

Minimum Operating Temperature: -40 °C

Wide range of operating temperature ensures the product can function in extreme cold environments as well.

Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)

Tin/Silver/Copper finish provides excellent conductivity and corrosion resistance for long-lasting performance.

Width (mm): 6 mm

Compact width allows for efficient use of space on the PCB, suitable for small and tight layouts.

No. of Channels: 13

Multiple channels provide flexibility in power management and distribution, enabling better control over various outputs.

Terminal Pitch: 0.65 mm

Narrow terminal pitch allows for high-density mounting, optimizing space usage on the PCB.

Technical Specifications

Power Management ICs TPS6591102CA2ZRCR attributes and parameters. Explore more Power Management ICs devices from Texas Instruments

Specs

Adjustable Threshold:

YES

JESD-30 Code:

R-PBGA-B98

JESD-609 Code:

e1

Length:

9 mm

Moisture Sensitivity Level (MSL):

3

No. of Channels:

13

No. of Functions:

1

No. of Outputs:

13

No. of Terminals:

98

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

BGA

Package Equivalence Code:

BGA98,8X13,25

Package Shape:

Package Style (Meter):

GRID ARRAY

Maximum Seated Height:

1 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage (Vsup):

3.8 V

Surface Mount:

YES

Maximum Switching Frequency:

3300 kHz

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

BALL

Terminal Pitch:

.65 mm

Terminal Position:

BOTTOM

Nominal Threshold Voltage (V):

+2.1V

Width (mm):

6 mm

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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