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TLV2774IDG4

Texas Instruments

TLV2774IDG4 by Texas Instruments

TLV2774IDG4 by Texas Instruments is a CMOS Operational Amplifier with 2900uV Max Input Offset Voltage, 82dB Nominal CMRR, and 4800kHz Unity Gain Bandwidth. Ideal for automotive applications due to low bias current and VFB architecture.

Median Price

-

Lifecycle Status

EOL

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,224 parts In-Stock

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Digiode

USA . 458 parts In-Stock

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458

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Distributors (Availability)

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Parana Technologies

USA . 398 parts In-Stock

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$4.727

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$5.221

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398

$4.727

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DigiPath Technology Company

USA . 83 parts In-Stock

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$5.205

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$4.788

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83

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$4.788

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ChromeModa Solutions

Germany . 2,514 parts In-Stock

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$5.311

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$4.355

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$4.355

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IDEA Electronic Components Group

UK . 122 parts In-Stock

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$5.311

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$4.780

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122

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One Stop Electronics

USA . 953 parts In-Stock

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$8.410

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$8.410

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AZTECH Wire

Italy . 661 parts In-Stock

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$13.121

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QUARKTWIN TECHNOLOGY LTD

USA . 12,222 parts In-Stock

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Microchip USA

USA . 3,903 parts In-Stock

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Corphita

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Overview

Experience superior performance with the TLV2774IDG4 operational amplifiers from Texas Instruments. Designed with precision and reliability in mind, these Op Amps offer unmatched quality for a wide range of applications. Whether you're working on automotive projects or industrial automation, this product provides exceptional value with its low-bias, high voltage gain, and frequency compensation features. Trust Texas Instruments to deliver cutting-edge technology that meets your needs and exceeds your expectations. Elevate your designs with the TLV2774IDG4 and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the operational amplifier, ensuring long-term reliability.

Maximum Input Offset Voltage: 2900 uV

The low input offset voltage helps in minimizing errors in voltage measurements, making this operational amplifier suitable for precision applications.

Nominal Supply Voltage / Vsup (V): 2.7

The low nominal supply voltage makes this operational amplifier energy-efficient and suitable for low-power applications.

Minimum Slew Rate: 4.7 V/us

The high slew rate allows the operational amplifier to quickly respond to changes in input signals, making it suitable for high-frequency applications.

Maximum Supply Voltage Limit: 7 V

The wide supply voltage range allows for flexibility in the power supply options for the operational amplifier.

Technology: CMOS

The CMOS technology offers low power consumption, high input impedance, and rail-to-rail output swing, making this operational amplifier suitable for low-power and precision applications.

Amplifier Type: OPERATIONAL AMPLIFIER

Being specifically designed as an operational amplifier, this product offers high gain, high input impedance, and low output impedance, making it ideal for amplification and signal processing applications.

Technical Specifications

Operational Amplifiers (Op Amps) TLV2774IDG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

2.7/5 V

Total Functions:

4

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

4.8 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

82 dB

Minimum Common Mode Rejection Ratio (CMRR ):

60 dB

Input Offset Voltage Limit:

2900 uV

Minimum Voltage Gain:

13000

Minimum Slew Rate:

4.7 V/us

Nominal Slew Rate:

6 V/us

Maximum Input Offset Current (IIO):

60 pA

Peak Bias Current:

350 pA

Maximum Bias Current (IIB) @25 °C:

60 pA

Operational Characteristics

Nominal Supply Voltage:

2.7 V

Maximum Supply Voltage:

7 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Maximum Supply Current:

8 mA

Physical Characteristics

Length:

0.341 in (8.65 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

14

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel/Palladium/Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tube

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP14,.25

Trade Compliance

TLV2774IDG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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