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TPS3125J18DBVRG4

Texas Instruments

TPS3125J18DBVRG4 by Texas Instruments

TPS3125J18DBVRG4 by Texas Instruments is a Power Management IC with 1.8V supply voltage, 5 terminals, and industrial temperature grade. It is used in power supply support circuits, operates b/w -40 to 85 °C, and has a small outline package style for surface mount applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Chip Stock

USA . 10,960 parts In-Stock

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Vyrian

USA . 6,244 parts In-Stock

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Digiode

USA . 2,803 parts In-Stock

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QIE Inc.

USA . 1,690 parts In-Stock

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One Stop Electronics

USA . 305 parts In-Stock

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$0.500

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305

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Parana Technologies

USA . 1,833 parts In-Stock

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$2.098

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$2.614

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IDEA Electronic Components Group

UK . 1,314 parts In-Stock

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$2.357

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$2.121

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ChromeModa Solutions

Germany . 517 parts In-Stock

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$2.357

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$1.933

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517

$2.357

$1.933

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AZTECH Wire

Italy . 411 parts In-Stock

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$10.898

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Corphita

USA . 3,631 parts In-Stock

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Microchip USA

USA . 2,938 parts In-Stock

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DigiPath Technology Company

USA . 2,001 parts In-Stock

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$2.125

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Overview

Experience the unparalleled quality and reliability of Texas Instruments with the TPS3125J18DBVRG4 Power Management IC. Designed for industrial applications, this small outline, low profile IC offers a nominal supply voltage of 1.8V and a wide operating temperature range from -40°C to 85°C. With its nickel/palladium/gold terminal finish and dual terminal position, this power supply support circuit provides exceptional performance and efficiency. Trust Texas Instruments for innovative solutions that exceed expectations in power management ICs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Lightweight and durable material for easy handling and long-lasting performance.

Surface Mount: YES

Easy to install and mount on circuit boards, saving time and effort.

Nominal Supply Voltage (Vsup): 1.8 V

Stable and efficient supply voltage for optimal performance of the power management IC.

No. of Terminals: 5

Simplified connections with a limited number of terminals, reducing complexity.

Maximum Operating Temperature: 85 °C

High operating temperature range ensures reliability and performance in various environments.

Minimum Operating Temperature: -40 °C

Wide range of operating temperatures allows for use in extreme conditions.

Width (mm): 1.6 mm

Compact size for easy integration into electronic devices with limited space.

Temperature Grade: INDUSTRIAL

Suitable for industrial applications with robust design and performance at high temperatures.

Technical Specifications

Power Management ICs TPS3125J18DBVRG4 attributes and parameters. Explore more Power Management ICs devices from Texas Instruments

Specs

Additional Features:

MANUAL RESET INPUT; POWER-ON RESET GENERATOR

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e4

Length:

2.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

5

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.45 mm

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.025 mA

Maximum Supply Voltage (Vsup):

3.3 V

Minimum Supply Voltage (Vsup):

.85 V

Nominal Supply Voltage (Vsup):

1.8 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Nominal Threshold Voltage (V):

+1.62V

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width (mm):

1.6 mm

Trade Compliance

TPS3125J18DBVRG4 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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