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TPD4E1B06DCKR

Texas Instruments

TPD4E1B06DCKR by Texas Instruments

TPD4E1B06DCKR by Texas Instruments is a transient suppression device with 4 common anode elements. It has a breakdown voltage of 8.25V, max clamping voltage of 10.9V, and operates in temperatures ranging from -40 to 125°C. Ideal for protecting electronic circuits against voltage transients in various applications.

Median Price

$0.958

Lifecycle Status

Suppliers In-Stock

19

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 760,417 parts In-Stock

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$0.373

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$0.254

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$0.130

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760,417

$0.373

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$0.130

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Chip1Stop

Japan . 1,752 parts In-Stock

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$0.958

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$0.958

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Mouser Electronics

USA . 13,522 parts In-Stock

1+ parts

$0.960

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$0.395

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$0.276

10k+ parts

$0.195

13,522

$0.960

$0.395

$0.276

$0.195

DigiKey

USA . 16,589 parts In-Stock

1+ parts

$1.060

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$0.430

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$0.300

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16,589

$1.060

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Arrow

USA . 21,000 parts In-Stock

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$0.151

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$0.151

Distributors (In-Stock)

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Nova Conductors

Japan . 10 parts In-Stock

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$0.272

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10

$0.272

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TME

Poland . 1,291 parts In-Stock

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$0.340

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$0.284

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$0.227

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$0.219

1,291

$0.340

$0.284

$0.227

$0.219

Digiode

USA . 2,438 parts In-Stock

1+ parts

$0.354

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2,438

$0.354

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Bristol Electronics

USA . 546 parts In-Stock

1+ parts

$0.525

100+ parts

$0.194

1k+ parts

$0.147

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546

$0.525

$0.194

$0.147

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Maritex

Poland . 5,984 parts In-Stock

1+ parts

$0.665

100+ parts

$0.361

1k+ parts

$0.265

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5,984

$0.665

$0.361

$0.265

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Vyrian

USA . 162,411 parts In-Stock

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Chip Stock

USA . 27,780 parts In-Stock

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HZD GmbH

Germany . 9,000 parts In-Stock

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9,000

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Sensible Micro Corp

USA . 5,615 parts In-Stock

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5,615

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Quantum Digital Technology

USA . 5,440 parts In-Stock

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5,440

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Connect4Technologies Inc.

Canada . 1,980 parts In-Stock

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ComSIT Distribution GmbH

Germany . 1,288 parts In-Stock

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J2 Sourcing AB

Sweden . 64 parts In-Stock

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Prism Electronics

USA . 47 parts In-Stock

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Distributors (Availability)

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Advanced Electronics

New Zealand . 150 parts In-Stock

1+ parts

$0.067

100+ parts

$0.064

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$0.064

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150

$0.067

$0.064

$0.064

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Semicontronic

India . 162,274 parts In-Stock

1+ parts

$0.145

100+ parts

$0.141

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$0.141

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162,274

$0.145

$0.141

$0.141

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Ampacity Inc.

Singapore . 162,253 parts In-Stock

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$0.145

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162,253

$0.145

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Parana Technologies

USA . 881 parts In-Stock

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$0.151

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$1.496

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881

$0.151

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$1.496

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Corohmni

South Africa . 276 parts In-Stock

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$0.165

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276

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DigiPath Technology Company

USA . 1,760 parts In-Stock

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$0.167

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$0.153

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1,760

$0.167

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IDEA Electronic Components Group

UK . 1,849 parts In-Stock

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$0.170

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$0.153

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1,849

$0.170

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ChromeModa Solutions

Germany . 1,506 parts In-Stock

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$0.170

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$0.139

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1,506

$0.170

$0.139

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Argo Parts USA

USA . 4,526 parts In-Stock

1+ parts

$0.272

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$0.264

4,526

$0.272

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$0.264

Continental Prestige Electronics

USA . 1,096 parts In-Stock

1+ parts

$0.272

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$0.267

1,096

$0.272

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Corphita

USA . 4,382 parts In-Stock

1+ parts

$0.336

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4,382

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Kepictronics

USA . 14,986 parts In-Stock

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Perfect Parts

USA . 14,054 parts In-Stock

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A-Z Elektronik GmbH

Germany . 13,246 parts In-Stock

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13,246

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Lixinc

USA . 2,389 parts In-Stock

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2,389

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Overview

Protect your electronic devices with the TPD4E1B06DCKR by Texas Instruments, a top-quality transient suppression device designed to safeguard against voltage spikes and surges. Manufactured by a trusted name in the industry, this common anode configuration with four elements offers reliable protection for a variety of applications. With its small outline package style and nickel palladium gold terminal finish, this device ensures optimal performance even in extreme temperatures. Trust Texas Instruments to provide the best-in-class technology for all your transient suppression needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the components inside the device, ensuring long-term reliability.

Nominal Breakdown Voltage: 8.25 V

This voltage level ensures effective transient suppression to protect sensitive electronic components from voltage spikes and surges.

Maximum Reverse Current: 0.0005 uA

The low reverse current helps in preventing any leakage and ensures efficient operation of the device even during normal conditions.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

This type of diode specifically designed for transient suppression applications, providing effective protection against voltage transients.

Technology: AVALANCHE

The avalanche technology allows for quick response to voltage spikes and surges, offering reliable protection against transient overvoltages.

Technical Specifications

Transient Suppression Devices TPD4E1B06DCKR attributes and parameters. Explore more Transient Suppression Devices devices from Texas Instruments

Specs

Maximum Breakdown Voltage:

9.5 V

Minimum Breakdown Voltage:

7 V

Nominal Breakdown Voltage:

8.25 V

Maximum Clamping Voltage:

10.9 V

Config:

COMMON ANODE, 4 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

4

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Reference Standard:

IEC-61000-4-2, 4-4, 4-5

Maximum Repetitive Peak Reverse Voltage:

5.5 V

Maximum Reverse Current:

.0005 uA

Reverse Test Voltage:

2.5 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

TPD4E1B06DCKR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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