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TPA0243DGQR

Texas Instruments

TPA0243DGQR by Texas Instruments

TPA0243DGQR by Texas Instruments is a 2-channel audio amplifier with 1% harmonic distortion, 2W output power, and 2.5dB gain. It operates b/w -40 to 85°C and requires a supply voltage of 2.5-5.5V, making it ideal for industrial audio applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,704 parts In-Stock

1+ parts

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6,704

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Digiode

USA . 2,481 parts In-Stock

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2,481

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Cyclops Electronics Ltd

UK . 1,040 parts In-Stock

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1,040

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LWI Electronics Inc

India . 5 parts In-Stock

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5

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Distributors (Availability)

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Parana Technologies

USA . 39 parts In-Stock

1+ parts

$2.419

100+ parts

-

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$2.916

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39

$2.419

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$2.916

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DigiPath Technology Company

USA . 246 parts In-Stock

1+ parts

$2.664

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246

$2.664

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ChromeModa Solutions

Germany . 419 parts In-Stock

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$2.718

100+ parts

$2.229

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419

$2.718

$2.229

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IDEA Electronic Components Group

UK . 16 parts In-Stock

1+ parts

$2.718

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$2.446

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16

$2.718

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$2.446

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AZTECH Wire

Italy . 228 parts In-Stock

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$8.304

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228

$8.304

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One Stop Electronics

USA . 1,550 parts In-Stock

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$8.800

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$8.800

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A-Z Elektronik GmbH

Germany . 5,309 parts In-Stock

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5,309

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Kepictronics

USA . 2,500 parts In-Stock

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2,500

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Microchip USA

USA . 286 parts In-Stock

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286

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Corphita

USA . 285 parts In-Stock

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285

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Overview

Enhance your audio experience with the TPA0243DGQR by Texas Instruments, a top-quality Audio Amplifier designed for pristine sound performance. Texas Instruments is renowned for its innovative technology and reliability in the electronics industry. This versatile amplifier is perfect for various applications, delivering clear and powerful audio with minimal distortion. With a compact design and high efficiency, the TPA0243DGQR provides exceptional value and benefits to customers seeking superior audio amplification. Elevate your audio projects with this exceptional product from Texas Instruments.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the amplifier lightweight and durable, making it ideal for portable audio devices.

Harmonic Distortion: 1%

Low harmonic distortion ensures high-quality sound output with minimal interference or distortion, providing an enhanced audio experience.

Nominal Output Power: 2 W

The amplifier has a decent output power of 2W, suitable for small to medium-sized speakers or headphones, ensuring sufficient audio volume.

Technology: CMOS

The CMOS technology used in the amplifier ensures efficient power consumption and low noise, improving overall performance and battery life in portable devices.

Nominal Bandwidth: 0.02 kHz

With a wide nominal bandwidth of 0.02 kHz, the amplifier can reproduce a wide range of audio frequencies accurately, delivering clear and detailed sound.

Technical Specifications

Audio & Video Amplifiers TPA0243DGQR attributes and parameters. Explore more Audio & Video Amplifiers devices from Texas Instruments

Specs

Nominal Bandwidth:

.02 kHz

General IC Type:

Gain:

2.5 dB

Harmonic Distortion:

1 %

JESD-30 Code:

S-PDSO-G10

JESD-609 Code:

e4

Length:

3 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

2

No. of Functions:

1

No. of Terminals:

10

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Nominal Output Power:

2 W

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP10,.19,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/5

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Sub-Category:

Audio/Video Amplifiers

Maximum Supply Current:

14 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3 mm

Trade Compliance

TPA0243DGQR General Purpose ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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