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TPD4E001QDBVRQ1

Texas Instruments

TPD4E001QDBVRQ1 by Texas Instruments

TPD4E001QDBVRQ1 by Texas Instruments is a single avalanche diode with 11V breakdown voltage and 0.01uA reverse current. It is used for transient suppression in automotive applications, featuring a max clamping voltage of 25V and operating temperature range from -40°C to 125°C.

Median Price

$0.458

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

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Texas Instruments

USA . 391,637 parts In-Stock

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$0.339

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391,637

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Arrow

USA . 372 parts In-Stock

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$0.577

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$0.249

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$0.144

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372

$0.577

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$0.144

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Mouser Electronics

USA . 26,572 parts In-Stock

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$1.160

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$0.473

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26,572

$1.160

$0.473

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DigiKey

USA . 22,278 parts In-Stock

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$1.170

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$0.480

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$0.336

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$1.170

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Verical

USA . 372 parts In-Stock

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$0.249

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$0.144

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372

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Chip1Stop

Japan . 273 parts In-Stock

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$0.256

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Distributors (In-Stock)

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Nova Conductors

Japan . 57 parts In-Stock

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$0.213

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57

$0.213

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Maritex

Poland . 1 parts In-Stock

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$0.256

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$0.130

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$0.105

1

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$0.105

Digiode

USA . 2,369 parts In-Stock

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Vyrian

USA . 73,049 parts In-Stock

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Chip Stock

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Infinite Electronics LLP

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Kruse Electronics AG

Switzerland . 10,000 parts In-Stock

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Kruse

Germany . 10,000 parts In-Stock

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Cyclops Electronics Ltd

UK . 3,286 parts In-Stock

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ComSIT Distribution GmbH

Germany . 3,000 parts In-Stock

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Bristol Electronics

USA . 38 parts In-Stock

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Elcom Components

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Parana Technologies

USA . 1,582 parts In-Stock

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$0.047

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$1.428

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1,582

$0.047

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$1.428

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DigiPath Technology Company

USA . 257 parts In-Stock

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$0.052

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$0.048

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257

$0.052

$0.048

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ChromeModa Solutions

Germany . 5,118 parts In-Stock

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$0.053

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$0.043

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$0.053

$0.043

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IDEA Electronic Components Group

UK . 669 parts In-Stock

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$0.053

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$0.048

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669

$0.053

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Corohmni

South Africa . 180 parts In-Stock

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$0.093

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$0.093

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Advanced Electronics

New Zealand . 200 parts In-Stock

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$0.194

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$0.184

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200

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Continental Prestige Electronics

USA . 6,735 parts In-Stock

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$0.201

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Argo Parts USA

USA . 569 parts In-Stock

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569

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Aranea Global

USA . 1,000 parts In-Stock

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Ampacity Inc.

Singapore . 71,337 parts In-Stock

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Semicontronic

India . 68,098 parts In-Stock

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Corphita

USA . 3,382 parts In-Stock

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Kepictronics

USA . 44,398 parts In-Stock

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Authorized Procurement Solutions

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Perfect Parts

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GreenTree Electronics

Israel . 9,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,057 parts In-Stock

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Infinite Electronics LLP (Excess)

. 2,970 parts In-Stock

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Formix International (Excess)

India . 2,966 parts In-Stock

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Lixinc

USA . 562 parts In-Stock

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Speed Components Ltd (Excess)

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Overview

Protect your valuable electronic devices with the TPD4E001QDBVRQ1 by Texas Instruments. As a leader in transient suppression devices, Texas Instruments ensures top-notch quality and reliability. Ideal for applications where voltage spikes pose a threat, this product offers peace of mind with its exceptional performance and durability. Safeguard your equipment from potential damage and downtime with this innovative solution. Trust Texas Instruments to deliver the protection you need.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and reliability to the product, making it suitable for various applications.

Config: SINGLE

The single configuration makes installation and maintenance easy, simplifying the overall setup process.

Surface Mount: YES

The surface mount capability enables convenient and space-saving installation on electronic circuit boards.

Nominal Breakdown Voltage: 11 V

With a high nominal breakdown voltage, this device effectively protects against voltage spikes and surges.

Maximum Reverse Current: 0.01 uA

The low maximum reverse current ensures minimal power loss and efficient operation of the device.

Package Shape: RECTANGULAR

The rectangular package shape allows for a compact design, making it ideal for applications with limited space.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature ensures stable performance even in harsh environments.

Minimum Operating Temperature: -40 °C

With a low minimum operating temperature, this device can withstand extreme cold conditions.

Terminal Finish: NICKEL PALLADIUM GOLD

The terminal finish provides excellent conductivity and corrosion resistance, enhancing the overall durability of the product.

Terminal Position: DUAL

The dual terminal position allows for versatile installation options and compatibility with different systems.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum time at peak reflow temperature ensures efficient soldering processes and reliable connections.

Peak Reflow Temperature °C: 260

With a high peak reflow temperature, this device can withstand soldering processes without damage.

Reference Standard: AEC-Q101

Compliance with the AEC-Q101 standard ensures high quality and reliability for automotive applications.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

This diode type effectively suppresses voltage spikes and protects sensitive electronic components.

Technology: AVALANCHE

The avalanche technology ensures quick response and effective suppression of voltage surges.

Terminal Form: GULL WING

The gull wing terminal form allows for easy surface mounting and secure connections.

Maximum Repetitive Peak Reverse Voltage: 5.5 V

The maximum repetitive peak reverse voltage rating ensures reliable protection against voltage fluctuations.

Polarity: UNIDIRECTIONAL

The unidirectional polarity ensures that voltage spikes are diverted in a single direction, providing effective protection.

Maximum Clamping Voltage: 25 V

With a maximum clamping voltage of 25 V, this device effectively limits voltage spikes to protect connected equipment.

Diode Element Material: SILICON

The silicon diode element material offers high reliability and performance in transient suppression applications.

Technical Specifications

Transient Suppression Devices TPD4E001QDBVRQ1 attributes and parameters. Explore more Transient Suppression Devices devices from Texas Instruments

Specs

Nominal Breakdown Voltage:

11 V

Maximum Clamping Voltage:

25 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

5.5 V

Maximum Reverse Current:

.01 uA

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

TPD4E001QDBVRQ1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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