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TPD6E004RSERG4

Texas Instruments

TPD6E004RSERG4 by Texas Instruments

TPD6E004RSERG4 by Texas Instruments is a single transient suppression device with a breakdown voltage of 7V. It features a square package style, nickel palladium gold terminal finish, and operates b/w -40°C to 85°C. Ideal for applications requiring protection against transient voltage spikes as per IEC-61000-4-2 standard.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,584 parts In-Stock

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2,584

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Digiode

USA . 911 parts In-Stock

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911

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Nova Conductors

Japan . 58 parts In-Stock

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58

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 881 parts In-Stock

1+ parts

$0.077

100+ parts

-

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$1.445

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881

$0.077

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$1.445

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DigiPath Technology Company

USA . 1,595 parts In-Stock

1+ parts

$0.085

100+ parts

$0.078

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1,595

$0.085

$0.078

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ChromeModa Solutions

Germany . 4,817 parts In-Stock

1+ parts

$0.087

100+ parts

$0.071

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4,817

$0.087

$0.071

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IDEA Electronic Components Group

UK . 2,172 parts In-Stock

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$0.087

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$0.078

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2,172

$0.087

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$0.078

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One Stop Electronics

USA . 1,166 parts In-Stock

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$2.010

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1,166

$2.010

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Ampacity Inc.

Singapore . 603 parts In-Stock

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$3.010

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603

$3.010

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AZTECH Wire

Italy . 263 parts In-Stock

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$17.667

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263

$17.667

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Argo Parts USA

USA . 1,987 parts In-Stock

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Corphita

USA . 529 parts In-Stock

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529

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Continental Prestige Electronics

USA . 488 parts In-Stock

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488

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Bastille Electronics

Australia . 27 parts In-Stock

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Overview

Experience superior protection against transient voltage spikes with the TPD6E004RSERG4 by Texas Instruments. Designed with precision and expertise, this Transient Suppression Device offers reliability and efficiency like no other. Perfect for a wide range of applications, this product ensures the safety and longevity of your electronics. Trust in Texas Instruments to provide you with the quality and performance you need. Choose the TPD6E004RSERG4 for unmatched value and peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components.

Config: SINGLE

Simplified configuration for easier installation and maintenance.

Surface Mount: YES

Allows for easy integration onto circuit boards.

Nominal Breakdown Voltage: 7 V

Provides reliable protection against overvoltage conditions.

Package Shape: SQUARE

Optimal design for efficient placement on circuit boards.

No. of Terminals: 8

Sufficient terminals for proper connectivity and functionality.

Package Style (Meter): FLATPACK

Space-saving design suitable for various applications.

Maximum Operating Temperature: 85 °C

Ensures performance in a wide range of operating conditions.

Minimum Operating Temperature: -40 °C

Can withstand low-temperature environments without compromising functionality.

Terminal Finish: NICKEL PALLADIUM GOLD

Provides a reliable and corrosion-resistant terminal finish for long-term use.

Terminal Position: QUAD

Optimal terminal layout for efficient circuit board integration.

Minimum Breakdown Voltage: 6 V

Ensures protection against lower voltage spikes for enhanced reliability.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for soldering without damage.

Peak Reflow Temperature °C: 260

Suitable for high-temperature soldering processes without compromising integrity.

Maximum Breakdown Voltage: 8 V

Offers additional protection against higher voltage spikes for added safety.

Reference Standard: IEC-61000-4-2

Compliance with international standards for quality and performance assurance.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specific diode type designed for effective transient suppression.

Technology: AVALANCHE

Utilizes avalanche technology for efficient voltage suppression and protection.

Terminal Form: NO LEAD

Lead-free terminal form for compliance with environmental regulations.

Polarity: UNIDIRECTIONAL

Provides protection in one direction, suitable for specific applications.

Diode Element Material: SILICON

Silicon material for the diode element ensures reliability and performance.

Technical Specifications

Transient Suppression Devices TPD6E004RSERG4 attributes and parameters. Explore more Transient Suppression Devices devices from Texas Instruments

Specs

Maximum Breakdown Voltage:

8 V

Minimum Breakdown Voltage:

6 V

Nominal Breakdown Voltage:

7 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

S-PQFP-N8

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLATPACK

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Qualification:

Not Qualified

Reference Standard:

IEC-61000-4-2

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

TPD6E004RSERG4 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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