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TPS3836L30DBVRG4

Texas Instruments

TPS3836L30DBVRG4 by Texas Instruments

TPS3836L30DBVRG4 by Texas Instruments is a Power Management IC with 1.8V nominal voltage, suitable for industrial applications. It features a small outline package style, dual terminal position, and CMOS technology. With a wide operating temperature range of -40 to 85°C, it is ideal for power supply support circuits in various electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,449 parts In-Stock

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8,449

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Semi Source

USA . 4,646 parts In-Stock

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4,646

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Digiode

USA . 2,662 parts In-Stock

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2,662

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Distributors (Availability)

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One Stop Electronics

USA . 940 parts In-Stock

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$0.500

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940

$0.500

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Parana Technologies

USA . 1,306 parts In-Stock

1+ parts

$7.817

100+ parts

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$8.369

10k+ parts

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1,306

$7.817

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$8.369

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DigiPath Technology Company

USA . 1,981 parts In-Stock

1+ parts

$8.607

100+ parts

$7.919

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1,981

$8.607

$7.919

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IDEA Electronic Components Group

UK . 1,098 parts In-Stock

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$8.783

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$8.344

1k+ parts

$7.905

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-

1,098

$8.783

$8.344

$7.905

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ChromeModa Solutions

Germany . 101 parts In-Stock

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$8.783

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$7.202

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101

$8.783

$7.202

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AZTECH Wire

Italy . 307 parts In-Stock

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$14.496

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307

$14.496

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Kepictronics

USA . 4,800 parts In-Stock

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4,800

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Corphita

USA . 3,754 parts In-Stock

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Microchip USA

USA . 1,794 parts In-Stock

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Overview

Elevate your power management solutions with the TPS3836L30DBVRG4 by Texas Instruments. Known for their superior quality and reliability, Texas Instruments delivers cutting-edge Power Management ICs that are second to none. This small outline, low profile, shrink pitch package offers customers a versatile solution for a wide range of applications. With a nominal supply voltage of 1.8V and industrial-grade temperature specifications, this power supply support circuit provides unmatched performance and efficiency. Trust Texas Instruments to deliver exceptional value and benefits with every product, including the TPS3836L30DBVRG4.

Feature Benefit Bullets

Package Body Material : PLASTIC/EPOXY

This material provides durability and protection for the components inside, ensuring a longer lifespan for the product.

Surface Mount : YES

Being surface mountable allows for easier and more efficient assembly onto circuit boards, saving time and labor costs.

Nominal Supply Voltage (Vsup) : 1.8 V

A suitable voltage level for various power management applications, providing stable power supply to connected devices.

Maximum Operating Temperature : 85 °C

With a high maximum operating temperature, this product can withstand harsh environmental conditions without compromising performance.

Width (mm) : 1.6 mm

Having a small width makes this product suitable for space-constrained applications where compact size is essential.

Technology : CMOS

CMOS technology allows for low power consumption, making the product energy-efficient and cost-effective in the long run.

Technical Specifications

Power Management ICs TPS3836L30DBVRG4 attributes and parameters. Explore more Power Management ICs devices from Texas Instruments

Specs

Additional Features:

RESET THRESHOLD VOLTAGE IS 2.64V

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e4

Length:

2.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

5

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

1.45 mm

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

1.6 V

Nominal Supply Voltage (Vsup):

1.8 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width (mm):

1.6 mm

Trade Compliance

TPS3836L30DBVRG4 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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