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TM4C123GH6ZRBTR

Texas Instruments

TM4C123GH6ZRBTR by Texas Instruments

TM4C123GH6ZRBTR by Texas Instruments is a 32-bit microcontroller with Cortex-M4F CPU family, offering 24-Ch 12-Bit ADC channels and 16 PWM channels. It features 32768 bytes of RAM, flash ROM programmability, and connectivity options like CAN, I2C, SPI, UART. Ideal for industrial applications requiring high-speed processing and extensive peripheral support.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 4,932 parts In-Stock

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Vyrian

USA . 4,532 parts In-Stock

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Distributors (Availability)

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AZTECH Wire

Italy . 853 parts In-Stock

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$12.464

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853

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One Stop Electronics

USA . 510 parts In-Stock

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$26.000

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510

$26.000

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Parana Technologies

USA . 2,111 parts In-Stock

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$65.814

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DigiPath Technology Company

USA . 1,736 parts In-Stock

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$72.469

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$66.672

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1,736

$72.469

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ChromeModa Solutions

Germany . 2,055 parts In-Stock

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$73.948

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$60.637

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$73.948

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IDEA Electronic Components Group

UK . 62 parts In-Stock

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$73.948

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$70.251

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$66.553

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62

$73.948

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$66.553

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Component Stockers USA

USA . 493 parts In-Stock

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$99.990

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Corphita

USA . 4,314 parts In-Stock

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Microchip USA

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Overview

Elevate your projects to the next level with the TM4C123GH6ZRBTR microcontroller by Texas Instruments. Known for their top-notch quality and reliability, Texas Instruments delivers cutting-edge technology that is perfect for a wide range of applications. This microcontroller offers unmatched value, providing customers with superior performance, efficiency, and versatility. Whether you're working on robotics, automation, or IoT devices, the TM4C123GH6ZRBTR is the ultimate solution to bring your ideas to life. Upgrade to Texas Instruments today and experience innovation like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the microcontroller, ensuring a longer lifespan.

Bit Size: 32

High bit size allows for more complex calculations and processing capabilities.

Maximum Operating Temperature: 105 °C

Can withstand high temperature environments, suitable for industrial applications.

ADC Channels: YES

Ability to convert analog signals to digital, important for interfacing with sensors and other analog devices.

DMA Channels: YES

Direct Memory Access channels help improve data transfer speeds and efficiency.

ROM Words: 262144

Large ROM size allows for storing a significant amount of program data.

Peripheral IC Type: MICROCONTROLLER, RISC

RISC architecture provides efficient processing and performance for various applications.

RAM Bytes: 32768

Sufficient RAM for temporary data storage and multitasking capabilities.

Connectivity: CAN(2), I2C(6), IRDA, MICROWIRE, SPI, SSI(4), UART(8), USB

Support for multiple communication protocols enables versatile connectivity options.

Speed: 80 rpm

Capable of processing data at a fast speed, suitable for real-time applications.

Technical Specifications

Microcontrollers TM4C123GH6ZRBTR attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

CPU Family:

CORTEX-M4F

Maximum Clock Frequency:

25 MHz

DAC Channels:

NO

DMA Channels:

YES

External Data Bus Width:

0

JESD-30 Code:

S-PBGA-B157

JESD-609 Code:

e1

Length:

9 mm

Moisture Sensitivity Level (MSL):

3

No. of I/O Lines:

120

No. of Terminals:

157

On Chip Program ROM Width:

8

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA157,13X13,25

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.2,3.3

Qualification:

Not Qualified

RAM Bytes:

32768

ROM Words:

262144

ROM Programmability:

FLASH

Maximum Seated Height:

1 mm

Speed:

80 rpm

Sub-Category:

Microcontrollers

Maximum Supply Voltage:

1.32 V

Minimum Supply Voltage:

1.08 V

Nominal Supply Voltage:

1.2 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

9 mm

Peripheral IC Type:

Data EEPROM Size:

2K

Connectivity:

CAN(2), I2C(6), IRDA, MICROWIRE, SPI, SSI(4), UART(8), USB

Peripherals:

BOD, COMPARATOR(3), DMA(32), POR, PWM(16), QEI(2), RTC, TIMER(13), WDT(2)

Analog To Digital Convertors:

24-Ch 12-Bit

Trade Compliance

TM4C123GH6ZRBTR Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.2

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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