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TPD4E05U06DQA

Texas Instruments

TPD4E05U06DQA by Texas Instruments

TPD4E05U06DQA by Texas Instruments is a single avalanche diode with 6-8.5V breakdown voltage, ideal for transient suppression in electronics. With 35W peak power dissipation and IEC standards compliance, it offers protection against voltage spikes in a compact SMD package. Operating from -40 to 85°C, it suits various applications requiring reliable overvoltage protection.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 7,526 parts In-Stock

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Digiode

USA . 2,893 parts In-Stock

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Nova Conductors

Japan . 45 parts In-Stock

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Semicontronic

India . 1,281 parts In-Stock

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$0.010

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$0.010

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$0.010

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Parana Technologies

USA . 887 parts In-Stock

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$0.044

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$1.426

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DigiPath Technology Company

USA . 738 parts In-Stock

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$0.049

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$0.045

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ChromeModa Solutions

Germany . 1,151 parts In-Stock

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$0.050

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$0.041

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IDEA Electronic Components Group

UK . 1,044 parts In-Stock

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$0.045

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Corohmni

South Africa . 867 parts In-Stock

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One Stop Electronics

USA . 647 parts In-Stock

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$2.010

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Ampacity Inc.

Singapore . 703 parts In-Stock

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$3.010

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AZTECH Wire

Italy . 817 parts In-Stock

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Continental Prestige Electronics

USA . 6,610 parts In-Stock

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Lixinc

USA . 6,042 parts In-Stock

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Corphita

USA . 3,783 parts In-Stock

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Argo Parts USA

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A-Z Elektronik GmbH

Germany . 1,766 parts In-Stock

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Bastille Electronics

Australia . 300 parts In-Stock

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Overview

Enhance your electronic designs with the TPD4E05U06DQA from Texas Instruments, a leading manufacturer of high-quality transient suppression devices. This single-configured device, made of durable plastic/epoxy material, offers reliable protection against voltage spikes and surges. Ideal for a wide range of applications, this small-outline package with dual terminals ensures easy installation and operation. Trust in Texas Instruments to deliver superior technology and performance, giving you peace of mind knowing your circuits are safeguarded. Upgrade your projects with the TPD4E05U06DQA and experience unmatched quality and protection.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the device, ensuring longevity and reliability.

Maximum Non Repetitive Peak Reverse Power Dissipation: 35 W

Allows the device to handle high power levels without getting damaged, making it suitable for use in demanding applications.

Minimum Breakdown Voltage: 6 V

Offers protection against voltage spikes and surges by triggering the device to start conducting when the voltage exceeds this level.

Reference Standard: IEC-61000-4-2; IEC-61000-4-5

Compliance with international standards ensures that the device meets quality and safety requirements for various applications.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specifically designed for voltage suppression, providing efficient protection against transient voltage spikes.

Technical Specifications

Transient Suppression Devices TPD4E05U06DQA attributes and parameters. Explore more Transient Suppression Devices devices from Texas Instruments

Specs

Additional Features:

ULTRA LOW CAPACITANCE

Maximum Breakdown Voltage:

8.5 V

Minimum Breakdown Voltage:

6 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-N10

Maximum Non Repetitive Peak Reverse Power Dissipation:

35 W

No. of Elements:

1

No. of Terminals:

10

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

UNIDIRECTIONAL

Reference Standard:

IEC-61000-4-2; IEC-61000-4-5

Maximum Repetitive Peak Reverse Voltage:

5.5 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Trade Compliance

TPD4E05U06DQA Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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