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TLV2775AIPWRG4

Texas Instruments

TLV2775AIPWRG4 by Texas Instruments

TLV2775AIPWRG4 by Texas Instruments is a CMOS Operational Amplifier with 2200uV Max Input Offset Voltage, 82dB Nominal CMRR, and 4800kHz Unity Gain Bandwidth. Ideal for automotive applications due to its low bias current, VFB architecture, and wide temperature range of -40 to 125 °C.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 4,163 parts In-Stock

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Digiode

USA . 839 parts In-Stock

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One Stop Electronics

USA . 1,371 parts In-Stock

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$0.410

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Parana Technologies

USA . 1,735 parts In-Stock

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$5.694

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$6.486

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DigiPath Technology Company

USA . 958 parts In-Stock

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$6.270

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ChromeModa Solutions

Germany . 1,566 parts In-Stock

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$6.398

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$5.246

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IDEA Electronic Components Group

UK . 1,344 parts In-Stock

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$5.758

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AZTECH Wire

Italy . 592 parts In-Stock

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$16.643

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Microchip USA

USA . 4,933 parts In-Stock

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Corphita

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Overview

Enhance your electronic designs with the TLV2775AIPWRG4 by Texas Instruments, a top-tier manufacturer of operational amplifiers. Perfect for a wide range of applications, this product offers exceptional quality and performance. With its low bias current, high common mode rejection ratio, and compact design, the TLV2775AIPWRG4 delivers superior functionality and reliability. Trust in Texas Instruments to provide cutting-edge technology that meets your needs and exceeds your expectations. Choose the TLV2775AIPWRG4 for outstanding value and unmatched advantages in your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good durability and protection for the internal components of the operational amplifier.

Maximum Input Offset Voltage: 2200 uV

Low input offset voltage ensures accurate amplification of input signals without significant distortion.

Maximum Average Bias Current (IIB): 0.00035 uA

Low bias current helps in minimizing power consumption and maintaining signal integrity.

Surface Mount: YES

Surface mount capability allows for easy integration onto circuit boards, saving space and simplifying assembly.

Nominal Common Mode Reject Ratio: 82 dB

High common mode rejection ratio helps in rejecting unwanted noise and interference from the input signal.

Nominal Supply Voltage / Vsup (V): 2.7

Low supply voltage requirement makes it suitable for low power applications and battery-operated devices.

Minimum Slew Rate: 4.7 V/us

Fast slew rate ensures rapid response to input signal changes, making it suitable for dynamic signal amplification.

Maximum Supply Voltage Limit: 7 V

The high supply voltage limit provides flexibility in the operating range of the operational amplifier.

Minimum Voltage Gain: 13000

High voltage gain allows for amplification of weak signals with minimal distortion.

Low-Bias: YES

Low bias current helps in maintaining signal accuracy and minimizing power consumption.

Nominal Unity Gain Bandwidth: 4800 kHz

High unity gain bandwidth ensures consistent performance across a wide range of frequencies.

Technology: CMOS

CMOS technology offers low power consumption and high input impedance for improved performance.

Maximum Supply Current: 8 mA

Low supply current requirement helps in reducing power consumption and heat dissipation.

Technical Specifications

Operational Amplifiers (Op Amps) TLV2775AIPWRG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

2.7/5 V

Total Functions:

4

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

4.8 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

82 dB

Input Offset Voltage Limit:

2200 uV

Minimum Voltage Gain:

13000

Minimum Slew Rate:

4.7 V/us

Nominal Slew Rate:

6 V/us

Peak Bias Current:

350 pA

Maximum Bias Current (IIB) @25 °C:

60 pA

Operational Characteristics

Nominal Supply Voltage:

2.7 V

Maximum Supply Voltage:

7 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Maximum Supply Current:

8 mA

Physical Characteristics

Length:

0.197 in (5 mm)

Width:

0.173 in (4.4 mm)

Maximum Seated Height:

0.047 in (1.2 mm)

Total Terminals:

16

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G16

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP16,.25

Trade Compliance

TLV2775AIPWRG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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